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    S9747

    Abstract: No abstract text available
    Text: TOSHIBA S9747 MICROWAVE POWER GaAs MMIC Features • High power - Po = 26 dBm at Pin = 5 dBm • Super low distortion - Padj = -62 dBc at Po = 25 dBm, 600 kHz offset • High gain - Gp = 21 dB at Pin = 5 dBm • Input/output port matched to 50Ω • Hermetically sealed package


    Original     		PDF S9747 MW20070196 S9747

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs MMIC S9747 Features • High power - Po = 26 dBm at Pin = 5 dBm • Super low distortion - Padj = -62 dBc at Po = 25 dBm, 600 kHz offset • High gain - Gp = 21 dB at Pin = 5 dBm • Input/output port matched to 5 0 ii • Hermetically sealed package


    OCR Scan     		PDF S9747 MW20070196

    MW200

    Abstract: S9747 28N-1
    Text: TOSHIBA MICROWAVE POWER GaAs MMIC S9747 Features • High power - Po = 26 dBm at Pin = 5 dBm • Super low distortion - Padj = -62 dBc at Po = 25 dBm, 600 kHz offset • High gain - Gp = 21 dB at Pin = 5 dBm • Input/output port matched to 50Q • Hermetically sealed package


    OCR Scan     		PDF S9747 MW20070196 MW200 S9747 28N-1