Untitled
Abstract: No abstract text available
Text: SD-101 VR 400 30 1100 *4 *5 *① 光he contents of this data sheet are subject to change without advance notice for the purpose of improvement. When using this product, would you please refer to the latest specifications. SD-101 / P D / 光a / mW IL Light current
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SD-101
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NKG103P
Abstract: NKR101 NAG103P NAR101 NKR103 NKA101 NKG101P NAA101 NAA103 NAG101P
Text: • SUPER BRIGHT LED NUMERIC DISPLAY 101 / 103 Series Square Shape Type 25mm ■ Absolute Maximum Ratings Ta = 25°C Red Green Orange NAR / NKR NAG / NKG NAA / NKA Unit Power Dissipation Pb 120 126 126 mW Forward Current IF 30 25 25 mA Peak Forward Current
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10KHZ
100HZ
NKG103P
NKR101
NAG103P
NAR101
NKR103
NKA101
NKG101P
NAA101
NAA103
NAG101P
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AES17-1991
Abstract: CDB4341A CS4341 CS4341A CS4341A-KS
Text: CS4341A 24-Bit, 192 kHz Stereo DAC with Volume Control Features Description 101 dB Dynamic Range -91 dB THD+N +3.3 V or +5 V Power Supply 50 mW with 3. 3V supply Low Clock Jitter Sensitivity Filtered Line Level Outputs On-Chip Digital De-emphasis for 32, 44.1,
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CS4341A
24-Bit,
CS4341A
CDB4341A
DS582PP1
MS-012
AES17-1991
CS4341
CS4341A-KS
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NSG103P
Abstract: No abstract text available
Text: • SUPER BRIGHT LED NUMERIC DISPLAY NS 101 / NS 103 Series Square Shape Type 15mm ■ Absolute Maximum Ratings Ta = 25°C Red Green Orange NSR NSG NSA Unit Power Dissipation Pb 120 126 126 mW Forward Current IF 30 25 25 mA Peak Forward Current IFM 120 100
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10KHZ
100HZ
NSG103P
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Untitled
Abstract: No abstract text available
Text: CS4341A 24-Bit, 192 kHz Stereo DAC with Volume Control Features Description 101 dB Dynamic Range -91 dB THD+N +3.3 V or +5 V Power Supply 50 mW with 3.3 V supply Low Clock Jitter Sensitivity Filtered Line Level Outputs On-Chip Digital De-emphasis for 32, 44.1,
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CS4341A
24-Bit,
CS4341A
DS582PP2
MS-012
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AES17-1991
Abstract: CDB4340A CS4340 CS4340A CS4340A-KS
Text: CS4340A 24-Bit, 192 kHz Stereo DAC for Audio Features Description 101 dB Dynamic Range -91 dB THD+N +3.3 V or +5 V Power Supply 50 mW with 3.3 V supply Low Clock Jitter Sensitivity Filtered Line Level Outputs On-Chip Digital De-emphasis for 44.1kHz Popguard Technology for Control of Clicks
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CS4340A
24-Bit,
CS4340
CS4340A
mechanDB4340A
DS590PP2
MS-012
AES17-1991
CDB4340A
CS4340
CS4340A-KS
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CDB4340
Abstract: CS4340 CS4340-BS CS4340-CZ CS4340-CZZ CS4340-DS CS4340-KS CS4340-KSZ DS297
Text: CS4340 24-Bit, 96 kHz Stereo D/A Converter for Audio Features z 101 dB Dynamic Range z -91 dB THD+N z +3.0 V or +5.0 V Power Supply z Low Clock Jitter Sensitivity z Filtered Line-level Outputs z On-chip Digital De-emphasis for 32, 44.1 and 48 kHz z 33 mW with 3V Supply
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CS4340
24-Bit,
CS4340
DS297F2
CDB4340
CS4340-BS
CS4340-CZ
CS4340-CZZ
CS4340-DS
CS4340-KS
CS4340-KSZ
DS297
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High-Frequency Modulation IC for Laser Diode
Abstract: TC9386FU
Text: 5. Technical Datasheets 5–3 TOLD2003SDA Features • Two-wavelength laser diode • Use of a monolithic chip realizes high-precision lasing point spacing. • Has succeeded in 85˚C operation for the first time as a two-wavelength laser diode. Suitable for use in DVD car
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OLD2003SDA
Reve50
TC9386FU)
TC9386FU
High-Frequency Modulation IC for Laser Diode
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ADJD-E622-QR999
Abstract: AEC-Q100 GS101 HDJD-J822 IPC-SM-782 QFN-16 ADJD-E622
Text: ADJD-E622-QR999 RGB Color Sensor in QFN Package Data Sheet Description Features ADJD-E622-QR999 is a high performance, small in size, cost effective light to voltage converting sensor. The sensor combines a photodiode array and three transimpedance amplifiers in a single monolithic CMOS IC
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ADJD-E622-QR999
ADJD-E622-QR999
QFN-16
AEC-Q100
AV01-0143EN
GS101
HDJD-J822
IPC-SM-782
QFN-16
ADJD-E622
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F-053
Abstract: PG-SOT-363 BSD235C L6327
Text: BSD235C OptiMOS 2 + OptiMOS™-P 2 Small Signal Transistor Product Summary Features P N -20 20 V VGS=±4.5 V 1200 350 mW VGS=±2.5 V 2100 600 -0.53 0.95 • Complementary P + N channel · Enhancement mode VDS · Super Logic level 2.5V rated RDS(on),max
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BSD235C
IEC61249-2-21
PG-SOT-363
L6327:
F-053
PG-SOT-363
BSD235C L6327
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TSHA550
Abstract: TSHA5500 TSHA5501 TSHA5502 TSHA5503
Text: TSHA550. GaAlAs Infrared Emitting Diode in ø 5 mm T–1¾ Package Description The TSHA550. series are high-efficiency infrared emitting diodes in GaAlAs on GaAlAs techno- logy, molded in a clear, untinted plastic package. In comparison with the standard GaAs
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TSHA550.
TSHA550
TSHA5500
TSHA5501
TSHA5502
TSHA5503
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TSTS7301
Abstract: TSTS7302 TSTS7300 TSTS7303
Text: TSTS 730. TELEFUNKEN Semiconductors GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case Description The TSTS 730. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO–18 package. Their glass lenses provide a high radiant intensity without external optics.
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D-74025
TSTS7301
TSTS7302
TSTS7300
TSTS7303
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Untitled
Abstract: No abstract text available
Text: DF N2 020 -6 PBSS4160PANP 60 V, 1 A NPN/PNP low VCEsat BISS transistor 14 January 2013 Product data sheet 1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
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PBSS4160PANP
DFN2020-6
OT1118)
PBSS4160PAN.
PBSS5160PAP.
AEC-Q101
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TSTS 7102
Abstract: tsts 7103 TSTS7101 TSTS7100 TSTS7102 TSTS7103
Text: TSTS 710. TELEFUNKEN Semiconductors GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case Description TSTS 710. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO–18 package. Their glass lenses provide a very high radiant intensity without external
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D-74025
TSTS 7102
tsts 7103
TSTS7101
TSTS7100
TSTS7102
TSTS7103
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Untitled
Abstract: No abstract text available
Text: DF N2 020 -6 PBSS4130PAN 30 V, 1 A NPN/NPN low VCEsat BISS transistor 11 January 2013 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
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PBSS4130PAN
DFN2020-6
OT1118)
PBSS4130PANP.
PBSS5130PAP.
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: DF N2 020 -6 PBSS5230PAP 30 V, 2 A PNP/PNP low VCEsat BISS transistor 11 January 2013 Product data sheet 1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
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PBSS5230PAP
DFN2020-6
OT1118)
PBSS4230PANP.
PBSS4230PAN.
AEC-Q101
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TSTA7100
Abstract: No abstract text available
Text: TSTA 7100 TELEFUNKEN Semiconductors GaAlAs IR Emitting Diode in Hermetically Sealed TO18 Case Description TSTA 7100 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO 18 package. Its glass lens provides a very high radiant intensity without
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D-74025
TSTA7100
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SI 7300
Abstract: 02-TP
Text: TSTA 7300 TELEFUNKEN Semiconductors GaAlAs IR Emitting Diode in Hermetically Sealed TO18 Case Description TSTA 7300 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO–18 package. Its glass lens provides a high radiant intensity without external
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D-74025
SI 7300
02-TP
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Untitled
Abstract: No abstract text available
Text: TSTS730. Vishay Telefunken GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case Description The TSTS730. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO–18 package. Their glass lenses provide a high radiant intensity without external optics.
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TSTS730.
D-74025
20-May-99
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TSTS 7102
Abstract: TSTS710 TSTS7101 TSTS7100 TSTS7102 TSTS7103
Text: TSTS710. Vishay Telefunken GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case Description TSTS710. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO–18 package. Their glass lenses provide a very high radiant intensity without external optics.
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TSTS710.
D-74025
20-May-99
TSTS 7102
TSTS710
TSTS7101
TSTS7100
TSTS7102
TSTS7103
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DE1a-5V
Abstract: DE2a-12V DE1a1b-L-5V DE1a1b-L2-6V VDE0631 DE1a-L2-3V DE1a-12V DE1a1b-24V DE1a1b-5V DE1a1b-L-24V
Text: DE VDE COMPACT HIGH-INSULATION POLARIZED POWER RELAY DE RELAYS FEATURES 25.0 .984 • Conforms to VDE0631. Insulating distance between coil and contacts: Clearance Min. 8mm .315 inch Creepage distance Min. 8mm .315 inch 12.5 .492 12.5 .492 • Extensive product line-up.
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VDE0631.
DE1a-5V
DE2a-12V
DE1a1b-L-5V
DE1a1b-L2-6V
VDE0631
DE1a-L2-3V
DE1a-12V
DE1a1b-24V
DE1a1b-5V
DE1a1b-L-24V
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Untitled
Abstract: No abstract text available
Text: TSTS710. Vishay Telefunken GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case Description TSTS710. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO–18 package. Their glass lenses provide a very high radiant intensity without external optics.
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TSTS710.
D-74025
20-May-99
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BFW45
Abstract: BFR59 BFS89 BFS90 BFS91 BFT47 BFT48 BFT49 BFT57 BFT58
Text: High Voltage Transistors TYPE NO. 101 POLA RITY CASE MAXIMUM RATINGS VCEO IC Pd ICM* VCER* mA (mW) (V) VCE(sat) HFE min max IC (mA) VCE (V) m ai (V) IC (mA) fr min (MHz) Cob Cre* max (MHz) BFR59 BFS89 BFS90 BFS91 BFT47 N N P P N TO-39 TO-39 TO-39 TO-39
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BFR59
BFS89
BFS90
BFS91
BFT47
5000G
BFT48
BFT49
BFW45
BFT57
BFT58
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LM2903
Abstract: HA17903 Signetics TTL UA2903 M51923 NJM2903
Text: - 101 LM2903 w æ t m ï ï t s l 7*JI, N * * ig , 2 n m ib ftn iA m ? ^ r • => v - * T - , f¥ m ® W Œ * ïB a '» i£ t ' . I t i # l i T T L , CM OS f n g * » ÿ ? * UllfS £ ¡ S S f f i ® T - £ 5 . 2 V ~ 36V ( # * « 0 ± 1 V —± 1 8 V ( 2 MW,)
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LM2903
36V4fcllÂ
300t-10sec
570mW
250mV
UA2903
HA17903
LM2903
HA17903
Signetics TTL
UA2903
M51923
NJM2903
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