Untitled
Abstract: No abstract text available
Text: TOSHIBA TPM1818-30 MICROWAVE POWER GaAs FET High Power GaAs FETs L, S-Band Features • High power • P-idB = 44.5 dBm at 1.8 GHz • High gain - G idB = 12 dB at 1.8 GHz • Partially matched type • Hermetically sealed package RF Performance Specifications (Ta = 25° C)
|
OCR Scan
|
TPM1818-30
2-16G1B)
MW40020196
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TPM1818-30 High Power GaAs FETs L, S-Band Features • High power - P idB = 44.5 dBm at 1.8 GHz • High gain - G-idB = 12 dB at 1.8 GHz • Partially m atched type • H erm etically sealed package RF Performance Specifications (Ta = 25° C)
|
OCR Scan
|
TPM1818-30
2-16G1B)
MW40020196
|
PDF
|
TPM1818-30
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TPM1818-30 High Power GaAs FETs L, S-Band Features • High power - P1dB = 44.5 dBm at 1.8 GHz • High gain - G1dB = 12 dB at 1.8 GHz • Partially matched type • Hermetically sealed package RF Performance Specifications (Ta = 25° C)
|
Original
|
TPM1818-30
CharactTPM1818-30
2-16G1B)
MW40020196
TPM1818-30
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA TPM1818-30 MICROWAVE POWER GaAs FET High Power GaAs FETs L, S-Band Features • High power - P idB = 44.5 • High gain dBm at 1.8 GHz - G 1dB = 12 dB at 1.8 GHz • Partially m atched type • H erm etically sealed package Unit Min. Typ. Max dBm
|
OCR Scan
|
TPM1818-30
2-16G1B)
MW40020196
|
PDF
|