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    TIM7785-7L

    Abstract: No abstract text available
    Text: TOSHIBA TIM7785-7L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -43 dBc at Po = 28.5 dBm, - Single carrier level • High power - P1dB = 38.5 dBm at 7.7 GHz to 8.5 GHz


    Original     		TIM7785-7L 2-11D1B) MW51060196 TIM7785-7 TIM7785-7L PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM 7785-7L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -43 dBc at Po = 28.5 dBm, - Single carrier level • H i g h power - P-|dB = 38.5 dBm at 7.7 G H z to 8.5 GHz


    OCR Scan     		7785-7L 785-7L TIM7785-7 MW51060196 22bfic PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-7L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low in te rm o d u la tio n d is to rtio n - IM 3 = -43 d B c a t Po = 2 8 .5 d B m , - S in g le c a rrie r level • H igh p o w e r - P idB = 3 8 .5 d B m at 7.7 G H z to 8 .5 G H z


    OCR Scan     		TIM7785-7L MW51060196 PDF