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    MW51 Price and Stock

    TE Connectivity SMW51R8JT

    RES SMD 1.8 OHM 5% 5W 5329
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    DigiKey SMW51R8JT Reel 3,000 500
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    Avnet Americas SMW51R8JT Reel 23 Weeks, 4 Days 1,000
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    Avnet Abacus SMW51R8JT 16 Weeks 1,000
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    Master Electronics SMW51R8JT
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    TE Connectivity SMW513RJT

    RES SMD 13 OHM 5% 5W 5329
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    DigiKey SMW513RJT Digi-Reel 1,973 1
    • 1 $1.76
    • 10 $1.027
    • 100 $0.6324
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    SMW513RJT Cut Tape 1,973 1
    • 1 $1.76
    • 10 $1.027
    • 100 $0.6324
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    SMW513RJT Reel 1,000 500
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    Newark SMW513RJT Cut Tape 271 1
    • 1 $1.03
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    Avnet Abacus SMW513RJT 16 Weeks 1,000
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    Master Electronics SMW513RJT
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    TE Connectivity SMW515RJT

    RES SMD 15 OHM 5% 5W 5329
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    DigiKey SMW515RJT Digi-Reel 1,460 1
    • 1 $1.76
    • 10 $1.027
    • 100 $0.6324
    • 1000 $0.53032
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    SMW515RJT Cut Tape 1,460 1
    • 1 $1.76
    • 10 $1.027
    • 100 $0.6324
    • 1000 $0.53032
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    SMW515RJT Reel 1,000 500
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    Mouser Electronics SMW515RJT 2,121
    • 1 $1.1
    • 10 $0.728
    • 100 $0.633
    • 1000 $0.388
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    Interstate Connecting Components SMW515RJT
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    Avnet Abacus SMW515RJT 16 Weeks 1,000
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    Master Electronics SMW515RJT 500
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    TE Connectivity SQMW5120RJ

    RES 120 OHM 5% 5W RADIAL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SQMW5120RJ Bulk 1,053 1
    • 1 $1.15
    • 10 $0.666
    • 100 $0.4044
    • 1000 $0.26123
    • 10000 $0.2229
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    Mouser Electronics SQMW5120RJ 1,157
    • 1 $0.53
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    • 100 $0.298
    • 1000 $0.244
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    Avnet Abacus SQMW5120RJ 16 Weeks 1,000
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    Master Electronics SQMW5120RJ
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    WEE SQMW5150RJ

    FIXED RESISTOR, WIRE WOUND, 5W,
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    DigiKey SQMW5150RJ Bulk 1,000 1,000
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    Find more MW51 price and stock on Findchips.com

    MW51 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MW511 Micronetics Wireless VCO FOR WCDMA APPLICATIONS Original PDF
    MW514 Micronetics Wireless VCO FOR CUSTOM APPLICATIONS Original PDF
    MW516 Micronetics Wireless VCO FOR WCDMA APPLICATIONS Original PDF
    MW51C2030GMBR1 Motorola GSM/GSM EDGE, W-CDMA, PHS 1930-1990 MHz, 30 W, 26 V RF LDMOS Wideband Integrated Power Amplifier Original PDF
    MW51C2030MBR1 Motorola GSM/GSM EDGE, W-CDMA, PHS 1930-1990 MHz, 30 W, 26 V RF LDMOS Wideband Integrated Power Amplifier Original PDF

    MW51 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MW500

    Abstract: MW511
    Text: MW511 VCOS FOR WCDMA APPLICATIONS SPECIFICATIONS Frequency Range: 2162 MHz @ 0.3V 2255 MHz @ 2.7V Phase Noise: @10 kHz: ≤-97 dBc/Hz @100 kHz: ≤-117 dBc/Hz Tuning Sensitivity: ≥40 MHz/V Spurious Response 2nd Harmonics : ≤-10 dBc Output Power: 9±3 dBm


    Original     		MW511 MW500 PDF

    MW516

    Abstract: MW500
    Text: MW516 VCOS FOR WCDMA APPLICATIONS SPECIFICATIONS Frequency Range: 2295 MHz @ 1V 2315 MHz @ 4V Phase Noise: @25 kHz ≤-107 dBc/Hz @100 kHz ≤-120 dBc/Hz Tuning Sensitivity: ≥10 MHz/V Spurious Response 2nd Harmonics : ≤-10 dBc Output Power: -2±3 dBm


    Original     		MW516 MW500 PDF

    MW500

    Abstract: MW514
    Text: MW514 VCOS FOR CUSTOM APPLICATIONS SPECIFICATIONS Frequency Range: 2132 MHz @ 0.5V 2225 MHz @ 3.0V Phase Noise: @10 kHz: ≤-100 dBc/Hz @100 kHz: ≤-120 dBc/Hz Tuning Sensitivity: ≥38 MHz/V Spurious Response 2nd Harmonics : ≤-18 dBc Output Power: 9±3 dBm


    Original     		MW514 MW500 PDF

    TIM7179-16

    Abstract: No abstract text available
    Text: TOSHIBA TIM7179-16 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 42.5 dBm at 7.1 GHz to 7.9 GHz • High gain - G1dB = 5.5 dB at 7.1 GHz to 7.9 GHz • Broad band internally matched • Hermetically sealed package


    Original     		TIM7179-16 2-16G1B) MW51020196 TIM7179-16 PDF

    TIM7785-7L

    Abstract: No abstract text available
    Text: TOSHIBA TIM7785-7L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -43 dBc at Po = 28.5 dBm, - Single carrier level • High power - P1dB = 38.5 dBm at 7.7 GHz to 8.5 GHz


    Original     		TIM7785-7L 2-11D1B) MW51060196 TIM7785-7 TIM7785-7L PDF

    TIM7785-16

    Abstract: fet toshiba
    Text: TOSHIBA TIM7785-16 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 42.5 dBm at 7.7 GHz to 8.5 GHz • High gain - G1dB = 5.0 dB at 7.7 GHz to 8.5 GHz • Broad band internally matched • Hermetically sealed package


    Original     		TIM7785-16 2-16G1B) MW51110196 TIM7785-16 fet toshiba PDF

    TIM7785-14L

    Abstract: No abstract text available
    Text: TOSHIBA TIM7785-14L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -43 dBc at Po = 31.5 dBm, - Single carrier level • High power - P1dB = 41.5 dBm at 7.7 GHz to 8.5 GHz


    Original     		TIM7785-14L 2-16G1B) MW51100196 TIM7785-14L PDF

    TIM7785-16L

    Abstract: No abstract text available
    Text: TOSHIBA TIM7785-16L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -42 dBc at Po = 31.5 dBm, - Single carrier level • High power - P1dB = 42 dBm at 7.7 GHz to 8.5 GHz


    Original     		TIM7785-16L 2-16G1B) MW51120196 TIM7785-16L PDF

    TIM7785-8

    Abstract: No abstract text available
    Text: TOSHIBA TIM7785-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 39 dBm at 7.7 GHz to 8.5 GHz • High gain - G1dB = 5.5 dB at 7.7 GHz to 8.5 GHz • Broad band internally matched • Hermetically sealed package


    Original     		TIM7785-8 2-11D1B) MW51070196 TIM7785-8 PDF

    TIM8596-4

    Abstract: No abstract text available
    Text: TOSHIBA TIM8596-4 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 8.5 GHz to 9.6 GHz • High gain - G1dB = 7.5 dB at 8.5 GHz to 9.6 GHz • Broadband internally matched • Hermetically sealed package


    Original     		TIM8596-4 MW51180196 TIM8596-4 PDF

    TIM7179-16L

    Abstract: No abstract text available
    Text: TOSHIBA TIM7179-16L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -42 dBc at Po = 31.5 dBm, - Single carrier level • High power - P1dB = 42 dBm at 7.1 GHz to 7.9 GHz


    Original     		TIM7179-16L 2-16G1B) MW51030196 TIM7179-16L PDF

    ks2000 cables pin serial diagram

    Abstract: twincat plc programming manual in BK7300 rs485 modbus connection beckhoff MODBUS CONNECTION modbus cable BC7300 KL9010 KL1012 mx508
    Text: MODBUS Bus Terminal Controller BC7300 Version: 1.5 Last change: 2006-11-06 Please note the following Target group This description is only intended for the use of trained specialists in control and automation engineering who are familiar with the applicable national


    Original     		BC7300 ks2000 cables pin serial diagram twincat plc programming manual in BK7300 rs485 modbus connection beckhoff MODBUS CONNECTION modbus cable BC7300 KL9010 KL1012 mx508 PDF

    TIM7984-30L

    Abstract: No abstract text available
    Text: TOSHIBA TIM7984-30L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 34.5 dBm, - Single carrier level • High power - P1dB = 45.0 dBm at 7.9 GHz to 8.4 GHz


    Original     		TIM7984-30L Pow25° 2-16G1B) MW51160196 TIM7984-30L PDF

    IEC1131-3

    Abstract: bc7300 KS2000 ks2000 kabel Lesen Sie mehr!
    Text: MODBUS Busklemmen Controller BC7300 Version: 1.5 Letzte Änderung: 06.11.06 Bitte beachten Sie folgende Hinweise Zielgruppe Diese Beschreibung wendet sich ausschließlich an ausgebildetes Fachpersonal der Steuerungs- und Automatisierungstechnik, die mit den geltenden nationalen Normen vertraut sind.


    Original     		BC7300 IEC1131-3 bc7300 KS2000 ks2000 kabel Lesen Sie mehr! PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7984-30L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low in te rm o d u la tio n d is to rtio n - IM 3 = -45 d B c a t Po = 3 4 .5 d B m , - S in g le c a rrie r level • H igh p o w e r - P idB = 45.0 d B m at 7.9 G H z to 8 .4 G H z


    OCR Scan     		TIM7984-30L 2-16G1B) MW51160196 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-4SL PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -4 5 d B c at Po = 2 5 .5 d B m , Single Carrier Level • High po w e r


    OCR Scan     		TIM7785-4SL MW51050196 7785-4SL PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-16 Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 42.5 dBm at 7.1 GHz to 7.9 GHz • High gain - G 1dB = 5.5 dB at 7.1 GHz to 7.9 GHz • Broad band internally m atched • H erm etically sealed package


    OCR Scan     		TIM7179-16 MW51020196 TIM7179-16 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TIM7984-30L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM 3 = -45 dBc at Po = 34.5 dBm, - Single carrier level • H i g h power * pidB = 45.0 dBm at 7.9 G H z to 8.4 GHz


    OCR Scan     		TIM7984-30L 2-16G1B) MW51160196 DD5271D ltH7250 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-30L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -43 dBc at Po = 34.5 dBm, - Single carrier level • H i g h power - PldB = 44.5 dBm at 7.7 GHz to 8.5 GHz


    OCR Scan     		TIM7785-30L TIM7785-30L MW51140196 DD22b3D PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TIM7785-8L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -44 dBc at Po = 28 dBm, - Single carrier level • H i g h power - P-|dB = 39 dBm at 7.7 GHz to 8.5 GHz


    OCR Scan     		TIM7785-8L MW51080196 TIM7785-8L PDF

    8901

    Abstract: diode 8902 82574 SSI-8901 Ex-89
    Text: SSI-8900 Series Optically coupled isolators Description The SSI-8901, 2 and 3 are a family of optically coupled isolators, each consisting of a gallium arsenide, near infrared light em itting diode, coupled to an NPN silicon phototransistor sealed in an injection moulded plastic housing. This


    OCR Scan     		SSI-8901, EX89C2096U 8901 diode 8902 82574 SSI-8901 Ex-89 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-4 Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 36.0 dBm at 7.7 GHz to 8.5 GHz • High gain - G 1dB = 6.0 dB at 7.7 GHz to 8.5 GHz • Broad band internally m atched • H erm etically sealed package


    OCR Scan     		TIM7785-4 MW51040196 TIM7785-4 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-16L Low Distortion Internally Matched Power GaAs FETs C-Band Features • L o w in te rm o d u la tio n d is to rtio n - IM 3 = -4 2 d B c a t Po = 3 1 .5 d B m , - S in g le c a r rie r le ve l • H ig h p o w e r


    OCR Scan     		TIM7785-16L MW51120196 TIM7785-16L PDF

    OPB105

    Abstract: No abstract text available
    Text: OPTEK TECHNOLOGY INC ObE D | bT'iôSÛO QOQQB^b 1 | u p iM io c ir o n ic i u iv is io r T R W Electronic Components Group m R ' wV Product Bulletin 5363 January 198S Photologic Slotted Optical Switches Type O PB 1050 0 Series OPB1Û51X Type H O U X O D O T M O K A T E S A NO D E


    OCR Scan     		PDF