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    TPM1818-14

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TPM1818-14 High Power GaAs FETs L, S-Band Features • High power - P1dB = 42.0 dBm at 1.8 GHz • High gain - G1dB = 14.0 dB at 1.8 GHz • Partially matched type • Hermetically sealed package RF Performance Specifications (Ta = 25° C)


    Original     		PDF TPM1818-14 2-11D1B) MW40010196 TPM1818-14

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TPM1818-14 High Power GaAs FETs L, S-Band Features • High power " P-idB = 42.0 • High gain dBm at 1.8 G H Z - G idB = 14.0 dB at 1.8 GHz • Partially matched type • Hermetically sealed package RF Performance Specifications (Ta = 25° C)


    OCR Scan     		PDF TPM1818-14 2-11D1B) MW40010196