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    TE Connectivity SQMW510RJ

    RES 10 OHM 5% 5W RADIAL
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    TE Connectivity SMW5100RJT

    RES SMD 100 OHM 5% 5W 5329
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    TE Connectivity SQMW5100RJ

    RES 100 OHM 5% 5W RADIAL
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    KEMET Corporation R75MW51004030J

    CAP FILM 10UF 5% 400VDC RADIAL
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    TE Connectivity SMW510RJT

    RES SMD 10 OHM 5% 5W 5329
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    MW510 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TIM7179-16

    Abstract: No abstract text available
    Text: TOSHIBA TIM7179-16 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 42.5 dBm at 7.1 GHz to 7.9 GHz • High gain - G1dB = 5.5 dB at 7.1 GHz to 7.9 GHz • Broad band internally matched • Hermetically sealed package


    Original
    TIM7179-16 2-16G1B) MW51020196 TIM7179-16 PDF

    TIM7785-7L

    Abstract: No abstract text available
    Text: TOSHIBA TIM7785-7L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -43 dBc at Po = 28.5 dBm, - Single carrier level • High power - P1dB = 38.5 dBm at 7.7 GHz to 8.5 GHz


    Original
    TIM7785-7L 2-11D1B) MW51060196 TIM7785-7 TIM7785-7L PDF

    TIM7785-8

    Abstract: No abstract text available
    Text: TOSHIBA TIM7785-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 39 dBm at 7.7 GHz to 8.5 GHz • High gain - G1dB = 5.5 dB at 7.7 GHz to 8.5 GHz • Broad band internally matched • Hermetically sealed package


    Original
    TIM7785-8 2-11D1B) MW51070196 TIM7785-8 PDF

    TIM7179-16L

    Abstract: No abstract text available
    Text: TOSHIBA TIM7179-16L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -42 dBc at Po = 31.5 dBm, - Single carrier level • High power - P1dB = 42 dBm at 7.1 GHz to 7.9 GHz


    Original
    TIM7179-16L 2-16G1B) MW51030196 TIM7179-16L PDF

    ks2000 cables pin serial diagram

    Abstract: twincat plc programming manual in BK7300 rs485 modbus connection beckhoff MODBUS CONNECTION modbus cable BC7300 KL9010 KL1012 mx508
    Text: MODBUS Bus Terminal Controller BC7300 Version: 1.5 Last change: 2006-11-06 Please note the following Target group This description is only intended for the use of trained specialists in control and automation engineering who are familiar with the applicable national


    Original
    BC7300 ks2000 cables pin serial diagram twincat plc programming manual in BK7300 rs485 modbus connection beckhoff MODBUS CONNECTION modbus cable BC7300 KL9010 KL1012 mx508 PDF

    IEC1131-3

    Abstract: bc7300 KS2000 ks2000 kabel Lesen Sie mehr!
    Text: MODBUS Busklemmen Controller BC7300 Version: 1.5 Letzte Änderung: 06.11.06 Bitte beachten Sie folgende Hinweise Zielgruppe Diese Beschreibung wendet sich ausschließlich an ausgebildetes Fachpersonal der Steuerungs- und Automatisierungstechnik, die mit den geltenden nationalen Normen vertraut sind.


    Original
    BC7300 IEC1131-3 bc7300 KS2000 ks2000 kabel Lesen Sie mehr! PDF

    twincat plc programming manual in

    Abstract: 16f020 SMALL ELECTRONICS PROJECTS in plc KL9010 C1220 IEC61131-3 Z1000 Z1100 KL1002 PLC PROGRAM beckhoff
    Text: LIGHTBUS Bus Terminal Controller BC2000 Technical Documentation Version 1.1 2006-11-06 Please note the following Target group This description is only intended for the use of trained specialists in control and automation engineering who are familiar with the applicable national


    Original
    BC2000 twincat plc programming manual in 16f020 SMALL ELECTRONICS PROJECTS in plc KL9010 C1220 IEC61131-3 Z1000 Z1100 KL1002 PLC PROGRAM beckhoff PDF

    TIM7785-4

    Abstract: No abstract text available
    Text: TOSHIBA TIM7785-4 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 36.0 dBm at 7.7 GHz to 8.5 GHz • High gain - G1dB = 6.0 dB at 7.7 GHz to 8.5 GHz • Broad band internally matched • Hermetically sealed package


    Original
    TIM7785-4 2-11D1B) MW51040196 TIM7785-4 PDF

    TIM7785-4SL

    Abstract: No abstract text available
    Text: TOSHIBA TIM7785-4SL MICROWAVE POWER GaAs FET PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 25.5 dBm, Single Carrier Level • High power - P1dB = 36.5 dBm at 7.7 GHz to 8.5 GHz


    Original
    TIM7785-4SL 2-11D1B) MW51050196 TIM7785-4SL PDF

    MW5108

    Abstract: TIM7785-8L
    Text: TOSHIBA TIM7785-8L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -44 dBc at Po = 28 dBm, - Single carrier level • High power - P1dB = 39 dBm at 7.7 GHz to 8.5 GHz • High gain


    Original
    TIM7785-8L 2-11D1B) MW51080196 TIM7785-8L MW5108 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-4SL PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -4 5 d B c at Po = 2 5 .5 d B m , Single Carrier Level • High po w e r


    OCR Scan
    TIM7785-4SL MW51050196 7785-4SL PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-16 Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 42.5 dBm at 7.1 GHz to 7.9 GHz • High gain - G 1dB = 5.5 dB at 7.1 GHz to 7.9 GHz • Broad band internally m atched • H erm etically sealed package


    OCR Scan
    TIM7179-16 MW51020196 TIM7179-16 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TIM7785-8L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -44 dBc at Po = 28 dBm, - Single carrier level • H i g h power - P-|dB = 39 dBm at 7.7 GHz to 8.5 GHz


    OCR Scan
    TIM7785-8L MW51080196 TIM7785-8L PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-4 Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 36.0 dBm at 7.7 GHz to 8.5 GHz • High gain - G 1dB = 6.0 dB at 7.7 GHz to 8.5 GHz • Broad band internally m atched • H erm etically sealed package


    OCR Scan
    TIM7785-4 MW51040196 TIM7785-4 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-8SL PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 28.5 dBm, Single Carrier Level • High power - P1dB = 39.5 dBm at 7.7 GHz to 8.5 GHz


    OCR Scan
    TIM7785-8SL TCH7250 TIM7785-8SL MW51090196 TGT725D DG227D4 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-16L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -42 dBc at Po = 31.5 dBm, - Single carrier level • High power * P-idB = 42 dBm at 7.1 GHz to 7.9 GHz


    OCR Scan
    TIM7179-16L MW51030196 DD22SÃ TIM7179-16L T0T7250 00225A4 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-4SL PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 25.5 dBm, Single Carrier Level • High power - P-idB = 36.5 dBm at 7.7 GHz to 8.5 GHz


    OCR Scan
    TIM7785-4SL 0022bfl3 TIM7785-4SL MW51050196 10172SG PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM 7785-8 Internally Matched Power GaAs FETs C-Band Features • High power - P-iob = 39 dBm at 7.7 GHz to 8.5 GHz • High gain - G1dB = 5.5 dB at 7.7 GHz to 8.5 GHz • Broad band internally matched • Hermetically sealed package


    OCR Scan
    MW51070196 1M725G TIM7785-8 TIM7785-8 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-8 Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 39 dBm at 7.7 GHz to 8.5 GHz • High gain - G 1dB = 5.5 dB at 7.7 GHz to 8.5 GHz • Broad band internally m atched • H erm etically sealed package


    OCR Scan
    TIM7785-8 MW51070196 TIM7785-8 PDF

    MW5108

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-8L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low in te rm o d u la tio n d is to rtio n - IM 3 = -44 d B c a t Po = 28 d B m , - S in g le c a rrie r level • H igh p o w e r - P idB = 39 d B m a t 7.7 G H z to 8.5 G H z


    OCR Scan
    TIM7785-8L MW51080196 7785-8L MW5108 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-8SL PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM 3 = -4 5 d B c at Po = 2 8 .5 d B m , Single Carrier Level • High po w e r


    OCR Scan
    TIM7785-8SL MW51090196 7785-8SL PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-14L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -43 dBc at Po = 31.5 dBm, - Single carrier level • High power - P1dB = 41.5 dBm at 7.1 GHz to 7.9 GHz


    OCR Scan
    TIM7179-14L 2-16G1B) MW51010196 DG22573 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-16 Internally Matched Power GaAs FETs C-Band Features • High power - PidB = 42.5 dBm at 7.1 GHz to 7.9 GHz • High gain - G1dB = 5.5 dB at 7.1 GHz to 7.9 GHz • Broad band internally matched • Hermetically sealed package


    OCR Scan
    TIM7179-16 TIM7179-16 MW51020196 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM 7785-7L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -43 dBc at Po = 28.5 dBm, - Single carrier level • H i g h power - P-|dB = 38.5 dBm at 7.7 G H z to 8.5 GHz


    OCR Scan
    7785-7L 785-7L TIM7785-7 MW51060196 22bfic PDF