Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MX29F16 Search Results

    SF Impression Pixel

    MX29F16 Price and Stock

    Macronix International Co Ltd MX29F1610MC-12

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MX29F1610MC-12 11
    • 1 $6.72
    • 10 $3.36
    • 100 $3.36
    • 1000 $3.36
    • 10000 $3.36
    		Buy Now

    Macronix International Co Ltd MX29F1610AMC90

    Electronic Component
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA MX29F1610AMC90 14
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Others MX29F1610BTC90

    INSTOCK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Chip 1 Exchange MX29F1610BTC90 12,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    MX29F16 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MX29F1610 Macronix International 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM Original PDF
    MX29F1610A Macronix International 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM Original PDF
    MX29F1610A-10 Macronix International 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM Original PDF
    MX29F1610A-12 Macronix International 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM Original PDF
    MX29F1610A-90 Macronix International 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM Original PDF
    MX29F1610A/B Macronix International 16M-BIT [2M x8/1M x16] CMOS Original PDF
    MX29F1610B-10 Macronix International 16M-BIT (2M x8/1M x16) CMOS SINGLE VOLTAGE FLASH EEPROM Original PDF
    MX29F1610B-12 Macronix International 16M-BIT (2M x8/1M x16) CMOS SINGLE VOLTAGE FLASH EEPROM Original PDF
    MX29F1610B-90 Macronix International 16M-BIT (2M x8/1M x16) CMOS SINGLE VOLTAGE FLASH EEPROM Original PDF
    MX29F1611 Macronix International 16M-BIT [2M x 8/1M x 16] CMOS Original PDF
    MX29F1611 Macronix International 16m-bit [2m x 8/1m x 16] Cmos Single Voltage Pagemode Flash Eeprom Original PDF
    MX29F1615 Macronix International 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM Original PDF

    MX29F16 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    29f1615

    Abstract: MX29f1615
    Text: PRELIMINARY MX29F1615 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • Software and hardware data protection • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100 cycles


    Original     		MX29F1615 16M-BIT 90/100/120ns PM0615 JUN/15/2001 29f1615 MX29f1615 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY MX29F1610A 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100,000 cycles Fast access time: 90/100/120ns


    Original     		MX29F1610A 16M-BIT 90/100/120ns Nov/10/1998 MAR/31/1999 MAY/18/1999 JUN/20/2000 NOV/16/2000 PDF

    MX29F1610A

    Abstract: MX29F1610B PM05
    Text: Introduction Selection Guide PRELIMINARY MX29F1610A/B 16M-BIT 2M x 8/1M x 16 CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • 5V ± 10% write and erase • JEDEC-standard EEPROM commands • Endurance:100,000 cycles • Fast access time: 70/90/120ns • Sector erase architecture


    Original     		MX29F1610A/B 16M-BIT 70/90/120ns MX29F1610A MX29F1610B PM05 PDF

    MX29F1611

    Abstract: No abstract text available
    Text: Introduction Selection Guide PRELIMINARY MX29F1611 FEATURES 16M-BIT[2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM 5V ± 5% write, erase and read JEDEC-standard EEPROM commands Endurance: 10,000 cycles Fast access time: 100/120/150ns Fast pagemode access time: 50/60/70ns


    Original     		MX29F1611 16M-BIT 100/120/150ns 50/60/70ns 150ms MX29F1611 PDF

    MX29F1610

    Abstract: 29F1610-12 00F1H
    Text: Introduction Selection Guide MX29F1610 16M-BIT 2M x 8/1M x 16 CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • 5V ± 10% write and erase • JEDEC-standard EEPROM commands • Endurance:10,000 cycles • Fast access time: 120/150ns • Sector erase architecture


    Original     		MX29F1610 16M-BIT 120/150ns 150ms MX29F1610 29F1610-12 00F1H PDF

    Untitled

    Abstract: No abstract text available
    Text: MX29F1610TC-12C3 1/2 IL08 16 M (2,097,152 x 8/1,048,576 x 16)-BIT FLASH EPROM —TOP VIEW— 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 INPUTS A0 - A19 BYTE CE1, CE2


    Original     		MX29F1610TC-12C3 Q15/A-1 MX29F1610 PDF

    MX-1610

    Abstract: No abstract text available
    Text: APPLICATION NOTE MX29F1610 16Mb FLASH MEMORY Since the erase/program time for flash memory are depended on the operation temperature, number of cycle, Vcc, and other factors. This application note is trying to optimize the erase/program performance by using the polling technology to check the


    Original     		MX29F1610 F16MSetupAddr1] F16MSetupCmd1; F16MSetupAddr2] F16MSetupCmd2; F16MSetupAddr3] MX1610 MX-1610 PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED INFORMATION MX29F1615 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • Software and hardware data protection • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100 cycles


    Original     		MX29F1615 16M-BIT 90/100/120ns P14-17 MAY/05/1999 OCT/01/1999 NOV/03/1999 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY MX29F1611 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM FEATURES • Low VCC write inhibit is equal to or less than 3.2V • Software and hardware data protection • Page program operation - Internal address and data latches for 128 bytes/64


    Original     		MX29F1611 16M-BIT bytes/64 100uA 100/120/150ns PM0440 PDF

    MX29F1610B

    Abstract: MX29F1610A
    Text: PRELIMINARY MX29F1610A/B 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100,000 cycles Fast access time: 90/100/120ns


    Original     		MX29F1610A/B 16M-BIT 90/100/120ns May/13/1998 Nov/10/1998 MAR/31/1999 MAY/18/1999 JUN/20/2000 MX29F1610B MX29F1610A PDF

    MX29F1610B

    Abstract: No abstract text available
    Text: PRELIMINARY MX29F1610A 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100,000 cycles Fast access time: 90/100/120ns


    Original     		MX29F1610A 16M-BIT 90/100/120ns Nov/10/1998 MAR/31/1999 MAY/18/1999 JUN/20/2000 NOV/16/2000 JUN/15/2001 NOV/21/2002 MX29F1610B PDF

    MX29F1610B

    Abstract: MX29F1610A
    Text: PRELIMINARY MX29F1610A 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100,000 cycles Fast access time: 90/100/120ns


    Original     		MX29F1610A 16M-BIT 90/100/120ns Nov/10/1998 MAR/31/1999 MAY/18/1999 JUN/20/2000 NOV/16/2000 JUN/15/2001 MX29F1610B MX29F1610A PDF

    29f1615

    Abstract: MX29f1615 29f1615-10
    Text: PRELIMINARY MX29F1615 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • Software and hardware data protection • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100 cycles


    Original     		MX29F1615 16M-BIT 90/100/120ns JUN/15/2001 NOV/21/2002 29f1615 MX29f1615 29f1615-10 PDF

    29F1615

    Abstract: mx29f1615
    Text: PRELIMINARY MX29F1615 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • Software and hardware data protection • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100 cycles


    Original     		MX29F1615 16M-BIT 90/100/120ns compatibl23 42-PIN PM0615 29F1615 mx29f1615 PDF

    27080

    Abstract: crystal 4MHz crystal 32768hz ADD12 ST2108 ADD-10 Low Voltage Detector ST2100 ADD10 65C02
    Text: Sitronix ST2100/08 Development Tool User Guide 1. ST21xx E.V. Board Figure 65C02 CPU J7 MX29F16 J4 9V DC IN - Program ROM + U11 U5 Sitronix U6 Crystal 32768Hz SYS[0] SYS[1] SYS[2] SYS[3] SYS[4] SYS[5] SYS[6] SYS[7] STOPB SBYBO BIOS U8 U12 OFF / ON Y1 J12 Crystal


    Original     		ST2100/08 ST21xx 65C02 MX29F16 32768Hz ST2100/2108) Prog080 2000-May-15 27080 crystal 4MHz crystal 32768hz ADD12 ST2108 ADD-10 Low Voltage Detector ST2100 ADD10 65C02 PDF

    29f1615

    Abstract: No abstract text available
    Text: MX29F1615 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • Software and hardware data protection • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100 cycles Fast access time: 90/100/120ns


    Original     		MX29F1615 16M-BIT 90/100/120ns JUN/15/2001 NOV/21/2002 JAN/27/2004 PM0615 29f1615 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY MX29F1610A/B 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100,000 cycles Fast access time: 90/120ns


    Original     		MX29F1610A/B 16M-BIT 90/120ns PDF

    Untitled

    Abstract: No abstract text available
    Text: MX29F1610 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:10,000 cycles Fast access time: 100/120ns Sector erase architecture - 16 equal sectors of 128k bytes each


    Original     		MX29F1610 16M-BIT 100/120ns 150ms PM0260 PDF

    MX29F1610

    Abstract: MX29F1610B MX29F1610A A14A
    Text: INDEX PRELIMINARY MX29F1610A/B 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100,000 cycles Fast access time: 70/90/120ns


    Original     		MX29F1610A/B 16M-BIT 70/90/120ns MX29F1610 MX29F1610B MX29F1610A A14A PDF

    MX29F1611

    Abstract: No abstract text available
    Text: INDEX PRELIMINARY MX29F1611 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM FEATURES • Low VCC write inhibit is equal to or less than 3.2V • Software and hardware data protection • Page program operation - Internal address and data latches for 128 bytes/64


    Original     		MX29F1611 16M-BIT bytes/64 100uA 100/120/150ns PM0440 MX29F1611 PDF

    microcontroller based caller id by using 8051

    Abstract: sound activated based lcd message display 8051 0038a 8088 memory interface SRAM ECHO canceller IC ED11 ED12 ED13 MX93002 MX93032
    Text: MX93032 APPLICATION NOTE [M1 VERSION] 1.0 GENERAL DESCRIPTIONS echo cancellation and acoustical echo cancellation, etc. • The MX93032-M1 has built-in DSP mode and MCU mode. In DSP mode, users do not need external microprocessors and can effectively reduce the overall


    Original     		MX93032 MX93032-M1 PM0689 microcontroller based caller id by using 8051 sound activated based lcd message display 8051 0038a 8088 memory interface SRAM ECHO canceller IC ED11 ED12 ED13 MX93002 MX93032 PDF

    Untitled

    Abstract: No abstract text available
    Text: MXIC MX29F1610 1 6 M-BIT 2 M X 8 / 1 M X 1 6 CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:"! 0,000 cycles Fast access time: 120/150ns Sector erase architecture


    OCR Scan     		MX29F1610 120/150ns 150ms Int03/11/1998 44-PIN 48-PIN PDF

    Untitled

    Abstract: No abstract text available
    Text: r a iU M — IWXIC FEATURES ì m y MX29F1611 1 6 M-BIT[2 M X 8 / 1 M X 1 6 ] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM • • • • • • 5V ± 5% write, erase and read JEDEC-standard EEPROM commands Endurance: 10,000 cycles Fast access time: 100/120/150ns


    OCR Scan     		MX29F1611 100/120/150ns 50/60/70ns 150ms det98 PM0440 44-PIN PDF

    00F1H

    Abstract: No abstract text available
    Text: • v p a c _MX29F1 610 1 B M -B IT C 2 M x S / 1 M x 1 6 C M O S S IN G U E V O L T A G E F L A S H E E P R O M FEATURES • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Minimum 1,000/10,000 write/erase cycles


    OCR Scan     		MX29F1 100/120/150ns -100mA 100mA 100ns 00F1H PDF