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Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM 1011-2L Low Distortion Internally Matched Power GaAs FETs X, Ku-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 22 dBm, - Single carrier level • High power - P-|dB = 33.5 dBm at 10.7 GHz to 11.7 GHz |
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1011-2L 011-2L TIM1011-2L MW50080196 0C7250 002227b |