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    IXYS Corporation MWI50-12E7

    IGBT MODULE 1200V 90A 350W E2
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    MWI5012E7 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MWI50-12E7 IXYS IGBTs - Modules, Discrete Semiconductor Products, MOD IGBT SIXPACK H-BRDG 1200V E2 Original PDF
    MWI50-12E7 IXYS 1200V IGBT module Original PDF
    MWI50-12E7 IXYS IGBT Module Original PDF

    MWI5012E7 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IGBT inverter calculation

    Abstract: 3 phase IGBT inverter design design drive circuit of IGBT inverter circuit using IGBT module igbt igbt sixpack IXAN0070 IGBT JUNCTION TEMPERATURE CALCULATION igbt 600V 100A short circuit IGBT CHIP 1700V
    Text: IXAN0070 Drive with the IXYS XPT IGBT IXYS used its expertise to design the optimal IGBT for motor drives applications By Iain Imrie, Jeroen van Zeeland, Ulrich Kelberlau, Vladimir Tsukanov and Elmar Wisotzki IXYS Corporation IXYS introduces the XPT IGBT, IXYS newest generation of short-circuit rated IGBTs with paralleling


    Original     		PDF IXAN0070 IGBT inverter calculation 3 phase IGBT inverter design design drive circuit of IGBT inverter circuit using IGBT module igbt igbt sixpack IXAN0070 IGBT JUNCTION TEMPERATURE CALCULATION igbt 600V 100A short circuit IGBT CHIP 1700V

    IGBT inverter calculation

    Abstract: inverter circuit using IGBT module 3 phase IGBT inverter design IGBT inverter calculation FOR A UPS igbt module testing calculation of switching frequency of igbt inverter design drive circuit of IGBT IGBT igbt uses in rectifier IGBT JUNCTION TEMPERATURE CALCULATION
    Text: ISSN: 1863-5598 Electronics in Motion and Conversion ZKZ 64717 05-08 May 2008 COVER STORY The Optimal IGBT for Motor Drives Applications Drive with the XPT IGBT IXYS introduces the XPT IGBT, the newest generation of short-circuit rated IGBTs with paralleling capabilities and competitive performance. Implementation of innovative cell


    Original     		PDF

    MWI5012E7

    Abstract: No abstract text available
    Text: MWI 50-12 E7 MKI 50-12 E7 IC25 = 90 A = 1200 V VCES VCE sat typ. = 1.9 V IGBT Modules Sixpack, H Bridge Short Circuit SOA Capability Square RBSOA 13 13 1 5 9 1 9 2 6 10 2 10 16 16 15 14 14 3 7 11 3 11 4 17 8 12 4 17 12 MWI MKI Features IGBTs Symbol Conditions


    Original     		PDF MWI5012E7 MWI5012E7

    diode 331

    Abstract: No abstract text available
    Text: MWI 50-12 E7 MKI 50-12 E7 IC25 = 90 A = 1200 V VCES VCE sat typ. = 1.9 V IGBT Modules Sixpack, H Bridge Short Circuit SOA Capability Square RBSOA 13 13 1 5 9 1 9 2 6 10 2 10 16 16 15 14 14 3 7 11 3 11 4 17 8 12 4 17 12 MWI MKI Features IGBTs Symbol Conditions


    Original     		PDF MWI5012E7 diode 331

    E72873

    Abstract: DIODE 33 25
    Text: MWI 50-12 E7 MKI 50-12 E7 IC25 = 90 A = 1200 V VCES VCE sat typ. = 1.9 V IGBT Modules Sixpack, H Bridge Short Circuit SOA Capability Square RBSOA 13 13 1 5 9 1 9 2 6 10 2 10 16 16 15 14 14 3 7 11 3 11 4 17 8 12 4 17 12 MWI E72873 See outline drawing for pin arrangement


    Original     		PDF E72873 MWI5012E7 20070912a E72873 DIODE 33 25

    MWI50-12E7

    Abstract: DIODE 33 25 E72873
    Text: MWI 50-12 E7 MKI 50-12 E7 IC25 = 90 A = 1200 V VCES VCE sat typ. = 1.9 V IGBT Modules Sixpack, H Bridge Short Circuit SOA Capability Square RBSOA 13 13 1 5 9 1 9 2 6 10 2 10 16 16 15 14 14 3 7 11 3 11 4 17 8 12 4 17 12 MWI E72873 See outline drawing for pin arrangement


    Original     		PDF E72873 MWI5012E7 20070912a MWI50-12E7 DIODE 33 25 E72873