MAZ8068-H
Abstract: MAZ3000 MAZ8000 MAZ8024 MAZ8027 MAZ8027-H MAZ8027-L MAZ8030 MAZ8030-H MAZ8030-L
Text: Zener Diodes MAZ8000 Series Silicon planar type Unit : mm For stabilization of power supply A • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Repetitive peak forward current IFRM 200 mA Total power dissipation* Ptot 150 mW Junction temperature
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MAZ8000
MAZ3000
MAZ8068
MAZ8075
MAZ8039
MAZ8068-H
MAZ8024
MAZ8027
MAZ8027-H
MAZ8027-L
MAZ8030
MAZ8030-H
MAZ8030-L
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ACAS 0606 AT
Abstract: No abstract text available
Text: ACAS 0606 AT, ACAS 0612 AT - Precision Vishay Beyschlag Precision Thin Film Chip Resistor Array Superior Moisture Resistivity FEATURES • Superior moisture resistivity, |ΔR/R| < 0.5 % 85 °C; 85 % RH; 1000 h • Rated dissipation P70 up to 125 mW per resistor
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AEC-Q200
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
ACAS 0606 AT
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ACAS 0606 AT
Abstract: No abstract text available
Text: ACAS 0606 AT, ACAS 0612 AT - Precision Vishay Beyschlag Precision Thin Film Chip Resistor Array Superior Moisture Resistivity FEATURES • Superior moisture resistivity, |ΔR/R| < 0.5 % 85 °C; 85 % RH; 1000 h • Rated dissipation P70 up to 125 mW per resistor
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AEC-Q200
18-Jul-08
ACAS 0606 AT
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110R
Abstract: 220R ACAS 0606 AT
Text: ACAS 0606 AT, ACAS 0612 AT - Precision Vishay Beyschlag Precision Thin Film Chip Resistor Array Superior Moisture Resistivity FEATURES • Superior moisture resistivity, |ΔR/R| < 0.5 % 85 °C; 85 % RH; 1000 h • Rated dissipation P70 up to 125 mW per resistor
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AEC-Q200
11-Mar-11
110R
220R
ACAS 0606 AT
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dsp16a block diagram
Abstract: DSP16A PDA30 DSP1616 T9682 t86a WE DSP16A DB10 AT&T DSP1610
Text: Data Sheet September 1995 RT DSP1616-x11 Digital Signal Processor 1 Features Optimized for digital cellular applications with a bit manipulation unit for higher signal coding efficiency 38 ns and 33 ns instruction cycle Low power consumption: <15.0 mW/MIPS typical at 5 V
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DSP1616-x11
DSP1616-x10;
16-bit
36-bit
DS94-189WDSP
DS93-110DSP)
dsp16a block diagram
DSP16A
PDA30
DSP1616
T9682
t86a
WE DSP16A
DB10
AT&T DSP1610
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MC ATAU - Precision
Abstract: ACAS 0606 AT
Text: ACAS 0606 ATAU - Precision www.vishay.com Vishay Beyschlag Precision Thin Film Chip Resistor Array for Conductive Gluing FEATURES • Gold terminations for conductive gluing • Superior moisture resistivity, |R/R| < 0.5 % 85 °C; 85 % RH; 1000 h • Rated dissipation P70 up to 125 mW per
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060electronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
MC ATAU - Precision
ACAS 0606 AT
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Untitled
Abstract: No abstract text available
Text: ARM-based Embedded MPU SAMA5D3 Series DATASHEET Description The Atmel SAMA5D3 series is a high-performance, power-efficient embedded MPU based on the ARM Cortex ® -A5 processor, achieving 536 MHz with power consumption levels below 0.5 mW in low-power mode. The device features a floating
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ST ARM CORE 1825 0255
Abstract: 55132-2 REV H
Text: ARM-based Embedded MPU SAMA5D3 Series DATASHEET Description The Atmel SAMA5D3 series is a high-performance, power-efficient embedded MPU based on the ARM Cortex ® -A5 processor, achieving 536 MHz with power consumption levels below 0.5 mW in low-power mode. The device features a floating
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transistor fcs 9012
Abstract: No abstract text available
Text: ARM-based Embedded MPU SAMA5D3 Series DATASHEET Description The Atmel SAMA5D3 series is a high-performance, power-efficient embedded MPU based on the ARM Cortex®-A5 processor, achieving 536 MHz with power consumption levels below 0.5 mW in low-power mode. The device features a floating
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Untitled
Abstract: No abstract text available
Text: AT91SAM ARM-based Embedded MPU SAMA5D3 Series PRELIMINARY DATASHEET Description The Atmel SAMA5D3 series is a high-performance, power-efficient embedded MPU based on the ARM Cortex -A5 processor, achieving 536 MHz with power consumption levels below 0.5 mW in low-power mode. The device features a floating
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AT91SAM
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4x0603
Abstract: No abstract text available
Text: V i shay I n tertech n o l o g y, I n c . ACAS 0 6 0 6 AT a nd ACAS 0 612 AT Pre cision Se r ie s Key Benefits • Two or four resistor values on one substrate • Superior moisture resistivity: < 0.5 % 85 °C; 85 % RH; 56 days • High power rating: P70 = 125 mW per resistor
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AEC-Q200
21-Dec-09
VMN-PT0160-1003
4x0603
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1616A
Abstract: No abstract text available
Text: 1616A 1310 nm DOCSIS 3.1 DFB Laser Module PRELIMINARY DATASHEET | JULY 2014 FIBER OPTICS The 1616A 1310 nm DOCSIS 3.1 DFB laser module is designed for both broadcast and narrowcast analog applications. The 1616A laser module is compliant with the new DOCSIS 3.1 standard, supporting operational bandwidth
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OC-48
1616x
1616A
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Untitled
Abstract: No abstract text available
Text: 1616A 1310 nm DOCSIS 3.1 DFB Laser Module PRELIMINARY DATASHEET | MAY 2014 FIBER OPTICS The 1616A 1310 nm DOCSIS 3.1 DFB laser module is designed for both broadcast and narrowcast analog applications. The 1616A laser module is compliant with the new DOCSIS 3.1 standard, supporting operational bandwidth
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OC-48
1616x
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2n3019 equivalent
Abstract: 2N3053 equivalent BC140 equivalent BC141 equivalent 2n930 equivalent bcy59 equivalent BC107 equivalent transistors 2N328A BC109C NPN bcy31
Text: Discrete Devices Transistors Cont. General Purpose Amplifiers (Cont.) Electrical Characteristics @ 25° C Maximum Ratings Type Polarity PD Ambient mW 2N2897 NPN 2N2898 NPN NPN 2N2899 2N2900 2N3019 2N3020 2 N 3036 2N3053 NPN NPN NPN NPN NPN VCB Volts VCE
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2N2897
2N2898
2N2899
2N2900
2N3019
2N3020
2N3036
2N3053
2N329A
BCY56
2n3019 equivalent
2N3053 equivalent
BC140 equivalent
BC141 equivalent
2n930 equivalent
bcy59 equivalent
BC107 equivalent transistors
2N328A
BC109C NPN
bcy31
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Untitled
Abstract: No abstract text available
Text: DRAM 6 • DRAM - Low Voltage Versions (CMOS) Vcc= +3.3V±0.3V, T a=0°C Organization (Wxb) Access Time max. (ns) Part Number Power Consumption max. (mW) Cycle Time min. (ns) M B81V 16 160 A -60 60[15]*1 1 10[40]"3 324 M B81V 16 160 A -70 70(17]*1 130[45]*3
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0A-60L
8160A
B81V16160B-50
B81V16160B-60
16160B-50L
16160B-60L
18160B-50
B81V1816CB-60
B-50L
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Untitled
Abstract: No abstract text available
Text: H M 5 1 W 1 6 1 6 0 A Preliminary S e r i e s 1 ,0 4 3 ,576-w ord x 16-bit D ynam ic R and o m A c c e ss M e m o ry HITACHI • Single 3.3 V + 0.3 V • High speed - Access time 60 ns/ 70 ns/ 80 ns (max) • Low power dissipation - Active mode 360 m\V/324 m\V/2S8 mW (max)
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576-w
16-bit
6160A
HM51VV16160
1616CAJ-7
60AJ-8
16160ATT-6
60ATT-7
60ATT-8
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J FET AM LNA
Abstract: No abstract text available
Text: A fr i Coming Attractions m an A M P com pany 250 mW Power Amplifier with T/R and Diversity Switches 2.4 - 2.5 GHz AM55-0003 Features SSOP-28 • H ighly In te g ra te d P o w e r A m plifier W ith T /R a n d D iversity S w itches _ +.0025 .0275 . 0025 • O p e ra te s O v e r 2.7 V to 6 V S u p p ly Voltage
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AM55-0003
SSOP-28
AM55-0003
46F-4658,
J FET AM LNA
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Untitled
Abstract: No abstract text available
Text: M X -1616, M X -818 □ M n E L FEATURES • • « • • 800 Nanoseconds settling time Programmable input mode Break-before-make switching Dielectrically isolated CMOS TTL/CMOS-compatible High-Speed CMOS Analog Multiplexers MECHANICAL DIMENSIONS INCHES MM
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MX-818
MX-1616
MX-818
MX-818C
MX-1616C
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M51W
Abstract: No abstract text available
Text: HM51W16165 Series HM51W18165 Series 16 M EDO DRAM 1-Mword x 16-bit 4 k Refresh/1 k Refresh HITACHI ADE-203-650D (Z) Rev. 4.0 Nov. 1997 Description The Hitachi HM 51W 16165 Series, HM 51W 18165 Series are CM OS dynam ic RAMs organized as 1,048,576-word X 16-bit. They employ the m ost advanced CMOS technology for high performance and
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HM51W16165
HM51W18165
16-bit)
ADE-203-650D
576-word
16-bit.
400-mil
42-pin
M51W
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mx618
Abstract: No abstract text available
Text: M X-1616, M X-818 High-Speed CMOS Analog M ultiplexers FEATURES • • • • 800 Nanoseconds settlin g tim e Program m able Input m ode B reak-before-m ake sw itching D ielectrically isolated CMOS LS • TTL/CMOS-compatible GENERAL DESCRIPTION The MX-1616 and MX-818 are high-speed,
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X-1616,
X-818
MX-1616
MX-818
DAC-HK12,
MX-818C
MX-1616C
02048-1194/TEL
339-3000/TLX
mx618
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NEC 4216160
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ _ _ _ _ _ _ /¡¿ P D 42S 16160, 4216160, 42S 18160,4218160 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description T h e /1 P D 4 2 S 1 6 1 6 0 ,4 21 6160, 4 2 S 1 8 1 6 0 ,4 2 1 8 1 6 0 a re 1,048, 576 w o rds by 16 b its C M O S d y n a m ic RA M s. T he
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16-BIT,
uPD42S16160
uPD4216160
uPD42S18160
uPD4218160
/zPD42S16160,
42-pin
VP15-207-2
NEC 4216160
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msm5116165a
Abstract: No abstract text available
Text: O K I Semiconductor MSM5 1 16165 A 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5116165A is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116165A achieves high integration, high-speed operation, and low-power
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MSM5116165
576-Word
16-Bit
MSM5116165A
42-pin
50/44-pin
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5 1 16160 A 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116160A is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116160A achieves high integration, high-speed operation, and low-power
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576-Word
16-Bit
MSM5116160A
42-pin
50/44-pin
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BG40
Abstract: LC99452
Text: Ordering number : ENN*6298 _ LC99452 ¡SAHYOI 2M pixel 2/3-inch Progressive Scan CCD Image Sensor with Square Pixel Preliminary Features • Very high resolution: 1616 x 1296 H x V pixels. progressive scan • 2/3 inch image area: 8.24mm x 6.61mm. Image diagonal
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LC99452
20-pin
002M3D7
BG40
LC99452
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