SL9100

Abstract: bubble memory plessey MV1812 MV1830 75H-0
Contextual Info: PLESS EY SEMICONDUCTORS jgE D • 7220513 000=1431 t> ■ PLESSEY " Semiconductors , T - '7 ~ H > '7 - 0 £ MV1830 TELETEXT DATA BUFFER The MV1830 is a 64 x 9 sequential data buffer designed to be used w ith the MV1812 Teletext Data A cquisition Circuit.

Contextual Info: {01 F L E S S E Y W S e m ic o n d u c to rs. MV1830 TELETEXT DATA BUFFER The MV1830 is a 64 x 9 sequential data buffer designed to be used w ith the MV1812 Teletext Data Acquisition Circuit. The MV1830 can be used singly, o r can be cascaded so that the data from m ultiple VBI lines may be stored, allowing time

SL9100

Abstract: sp30p
Contextual Info: PLESSEY 12Z D S E M I C O N DU C TO RS • 7220513 000=1431 t> ■ PLESSEY Semiconductors , T - '7 ~ H > '7 - 0 £ MV1830 TELETEXT DATA BUFFER The MV1830 is a 64 x 9 sequential data buffer designed to be used w ith the MV1812 Teletext Data A cquisition Circuit.

l9100

Abstract: sdc 7500 SL9100 Plessey st L9100
Contextual Info: MV1812 TELETEXT DATA ACQUISITION The M V 1812 is a h ig h speed CMOS c irc u it capable o f d e c o d in g an y W o rld System 625 lin e te le te x t transm issions. The c ir c u it o p e ra te s o n s e ria l t e le t e x t d a ta p ro v id e d by th e Plessey SL9100 D ata S lice r and

Selco

Contextual Info: P L E S S E Y SEMICONDUCTORS 1SE PLESSEY S em ico n d u cto rs D WÊ 722GS13 000T407 i =1 • n. T - 7 7 - 0 7 - 0 ^ M V 1 8 1 2 The M V1812 is a high speed CMOS circuit capable o f decoding any W orld System 625 line te le te x t transm issions. The c irc u it o p e ra te s on se ria l te le te x t d ata