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    5964-16L

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-16L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low in te rm o d u la tio n d is to rtio n - IM 3 = -45 d B c a t Po = 3 1 .5 d B m , - S in g le c a rrie r level • H igh p o w e r - P idB = 4 2 .5 d B m at 5.9 G H z to 6.4 G H z


    OCR Scan     		TIM5964-16L MW50780196 5964-16L PDF

    TIM5964-16L

    Abstract: No abstract text available
    Text: TOSHIBA TIM5964-16L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 31.5 dBm, - Single carrier level • High power - P1dB = 42.5 dBm at 5.9 GHz to 6.4 GHz


    Original     		TIM5964-16L 2-16G1B) MW50780196 TIM5964-16L PDF