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    MXIC FLASH DISK CONTROLLER Search Results

    MXIC FLASH DISK CONTROLLER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSM6J808R Toshiba Electronic Devices & Storage Corporation MOSFET, P-ch, -40 V, -7 A, 0.035 Ohm@10V, TSOP6F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM6K819R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 10 A, 0.0258 Ohm@10V, TSOP6F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM6K809R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, TSOP6F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM6K504NU Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 30 V, 9.0 A, 0.0195 Ohm@10V, UDFN6B, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation

    MXIC FLASH DISK CONTROLLER Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MX-1610

    Abstract: intel 28f200 db86082 mx1610 intel 80586 MX28F002 MXIC flash disk controller db86082b MX26C1000A KM29N32000
    Text: APPLICATION NOTES 1. TYPICAL NONVOLATILE MEMORY APPLICATION 2.) ON-BOARD PROGRAMMING DESIGN CONSIDERATIONS FOR THE MX26C512A 3.) ON-BOARD PROGRAMMING OF THE MX26C1000A 4.) IN-CIRCUIT PROGRAMMING OF THE MX26C1024A 5.) 2M FLASH MEMORY 6.) 8M FLASH MEMORY 7.) MX25L4004A 4M-BIT 4MX1) CMOS SERIAL FLASH MEMORY


    Original     		MX26C512A MX26C1000A MX26C1024A MX25L4004A MX29F1610 MX26C512A, 512K-bit MX26C512A MX9691 MX-1610 intel 28f200 db86082 mx1610 intel 80586 MX28F002 MXIC flash disk controller db86082b MX26C1000A KM29N32000 PDF

    25U4035

    Abstract: 25U1635E uson+8+land+pattern
    Text: The Ultimate Performance Flash Memory Macronix Serial Multi I/O MXSMIOTM Flash www.macronix.com Contents Why Use MXSMIOTM Family? 3 ● Advantages of Macronix Serial Multi-I/O Flash Family 4 ● Worldwide NOR Flash Trend 5 ● The Fastest Performance Serial Flash on the Market


    Original     		PDF

    MXIC flash disk controller

    Abstract: macronix mxic dsp MX93011 HD11 MX51L9692 MXIC sequential
    Text: PRELIMINARY MX51L9692 Multiple Interface Flash and MROM Memory Controller 1. Features Flash/MROM Memory Interface: • Support all the control signals to execute read/write/ erase operation for Samsung's, Toshiba's, and Hitachi's serial type Flash memory.


    Original     		MX51L9692 256Mbit 64Mbit/128Mbit/256Mbit/512Mbit PM0935 MXIC flash disk controller macronix mxic dsp MX93011 HD11 MX51L9692 MXIC sequential PDF

    mother board intel block diagram

    Abstract: GeForce2 MX 400 sis 962 sis 962l p4p800 sis962L AU6331 sis 964 sandisk micro sd kingston micro SD card
    Text: Test Report Au6331 - MBL Chip USB2.0 Muliti-Flash Memory Card Reader Controller Test Result Pass July 26, 2005 Tester Claude: Product Part Number Au6331A31-MBL Golden Sample Number Au6331A31-MBL Test Result Summary： NO 1 Test Item Hardware Result Microsoft OS.


    Original     		Au6331 Au6331A31-MBL mother board intel block diagram GeForce2 MX 400 sis 962 sis 962l p4p800 sis962L sis 964 sandisk micro sd kingston micro SD card PDF

    MX29F1610A

    Abstract: MX29F1610B PM05
    Text: Introduction Selection Guide PRELIMINARY MX29F1610A/B 16M-BIT 2M x 8/1M x 16 CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • 5V ± 10% write and erase • JEDEC-standard EEPROM commands • Endurance:100,000 cycles • Fast access time: 70/90/120ns • Sector erase architecture


    Original     		MX29F1610A/B 16M-BIT 70/90/120ns MX29F1610A MX29F1610B PM05 PDF

    MX29F1610B

    Abstract: MX29F1610A
    Text: PRELIMINARY MX29F1610A/B 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100,000 cycles Fast access time: 90/100/120ns


    Original     		MX29F1610A/B 16M-BIT 90/100/120ns May/13/1998 Nov/10/1998 MAR/31/1999 MAY/18/1999 JUN/20/2000 MX29F1610B MX29F1610A PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY MX29F1610A/B 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100,000 cycles Fast access time: 90/120ns


    Original     		MX29F1610A/B 16M-BIT 90/120ns PDF

    MX29F1610

    Abstract: MX29F1610B MX29F1610A A14A
    Text: INDEX PRELIMINARY MX29F1610A/B 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100,000 cycles Fast access time: 70/90/120ns


    Original     		MX29F1610A/B 16M-BIT 70/90/120ns MX29F1610 MX29F1610B MX29F1610A A14A PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY MX29F1610A 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100,000 cycles Fast access time: 90/100/120ns


    Original     		MX29F1610A 16M-BIT 90/100/120ns Nov/10/1998 MAR/31/1999 MAY/18/1999 JUN/20/2000 NOV/16/2000 PDF

    MX29F1610B

    Abstract: No abstract text available
    Text: PRELIMINARY MX29F1610A 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100,000 cycles Fast access time: 90/100/120ns


    Original     		MX29F1610A 16M-BIT 90/100/120ns Nov/10/1998 MAR/31/1999 MAY/18/1999 JUN/20/2000 NOV/16/2000 JUN/15/2001 NOV/21/2002 MX29F1610B PDF

    MX29F1610B

    Abstract: MX29F1610A
    Text: PRELIMINARY MX29F1610A 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100,000 cycles Fast access time: 90/100/120ns


    Original     		MX29F1610A 16M-BIT 90/100/120ns Nov/10/1998 MAR/31/1999 MAY/18/1999 JUN/20/2000 NOV/16/2000 JUN/15/2001 MX29F1610B MX29F1610A PDF

    MX29F1610

    Abstract: 29F1610-12 00F1H
    Text: Introduction Selection Guide MX29F1610 16M-BIT 2M x 8/1M x 16 CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • 5V ± 10% write and erase • JEDEC-standard EEPROM commands • Endurance:10,000 cycles • Fast access time: 120/150ns • Sector erase architecture


    Original     		MX29F1610 16M-BIT 120/150ns 150ms MX29F1610 29F1610-12 00F1H PDF

    29F8100-12

    Abstract: MX29F8100 MXIC flash disk controller
    Text: INDEX PRELIMINARY MX29F8100 8M-BIT [1M x 8/512K x 16] CMOS SINGLE VOLTAGE FLASH MEMORY FEATURES • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance : 10,000 cycles Fast access time: 120/150ns Sector erase architecture - 8 equal sectors of 128k bytes each


    Original     		MX29F8100 8/512K 120/150ns PM0262 29F8100-12 MX29F8100 MXIC flash disk controller PDF

    Untitled

    Abstract: No abstract text available
    Text: MX29F1610 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:10,000 cycles Fast access time: 100/120ns Sector erase architecture - 16 equal sectors of 128k bytes each


    Original     		MX29F1610 16M-BIT 100/120ns 150ms PM0260 PDF

    29F8100-12

    Abstract: MX29F8100
    Text: Introduction Selection Guide PRELIMINARY MX29F8100 8M-BIT 1M x 8/512K x 16 CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance : 10,000 cycles Fast access time: 120/150ns


    Original     		MX29F8100 8/512K 120/150ns oper887 CA95131 29F8100-12 MX29F8100 PDF

    lm121ss1t53

    Abstract: ambit t62i172 TX31D35VC1CAA Fujitsu Siemens inverter AMBIT inverter South Bridge ALI M1535 JU226A252FC TX*D*CAA ali m1535 ambit t62
    Text: TravelMate 200 Service Guide Service guide files and updates are available on the AIPG/CSD web; for more information, please refer to http://csd.acer.com.tw PART NO.: 49.40G02.001 DOC. NO.: SG337.0008A PRINTED IN TAIWAN Copyright Copyright 1999 by Acer Incorporated. All rights reserved. No part of this publication may be reproduced,


    Original     		40G02 SG337 lm121ss1t53 ambit t62i172 TX31D35VC1CAA Fujitsu Siemens inverter AMBIT inverter South Bridge ALI M1535 JU226A252FC TX*D*CAA ali m1535 ambit t62 PDF

    lm121ss1t53

    Abstract: ambit t62 JU-226A252FC ali m1535 TX31D35VC1CAA South Bridge ALI M1535 AMBIT inverter mxic lot number on the labels MXIC Lot Code Identification TX31D*VC1CAA
    Text: TravelMate 200 Service Guide Service guide files and updates are available on the AIPG/CSD web; for more information, please refer to http://csd.acer.com.tw PART NO.: 49.50F02.001 DOC. NO.: SG351 PRINTED IN TAIWAN Revision History Please refer to the table below for the updates made on TravelMate 200 service guide.


    Original     		50F02 SG351 lm121ss1t53 ambit t62 JU-226A252FC ali m1535 TX31D35VC1CAA South Bridge ALI M1535 AMBIT inverter mxic lot number on the labels MXIC Lot Code Identification TX31D*VC1CAA PDF

    Untitled

    Abstract: No abstract text available
    Text: MXIC M X2 9 FI 6 1 OA/ B 1 6 M-BIT 2 M X 8 / 1 M X 1 6 CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:"! 00,000 cycles Fast access time: 70/90/120ns Sector erase architecture


    OCR Scan     		70/90/120ns MX29F1610A/ 44-PIN 48-PIN PDF

    00F1H

    Abstract: No abstract text available
    Text: • v p a c _MX29F1 610 1 B M -B IT C 2 M x S / 1 M x 1 6 C M O S S IN G U E V O L T A G E F L A S H E E P R O M FEATURES • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Minimum 1,000/10,000 write/erase cycles


    OCR Scan     		MX29F1 100/120/150ns -100mA 100mA 100ns 00F1H PDF

    Untitled

    Abstract: No abstract text available
    Text: MXIC MX29F1610 1 6 M-BIT 2 M X 8 / 1 M X 1 6 CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:"! 0,000 cycles Fast access time: 120/150ns Sector erase architecture


    OCR Scan     		MX29F1610 120/150ns 150ms Int03/11/1998 44-PIN 48-PIN PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY MX29F1 61 OA/B 16M-BIT [2M x8/1 M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • Page program operation - Internal address and data latches for 128 bytes/64 words per page - Page programming time: 0.9ms typical - Byte programming time: 7us in average


    OCR Scan     		MX29F1 16M-BIT bytes/64 70/90/120ns 48-PIN PDF

    Q20G

    Abstract: 00F1H MX-2S
    Text: is M « r r c a M FEATURES • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPRO M commands Minimum 1,000/10,000 write/erase cycles Fast access time: 100/120/150ns Sector erase architecture - 16 equal sectors of 128k bytes each


    OCR Scan     		100/120/150ns -100mA 100mA 100ns Q20G 00F1H MX-2S PDF

    mxab

    Abstract: IX-29
    Text: _ _ _ _ _ _ _ _ _M X 2 FEATURES • • • • • • • • • 9 F8 1 OO 8 M - B r r t 'IM x 8 / 5 * 1 H K x I S C M O S S IN G L E V O L T A G E F L A S H E E P R O M 5V ± 10% write and erase JEDEC-standard EEPROM commands Minimum 1,000/10,000 write/erase cycles


    OCR Scan     		100/120/150ns -100mA 100mA 100ns mxab IX-29 PDF

    00F1H

    Abstract: No abstract text available
    Text: TM M X29F161Q MACftOMX, INC. 1 B IS A -B n tS M x 8 / 1 M x 1 B C M 0 8 S IN G L E V O L T A G E F L A S H E E P R O M FEATURES • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Minimum 100,000 write/erase cycles


    OCR Scan     		X29F161Q 120ns X29F1610 -100mA 100mA 00F1H PDF