MX0912B251 Search Results

MX0912B251 Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
MX0912B251Y		Rochester Electronics LLC	MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die)

MX0912B251 Price and Stock

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Rochester Electronics LLC MX0912B251Y MX0912B251Y - NPN SILICON RF POW
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DigiKey	MX0912B251Y	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Ampleon MX0912B251Y,114 RF TRANS NPN 20V 1.215GHZ CDFM2
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DigiKey	MX0912B251Y,114	Tray				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Avnet Americas	MX0912B251Y,114	Bulk		13 Weeks	4	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Advanced Semiconductor Inc MX0912B251Y RF Bipolar Transistors 960-1215MHz Gain 7dB NPN
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Mouser Electronics	MX0912B251Y					1 - 10 $329.62 100 $329.62 1000 $329.62 10000 $329.62	Get Quote
Ampleon MX0912B251Y NPN microwave power transistor
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	MX0912B251Y		4,130		1	1 $286.01 10 $286.01 100 $268.85 1000 $243.11 10000 $243.11	Buy Now

MX0912B251 Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MX0912B251Y		Philips Semiconductors	NPN Microwave Power Transistor		Original	PDF
MX0912B251Y		Philips Semiconductors	NPN microwave power transistor		Scan	PDF
MX0912B251Y,114		NXP Semiconductors	NPN microwave power transistor - Application: Avionics - TACAN, JTIDS, DME ; Description: Avionics Bipolar RF POWER Transistor ; Duty cycle: 10 %; Efficiency: 45 %; Frequency: 960 - 1215 MHz; Load power: 275 W; Operating voltage: 50 VDC; Power gain: 7.5 dB; Pulse width: 10 us; Package: SOT439A (CDFM2); Container: Blister pack		Original	PDF
MX0912B251YTRAY		Philips Semiconductors	TRANS GP BJT NPN 20V 15A 3SOT439A BLISTER PACK TRAY		Original	PDF

MX0912B251 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MX0912B251Y Abstract: capacitor 470 uF Text: DISCRETE SEMICONDUCTORS DATA SHEET MX0912B251Y NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor MX0912B251Y FEATURES PINNING - SOT439A	Original	MX0912B251Y OT439A SCA53 127147/00/02/pp12 MX0912B251Y capacitor 470 uF	PDF
Untitled Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DAT MX0912B251Y NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor MX0912B251Y FEATURES PINNING - SOT439A • Interdigitated structure; high emitter efficiency	Original	MX0912B251Y OT439A SCA53 127147/00/02/pp12	PDF
LPC2148 i2c Abstract: BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent Text: Building blocks for vibrant media Highlights of the NXP product portfolio Building blocks for vibrant media At NXP Semiconductors, the new company founded by Philips, we’re driven by a single purpose — to deliver vibrant media technologies that create better sensory experiences.	Original	OT363 SC-88) LPC2148 i2c BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent	PDF
BC548 TRANSISTOR REPLACEMENT Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587 Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction	Original	BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587	PDF
Pallet VHF Power Amplifier Abstract: BLF578 BLF578 fm band Pallet VHF Power Amplifier TELEVISION blf574 BLF571 BLA6H1214-500 1200w power amplifier LDMOS DVB-T transistors power combiner 4 watt VHF Text: RF Power Presentation Broadcast ISM , Microwave and Cellular Richard Marlow: European Regional Marketing February 2009 Microwave, Broadcast & ISM Markets Broadcast (TV and radio transmission) – – – – – NXP has a long history (as Philips) and excellent reputation in the market	Original	BLF87x/88x) BLF57x) IS-95 BLF6G38S-25 OT608B BLF6G38-25 OT608A BLF6G38-10 Pallet VHF Power Amplifier BLF578 BLF578 fm band Pallet VHF Power Amplifier TELEVISION blf574 BLF571 BLA6H1214-500 1200w power amplifier LDMOS DVB-T transistors power combiner 4 watt VHF	PDF
MRF648 Abstract: TPV3100 2SC2897 macom TP3034 SD1393 TP3008 tp9383 transistor 2sC636 MRF255 equivalent Text: Cross References June 1999 RF PRODUCTS P/N CROSS REFERENCE VENDOR NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC	Original	2N5944 2N5945 2N5946 2N6082 2N6084 2N6439 2SC1257 2SC1258 2SC1259 2SC1605A MRF648 TPV3100 2SC2897 macom TP3034 SD1393 TP3008 tp9383 transistor 2sC636 MRF255 equivalent	PDF
Untitled Abstract: No abstract text available Text: LDMOS Transistors in Power Microwave Applications S.J.C.H. Theeuwen, H. Mollee NXP Semiconductors, Gerstweg 2, 6534 AE, Nijmegen, The Netherlands steven.theeuwen@nxp.com, hans.mollee@nxp.com Abstract— LDMOS transistors have become the device choice for microwave applications. An overview is given of the LDMOS	Original	IEDM2006,	PDF
tda8510j 2.1 creative amplifiers Abstract: transistor SMD wm9 SAA7119 IC TDA8510J EQUIVALENT IC NO. LIST Rf based remote control robot using 8051 SAA7119 philips TDA8947J equivalent BLF268 HEF4000B Family specifications TDA8947J Text: Semiconductors Choice. Performance. Flexibility. The Philips Portfolio 360º vision of multimedia Introduction to ��	Original	PNX1300 PNX1300, PNX1500 SAA6752 tda8510j 2.1 creative amplifiers transistor SMD wm9 SAA7119 IC TDA8510J EQUIVALENT IC NO. LIST Rf based remote control robot using 8051 SAA7119 philips TDA8947J equivalent BLF268 HEF4000B Family specifications TDA8947J	PDF
SD1446 Abstract: SD2910 philips blx15 BLV36 BLW60C st cross reference blw97 SD4575 BLV103 MX0912B350Y Text: June 1999 ST CROSS REFERENCE WITH PHILIPS INDUSTRY PART NUMBER BGY916 BLF145 BLF175 BLF177 BLF242 BLF244 BLF245 BLF245B BLF248 BLF278 BLF348 BLF368 BLF378 BLF548 BLU10/12 BLU20/12 BLU30/12 BLU30/28 BLU45/12 BLU60/12 BLU60/28 BLU97 BLU99 BLV12 BLV13 BLV30 BLV31	Original	BGY916 BLF145 BLF175 BLF177 BLF242 BLF244 BLF245 BLF245B BLF248 BLF278 SD1446 SD2910 philips blx15 BLV36 BLW60C st cross reference blw97 SD4575 BLV103 MX0912B350Y	PDF
BGU7073 Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188 Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by	Original		PDF
gk06 Abstract: microwave transistor S- parameter GK066 Text: Philips Semiconductors Product specification NPN microwave power transistor FEATURES MX0912B251Y PINNING - SOT439A • Interdigitated structure; high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR	OCR Scan	OT439A 100A101KP50X MX0912B251Y GK066 gk06 microwave transistor S- parameter GK066	PDF
JH transistor Abstract: MX0912B251Y SC15 Philips electrolytic screw Text: Philips Semiconductors Product specification NPN microwave power transistor MX0912B251Y FEATURES PINNING - SOT439A • Interdigitated structure; high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR	OCR Scan	MX0912B251Y OT439A MBC881 OT439A. JH transistor MX0912B251Y SC15 Philips electrolytic screw	PDF
Philips Semiconductors Selection Guide Abstract: LTE42005S BLS2731-10 Text: SELECTION GUIDE Page Pulsed power transistors for radar 8 Pulsed power transistors for avionics 8 Linear power transistors 9 CW power transistors 10 Oscillator power transistors 10 Philips Semiconductors Microwave transistors Selection guide PULSED POWER TRANSISTORS FOR RADAR	OCR Scan	RX1214B80W RX1214B130Y RX1214B170W RX1214B300Y RX1214B350Y RZ1214B35Y RZ1214B65Y BLS2731-10 BLS2731-20 BLS2731 Philips Semiconductors Selection Guide LTE42005S	PDF
LFE15 Abstract: LAE4001R BLS2731-50 BLS2731-10 Text: Philips Semiconductors Microwave Transistors Index ALPHANUMERIC INDEX Types added to the range since the last issue of Handbook SC15 1995 issue are shown in bold print. TYPE PAGE TYPE PAGE BLS2731-10 30 PLB16012U 247 BLS2731-20 33 PLB16030U 252 BLS2731-50	OCR Scan	BLS2731-10 BLS2731-20 BLS2731-50 BLS2731-110 BLS2731-150 LBE2003S LBE2009S LFE15600X LLE15180xX LLE15370X LFE15 LAE4001R	PDF