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    TIM5359-30L

    Abstract: No abstract text available
    Text: TOSHIBA TIM5359-30L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 34.5 dBm, - Single carrier level • High power - P1dB = 45 dBm at 5.3 GHz to 5.9 GHz


    Original     		TIM5359-30L 2-16G1B) MW50680196 TIM5359-30L PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5359-30L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low in te rm o d u la tio n d is to rtio n - IM 3 = -45 d B c a t Po = 3 4 .5 d B m , - S in g le c a rrie r level • H igh p o w e r - P idB = 45 d B m a t 5 .3 G H z to 5.9 G H z


    OCR Scan     		TIM5359-30L MW50680196 TIM5359-30L PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5359-30L Low Distortion internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 34.5 dBm, - Single carrier level • High power - PldB = 45 dBm at 5.3 GHz to 5.9 GHz


    OCR Scan     		TIM5359-30L TIM5359-30L MW50680196 TCH7250 0Q22432 PDF