MW10050196 Search Results

MW10050196 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET JS 8834-A S Power GaAs FETs Chip Form Features • Medium power - P1dB = 21 dBm at f = 8 GHz • High gain - GidB = at f = 8 GHz • Suitable for C-Band amplifier • Ion implantation • Chip form RF Performance Specifications (Ta = 25° C)	OCR Scan	834-A JS8834-AS MW10050196 JS8834-AS	PDF

Catalog Datasheet

Type

Document Tags

PDF

Untitled

Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET JS 8834-A S Power GaAs FETs Chip Form Features • Medium power - P1dB = 21 dBm at f = 8 GHz • High gain - GidB = at f = 8 GHz • Suitable for C-Band amplifier • Ion implantation • Chip form RF Performance Specifications (Ta = 25° C)

OCR Scan

834-A JS8834-AS MW10050196 JS8834-AS

PDF