MW50450196 Search Results
MW50450196 Datasheets Context Search
Catalog Datasheet |
Type |
Document Tags |
PDF |
|---|---|---|---|
|
Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM3742-8L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - I M 3 = -45 d B c at Po = 28 dBm, - Single carrier level • High power - P1dB = 39 dBm at 3.7 GHz to 4.2 GHz |
OCR Scan |
TIM3742-8L MW50450196 3742-8L | |
TIM3742-8LContextual Info: TOSHIBA TIM3742-8L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 28 dBm, - Single carrier level • High power - P1dB = 39 dBm at 3.7 GHz to 4.2 GHz • High gain |
Original |
TIM3742-8L 2-11D1B) MW50450196 TIM3742-8L | |
|
Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM3742-8L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 28 dBm, - Single carrier level • High power - PidB = 39 dBm at 3.7 GHz to 4.2 GHz • High gain |
OCR Scan |
TIM3742-8L MW50450196 TIM3742-8L TGT72S0 00223LL |