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    MX0912B251 Search Results

    MX0912B251 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    SF Impression Pixel

    MX0912B251 Price and Stock

    Rochester Electronics LLC MX0912B251Y

    MX0912B251Y - NPN SILICON RF POW
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    Ampleon MX0912B251Y,114

    RF TRANS NPN 20V 1.215GHZ CDFM2
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    Advanced Semiconductor Inc MX0912B251Y

    RF Bipolar Transistors 960-1215MHz Gain 7dB NPN
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    Mouser Electronics MX0912B251Y
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    Ampleon MX0912B251Y

    NPN microwave power transistor
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    Rochester Electronics MX0912B251Y 4,130 1
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    MX0912B251 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MX0912B251Y Philips Semiconductors NPN Microwave Power Transistor Original PDF
    MX0912B251Y Philips Semiconductors NPN microwave power transistor Scan PDF
    MX0912B251Y,114 NXP Semiconductors NPN microwave power transistor - Application: Avionics - TACAN, JTIDS, DME ; Description: Avionics Bipolar RF POWER Transistor ; Duty cycle: 10 %; Efficiency: 45 %; Frequency: 960 - 1215 MHz; Load power: 275 W; Operating voltage: 50 VDC; Power gain: 7.5 dB; Pulse width: 10 us; Package: SOT439A (CDFM2); Container: Blister pack Original PDF
    MX0912B251YTRAY Philips Semiconductors TRANS GP BJT NPN 20V 15A 3SOT439A BLISTER PACK TRAY Original PDF

    MX0912B251 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MX0912B251Y

    Abstract: capacitor 470 uF
    Text: DISCRETE SEMICONDUCTORS DATA SHEET MX0912B251Y NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor MX0912B251Y FEATURES PINNING - SOT439A


    Original     		PDF MX0912B251Y OT439A SCA53 127147/00/02/pp12 MX0912B251Y capacitor 470 uF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT MX0912B251Y NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor MX0912B251Y FEATURES PINNING - SOT439A • Interdigitated structure; high emitter efficiency


    Original     		PDF MX0912B251Y OT439A SCA53 127147/00/02/pp12

    LPC2148 i2c

    Abstract: BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent
    Text: Building blocks for vibrant media Highlights of the NXP product portfolio Building blocks for vibrant media  At NXP Semiconductors, the new company founded by Philips, we’re driven by a single purpose — to deliver vibrant media technologies that create better sensory experiences.


    Original     		PDF OT363 SC-88) LPC2148 i2c BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


    Original     		PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587

    Pallet VHF Power Amplifier

    Abstract: BLF578 BLF578 fm band Pallet VHF Power Amplifier TELEVISION blf574 BLF571 BLA6H1214-500 1200w power amplifier LDMOS DVB-T transistors power combiner 4 watt VHF
    Text: RF Power Presentation Broadcast ISM , Microwave and Cellular Richard Marlow: European Regional Marketing February 2009 Microwave, Broadcast & ISM Markets Broadcast (TV and radio transmission) – – – – – NXP has a long history (as Philips) and excellent reputation in the market


    Original     		PDF BLF87x/88x) BLF57x) IS-95 BLF6G38S-25 OT608B BLF6G38-25 OT608A BLF6G38-10 Pallet VHF Power Amplifier BLF578 BLF578 fm band Pallet VHF Power Amplifier TELEVISION blf574 BLF571 BLA6H1214-500 1200w power amplifier LDMOS DVB-T transistors power combiner 4 watt VHF

    MRF648

    Abstract: TPV3100 2SC2897 macom TP3034 SD1393 TP3008 tp9383 transistor 2sC636 MRF255 equivalent
    Text: Cross References June 1999 RF PRODUCTS P/N CROSS REFERENCE VENDOR NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC


    Original     		PDF 2N5944 2N5945 2N5946 2N6082 2N6084 2N6439 2SC1257 2SC1258 2SC1259 2SC1605A MRF648 TPV3100 2SC2897 macom TP3034 SD1393 TP3008 tp9383 transistor 2sC636 MRF255 equivalent

    Untitled

    Abstract: No abstract text available
    Text: LDMOS Transistors in Power Microwave Applications S.J.C.H. Theeuwen, H. Mollee NXP Semiconductors, Gerstweg 2, 6534 AE, Nijmegen, The Netherlands steven.theeuwen@nxp.com, hans.mollee@nxp.com Abstract— LDMOS transistors have become the device choice for microwave applications. An overview is given of the LDMOS


    Original     		PDF IEDM2006,

    tda8510j 2.1 creative amplifiers

    Abstract: transistor SMD wm9 SAA7119 IC TDA8510J EQUIVALENT IC NO. LIST Rf based remote control robot using 8051 SAA7119 philips TDA8947J equivalent BLF268 HEF4000B Family specifications TDA8947J
    Text: Semiconductors Choice. Performance. Flexibility. The Philips Portfolio 360º vision of multimedia Introduction to ��������������� � ������������� ������� ��������������


    Original     		PDF PNX1300 PNX1300, PNX1500 SAA6752 tda8510j 2.1 creative amplifiers transistor SMD wm9 SAA7119 IC TDA8510J EQUIVALENT IC NO. LIST Rf based remote control robot using 8051 SAA7119 philips TDA8947J equivalent BLF268 HEF4000B Family specifications TDA8947J

    SD1446

    Abstract: SD2910 philips blx15 BLV36 BLW60C st cross reference blw97 SD4575 BLV103 MX0912B350Y
    Text: June 1999 ST CROSS REFERENCE WITH PHILIPS INDUSTRY PART NUMBER BGY916 BLF145 BLF175 BLF177 BLF242 BLF244 BLF245 BLF245B BLF248 BLF278 BLF348 BLF368 BLF378 BLF548 BLU10/12 BLU20/12 BLU30/12 BLU30/28 BLU45/12 BLU60/12 BLU60/28 BLU97 BLU99 BLV12 BLV13 BLV30 BLV31


    Original     		PDF BGY916 BLF145 BLF175 BLF177 BLF242 BLF244 BLF245 BLF245B BLF248 BLF278 SD1446 SD2910 philips blx15 BLV36 BLW60C st cross reference blw97 SD4575 BLV103 MX0912B350Y

    BGU7073

    Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
    Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


    Original     		PDF

    gk06

    Abstract: microwave transistor S- parameter GK066
    Text: Philips Semiconductors Product specification NPN microwave power transistor FEATURES MX0912B251Y PINNING - SOT439A • Interdigitated structure; high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR


    OCR Scan     		PDF OT439A 100A101KP50X MX0912B251Y GK066 gk06 microwave transistor S- parameter GK066

    JH transistor

    Abstract: MX0912B251Y SC15 Philips electrolytic screw
    Text: Philips Semiconductors Product specification NPN microwave power transistor MX0912B251Y FEATURES PINNING - SOT439A • Interdigitated structure; high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR


    OCR Scan     		PDF MX0912B251Y OT439A MBC881 OT439A. JH transistor MX0912B251Y SC15 Philips electrolytic screw

    Philips Semiconductors Selection Guide

    Abstract: LTE42005S BLS2731-10
    Text: SELECTION GUIDE Page Pulsed power transistors for radar 8 Pulsed power transistors for avionics 8 Linear power transistors 9 CW power transistors 10 Oscillator power transistors 10 Philips Semiconductors Microwave transistors Selection guide PULSED POWER TRANSISTORS FOR RADAR


    OCR Scan     		PDF RX1214B80W RX1214B130Y RX1214B170W RX1214B300Y RX1214B350Y RZ1214B35Y RZ1214B65Y BLS2731-10 BLS2731-20 BLS2731 Philips Semiconductors Selection Guide LTE42005S

    LFE15

    Abstract: LAE4001R BLS2731-50 BLS2731-10
    Text: Philips Semiconductors Microwave Transistors Index ALPHANUMERIC INDEX Types added to the range since the last issue of Handbook SC15 1995 issue are shown in bold print. TYPE PAGE TYPE PAGE BLS2731-10 30 PLB16012U 247 BLS2731-20 33 PLB16030U 252 BLS2731-50


    OCR Scan     		PDF BLS2731-10 BLS2731-20 BLS2731-50 BLS2731-110 BLS2731-150 LBE2003S LBE2009S LFE15600X LLE15180xX LLE15370X LFE15 LAE4001R