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    N -CHANNEL POWER SOT 6 Search Results

    N -CHANNEL POWER SOT 6 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K341R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    N -CHANNEL POWER SOT 6 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETS CJ7252KDW N Channel + P Channel Power MOSFET SOT-363 DESCRIPTION This N Channel + P Channel MOSFET has been designed using advanced power trench process to optimize the RDS ON .


    Original     		OT-363 CJ7252KDW OT-363 2N7002K CJ502K PDF

    CJ1012

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate MOSFETS CJ1012 N-Channel Power MOSFET SOT-523 General Description This Single N-Channel MOSFET has been designed using advanced Power Trench process to optimize the RDS ON . 1. GATE


    Original     		OT-523 CJ1012 OT-523 600mA 250uA PDF

    V/AA3R

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 6N10 Power MOSFET 6.5 Amps, 100 Volts N-CHANNEL POWER MOSFET  1 DESCRIPTION SOT-223 The UTC 6N10 is an N-Channel enhancement mode power FET providing customers with excellent switching performance and minimum on-state resistance.


    Original     		OT-223 O-252 6N10L-TN3-T 6N10G-TN3-T 6N10L-TN3-R 6N10G-TN3-R 6N10L-AA3-R 6N10G-AA3-R QW-R502-486 V/AA3R PDF

    6N10G-AA3-R

    Abstract: 6n10g
    Text: UNISONIC TECHNOLOGIES CO., LTD 6N10 Preliminary Power MOSFET 6 Amps, 100 Volts N-CHANNEL POWER MOSFET „ 1 DESCRIPTION SOT-223 The UTC 6N10 is an N-Channel enhancement mode power FET providing customers with excellent switching performance and minimum on-state resistance.


    Original     		OT-223 O-252 O-252 OT-223 6N10L-TN3-R 6N10G-TN3-R QW-R502-486 6N10G-AA3-R 6n10g PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 6N10 Power MOSFET 6 Amps, 100 Volts N-CHANNEL POWER MOSFET „ 1 DESCRIPTION SOT-223 The UTC 6N10 is an N-Channel enhancement mode power FET providing customers with excellent switching performance and minimum on-state resistance.


    Original     		OT-223 O-252 6N10L-TN3-T 6N10G-TN3-T 6N10L-TN3-R 6N10G-TN3-R 6N10L-AA3-R 6N10G-AA3-R QW-R502-486. PDF

    CEP50N06

    Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
    Text: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223


    Original     		O-251/TO-252 O-220/TO-263 OT-23 OT-223 OT-89 2928-8J O-220FM CEP50N06 CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139 PDF

    NDT410EL

    Abstract: No abstract text available
    Text: N August 1996 NDT410EL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel logic level enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS


    Original     		NDT410EL NDT410EL PDF

    N1N20

    Abstract: 6772 sot 223 STN1N20
    Text: STN1N20 N-channel 200 V, 1.2 Ω, 1 A, SOT-223 MESH OVERLAY Power MOSFET Features • Type VDSS RDS on max ID STN1N20 200 V < 1.5 Ω 1A 4 100% avalanche tested 1 Application ■ 2 3 SOT-223 Switching applications Description This device is an N-channel Power MOSFET


    Original     		STN1N20 OT-223 OT-223 N1N20 6772 sot 223 STN1N20 PDF

    Untitled

    Abstract: No abstract text available
    Text: February 2009 NDT451AN N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very


    Original     		NDT451AN NDT451AN PDF

    NDT453N

    Abstract: No abstract text available
    Text: September 1996 NDT453N N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very


    Original     		NDT453N NDT453N PDF

    NDT451AN

    Abstract: No abstract text available
    Text: July 1996 NDT451AN N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very


    Original     		NDT451AN NDT451AN PDF

    NDT453N

    Abstract: 201A3 CBVK741B019 F63TNR F852 PN2222A
    Text: September 1996 NDT453N N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very


    Original     		NDT453N NDT453N 201A3 CBVK741B019 F63TNR F852 PN2222A PDF

    CBVK741B019

    Abstract: F63TNR F852 NDT451AN PN2222A
    Text: July 1996 NDT451AN N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very


    Original     		NDT451AN CBVK741B019 F63TNR F852 NDT451AN PN2222A PDF

    NDT451AN

    Abstract: No abstract text available
    Text: February 2009 NDT451AN N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very


    Original     		NDT451AN NDT451AN PDF

    Power MOSFET N-Channel sot-23

    Abstract: SOT-23 1g SOT23 1G
    Text: CHENMKO ENTERPRISE CO.,LTD CHM1592PT SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 500 mAmpere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SOT-23 FEATURE * N-Channel Enhancement


    Original     		CHM1592PT OT-23 Power MOSFET N-Channel sot-23 SOT-23 1g SOT23 1G PDF

    NDT453N

    Abstract: No abstract text available
    Text: N September 1996 NDT453N N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored


    Original     		NDT453N NDT453N PDF

    NDT3055

    Abstract: No abstract text available
    Text: N September 1996 NDT3055 N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored


    Original     		NDT3055 NDT3055 PDF

    CJ125

    Abstract: NDT451N
    Text: N September 1996 NDT451N N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored


    Original     		NDT451N NDT451N CJ125 PDF

    NDT014

    Abstract: No abstract text available
    Text: N September 1996 NDT014 N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored


    Original     		NDT014 NDT014 PDF

    NDT3055L

    Abstract: TR NDT3055L
    Text: N September 1996 NDT3055L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features Power SOT logic level N-Channel enhancement mode field effect transistors are produced using National's proprietary, high cell density, DMOS


    Original     		NDT3055L NDT3055L TR NDT3055L PDF

    FZ 300 R 06 KL

    Abstract: 34B SOT NDT410EL L-253
    Text: August 1 996 National Semiconductor" N DT410EL N-Channel Logic Level Enhancement M ode Field Effect Transistor Features General Description Power SOT N-Channel logic level enhancem ent mode power field effect transistors are produced using N ational's proprietary, high cell density, DMOS


    OCR Scan     		NDT410EL NDT410EL OT-223 FZ 300 R 06 KL 34B SOT L-253 PDF

    NDT453N

    Abstract: No abstract text available
    Text: September 1996 National Semiconductor" N D T453N N-Channel Enhancement M ode Field Effect Transistor General Description Features Power SOT N-Channel enhancem ent m ode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		NDT453N NDT453N OT-223 PDF

    Untitled

    Abstract: No abstract text available
    Text: September 1996 National Semiconductor NDT453N N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancem ent m ode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		NDT453N OT-223 34bTb74 PDF

    Untitled

    Abstract: No abstract text available
    Text: September 1996 National Semiconductor NDT451N N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancem ent m ode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		NDT451N NDT451N OT-223 34bTb74 PDF