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    TIM7179-8

    Abstract: No abstract text available
    Text: TOSHIBA TIM7179-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 39 dBm at 7.1 GHz to 7.9 GHz • High gain - G1dB = 6.0 dB at 7.1 GHz to 7.9 GHz • Broad band internally matched • Hermetically sealed package


    Original     		PDF TIM7179-8 2-11D1B) MW50990196 TIM7179-8

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    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-8 Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 39 dBm at 7.1 GHz to 7.9 GHz • High gain - G 1dB = 6.0 dB at 7.1 GHz to 7.9 GHz • Broad band internally m atched • H erm etically sealed package


    OCR Scan     		PDF TIM7179-8 MW50990196 TIM7179-8