toshiba fet
Abstract: TPM2626-14
Text: TOSHIBA MICROWAVE POWER GaAs FET TPM2626-14 High Power GaAs FETs L, S-Band Features • High power - P1dB = 42.0 dBm at 2.6 GHz • High gain - G1dB = 12.0 dB at 2.6 GHz • Partially matched type • Hermetically sealed package RF Performance Specifications (Ta = 25° C)
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Original
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TPM2626-14
2-11D1B)
MW40050196
TPM2626-14
toshiba fet
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TPM2626-14 High Power GaAs FETs L, S-Band Features • High power - P idB = 42.0 • High gain dBm at 2.6 GHz - G idB = 12.0 dB at 2.6 GHz • Partially m atched type • H erm etically sealed package RF Performance Specifications (Ta = 25° C)
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OCR Scan
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TPM2626-14
MW40050196
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TPM2626-14 High Power GaAs FETs L, S-Band Features • High power - P idB = 42.0 dBm at 2.6 GHz • High gain - G-icb = 12.0 dB at 2.6 GHz • Partially m atched type • H erm etically sealed package RF Performance Specifications (Ta = 25° C)
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OCR Scan
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TPM2626-14
MW40050196
TPM2626-14
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PDF
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S-BAND
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TPM2626-14 High Power GaAs FETs L, S-Band Features • High power - P1dB = 42.0 dBm at 2.6 GHz • High gain - G id B = 12.0 dB at 2.6 GHz • Partially matched type • Hermetically sealed package RF Performance Specifications (Ta = 25° C)
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OCR Scan
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TPM2626-14
MW40050196
TPM2626-14
S-BAND
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PDF
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