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    TIM1414-10LA

    Abstract: No abstract text available
    Text: TOSHIBA TIM1414-10LA MICROWAVE POWER GaAs FET Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 29.0 dBm, Single Carrier Level • High power - P1dB = 40.5 dBm at 14.0 GHz to 14.5 GHz • High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz


    Original     		TIM1414-10LA 2-11C1B) MW50360196 TIM1414-10LA PDF

    TIM1414-10LA

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET T IM 1 4 1 4 -1 0 L A Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 29.0 dBm, Single Carrier Level • High power - P1dB = 40.5 dBm at 14.0 GHz to 14.5 GHz • High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz


    OCR Scan     		MW50360196 TIM1414-10LA PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1414-10LA Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 29.0 dBm, Single Carrier Level • High power - P1dB = 40.5 dBm at 14.0 GHz to 14.5 GHz • High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz


    OCR Scan     		TIM1414-10LA Inte80 MW50350196 PDF