Untitled
Abstract: No abstract text available
Text: TOSHIBA TIM6472-8SL MICROWAVE POWER GaAs FET PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 28.5 dBm, Single Carrier Level • High power - P1dB = 39.5 dBm at 6.4 GHz to 7.2 GHz
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Original
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TIM6472-8SL
MW50900196
2-11D1B)
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM6472-8SL PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM 3 = -4 5 d B c at Po = 2 8 .5 d B m , Single Carrier Level • High po w e r
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OCR Scan
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PDF
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TIM6472-8SL
2-11D1B)
MW50900196
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM6472-8SL PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 28.5 dBm, Single Carrier Level • High power - P1dB = 39.5 dBm at 6.4 GHz to 7.2 GHz
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OCR Scan
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PDF
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TIM6472-8SL
2-11D1B)
MW50900196
TCH72S0
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