8j50

Abstract: l851 b ed date sheet
Contextual Info: A TROMPETER DRAWING AND PART NO. RE QU ES T T IT L E H NO DRAWING A D - P L Z O / C J X Q - K ! ' • ß J S ’O REV ft DRAWING NO. A S S IG N E D VERBAL DATE A S SIG N ED ZO O S'-0 9 8 2 DESCRIPTiO N OR S H IP W OR K OR D ER DATE ■ « « t b o n ic » , i n c

15n50

Abstract: MTM15N35 SN45 2657 mosFET 15n45 MTM15N50 SN45 diode MTM15N45 AN569 0165R
Contextual Info: MOTOROLA SC X S T R S /R MOTOROLA m e F D I b3b?as4 o m a a a o a | _ m SEMICONDUCTOR TECHNICAL DATA M TM 15N45 MTM15IM50 Designer's Data Sheet P o w e r Field E ffe c t T ra n sisto r N-Channel Enhancem ent-M ode S ilico n G ate TM O S B TM O S POW ER FETs

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

Contextual Info: >kiyjxiyvi al-Output Positive and Negative , DC-DC C o n v e r t e r for CCD a n d LCD _F e a t u r e s The MAX685 DC-DC converter provides low-noise dual outputs for powering CCD imaging devices and LCDs. This device uses a single inductor to provide indepen­

p12n60c3

Abstract: p12n60 P12N60C T1S12 HRP1560 s12n S12N60C3 HGTP12N60 S12N60C
Contextual Info: HARRIS HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S S E M I C O N D U C T O R 24A, 600V, UFS Series N-Chan nel IG BTs Jan ua ry 1997 F ea tu res Description • 24A, 600V at Tc = 25 °C The HGTP12N60C3, H G T1S12N60C3 and HG T1S12N60C3S are MOS gated high voltage switching devices combining the

2T6551

Abstract: information applikation information applikation mikroelektronik mikroelektronik Heft KD 605 KT825 transistoren KT 960 A Mikroelektronik Information Applikation KT827 mikroelektronik DDR
Contextual Info: im S l^ is B le l- c t s n o r iil- c Information Informations- und Applikationshefte „ M IK R O E L E K T R O N IK " Bisher ersch ien en : Heft Heft Heft Heft Heft Heft Heft 1: 2: 3: 4: 5: 6: 7: A 210 und 211 A 301 A 290 A 202 A 244 und A281 Importbauelem ente RGW „IS"

MOSFET ior 144

Abstract: IRFM044 IRFM044D
Contextual Info: Data Sheet No. PD-9.708A INTERNATIONAL RECTIFIER IO R AVALANCHE ENERGY RATED AND dv/dt RATED HEXFET TRANSISTOR IRFMQ44 N-CHANNEL 60 Volt, 0.040 Ohm HEXFET Product Summary The HEXFET® technology is the key to International Rectifier's advanced line of power MOSFET transistors.

Contextual Info: M ODEL G A N D J STYLES NTC Thermistors Surface Mount Chips FEATURES • Wraparound terminations • Allows for design flexibility for use with hybrid circuitry • High-density monolithic ceramic construction • Available in 8mm tape and reel • Model J chips are thermistor dies with wraparound

burr-brown 700

Abstract: MPY634SL MPY634AL MPY634BL
Contextual Info: B U R R —BROUN CORP SSE D • r - 7 3 '2 9 B U R R -B R O W N c 17B13L5 DOlbblB S MPY634L ■B B É LCC Wide Bandwidth PRECISION ANALOG MULTIPLIER FEATURES APPLICATIONS • • • • • • • • • • WIDE BANDWIDTH: 10MHz TYP ±0 .5% MAX FOUR-QUADRANT ERROR

Contextual Info: M O D EL J N TC Therm istors S u r f a c e M ount C h ip F E A TU R E S Model J chips are thermistor dies with wraparound • Wraparound terminations terminations of fired-on platinum/palladium/silver • Allows for design flexibility for use with hybrid circuitry

20N60C3DR

Contextual Info: X HGTG20N60C3DR M Aß , 40A, 600V, Rugged, UFS Series N-C hannel IGBT w ith A nti-Parallel U ltrafast Diode November 1996 Features Description • 40A, 600V at T c = 25°C This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as

74CBT3245A

Abstract: 14H6 14K5 14H8 TC R508 10N3 14H7 FR-134 TP1254 10J7
Contextual Info: A B C D E F G H J K L M N P Q DRAWING NUMBER DATE +3.3_MED COMPACTPCI CONNECTOR INTERFACE +5_MED STREAM 16/4/1999 EC 9E7 9F9 ISSUE 9 AD 31:0 CBEN(3:0) 2L6 8 2L7 INTAN PCI_REQN AD30 AD26 CBEN_3 AD21 AD18 2M5 7 2M5 DEVSELN SERRN AD12 AD7 AD1 9C7 6 2L7 3C5 9C2

D53C1

Abstract: clarostat POTENTIOMETER dual 500k RV4 CLAROSTAT marking 53C AE30 spst clarostat POTENTIOMETER 380c1 5k clarostat POTENTIOMETER DPST-3A-125 clarostat 53c1 RV4NAYSD500A
Contextual Info: S e r ie s 380, 53/RV 4, 485 2 Watt, Conductive Plastic Potentiom eter S e r ie s 3 80, 5 3/RV4. 485, E le c tr ic a l S p e c it ic a t io n s Resistance Range 50i2 to 5 Megohms, linear. 250Q to 2.5 Megohms, tapered. 485 series only, 100i2 to 2.5 Megohm, linear.

6800 intel microprocessor pin diagram

Abstract: 8088 intel microprocessor pin diagram 8048 intel microprocessor pin diagram 68008 microprocessor motorola 68008 intel 8088 microprocessor cb amplifier cs 1000 dac interfaces with microprocessor 8088 EF9370 intel 8048 datasheet
Contextual Info: £ = 7 S G S -T H O M S O N ^ 7 # 5 [L K g ïïIF M O û S T S 9 3 7 0 HMOS2 - SINGLE CHIP COLOR PALETTE • ON CHIP COLOR LOOK-UP TABLE ■ 4096 COLOR PALETTE 16 colors selected from 4096 . ON-CHIP THREE 4-BIT RESOLUTION VIDEO DACs ■ DOT RATE UP TO 45 M EGADOTS PER SE­

volum

Abstract: LMC835
Contextual Info: LMC1982 National Semiconductor LMC1982 Digitally-Controlled Stereo Tone and Volume Circuit with Two Selectable Stereo Inputs • Enhanced stereo function General Description The LM C1982 is a m onolithic integrated circuit that provides volum e, balance, tone bass and treble , enhanced stereo,

6120* PDP-8 microprocessor

Abstract: tda 7560 4 x 35 W Tda 6275 dx 400 harris 6120 dxbus TDA 7240 equivalent 6120* harris TDA 7240 amplifier harris dx10
Contextual Info: 4-2 Product Information 4-3 E ri /iP & PERIPHERALS Product Index 4-1 CMOS Microprocessor and Peripherals Product Index Page CMOS 1 2 -B IT M IC R O PR O C ES SO R D A T A SH E ETS H D -6 1 2 0 H D -6 1 2 1 H M -6 1 0 0 H D -6 1 01 12 Bit High Performance Microprocessor

Contextual Info: 10 33780 -OPTIONAL SCREWS 4 CIRCUIT SHOWN 8 .8 4 .3 4 8 TY P.- 7 / f A 2 X X SCREW 6 2 (X X ) S C R E W , # 6 - 3 2 , P H IL -S L O T 5 2 (X X ) SC R EW , # 6 -3 2 , S LO T T E D W /W A S H E R , # 6 - 3 2 , P H I - S L O T 4 2 (X X ) S C R E W , # 6 - 3 2 , P H IL -S L O T

8J5003

Contextual Info: A COMPANY MODEL J NTC Therm istors OF JJA LE Surface Mount Chip FE A T U R E S • W raparound terminations Model J chips are therm istor dies with wraparound term inations of fired-on platinum /palladium/silver for mounting directly to the bonding pads of a hybrid

z 409

Abstract: 5k ohm potentiometer trimmer pot
Contextual Info: S eries 408 Sealed Potentiometer Description 1/2 in. sq. 0.5 Watt The series 408 anil 409 are high-performance potentiometers, designed to meet wave soldering applications for mounting to PC boards. S eries 409 Sealed Potentiometer 1/2 in. sq. 1.0 Watt 'AW

Lambda lss

Abstract: LSS-37-12 LST-39-144 Lambda lss-36-5 LSS-39-28 lss-38-24 LSS-34-15 ISS362 LSS-37-24 LSS-35-24
Contextual Info: Part I - AC-to-DC Power Supplies LAM BDA'S LS SERIES High Density, Low Cost Power Supplies Space is always at a premium in electronic applications, and form factor plays an important role in utilization of that space. Lambda's LS Series provides single and

N 8J5

Contextual Info: E nw igig @ AWT0908 S6 TX POWER MMIC Advanced Product Information Rev 0 900 MHz Band GSM GaAs Power Amplifier 1C DESCRIPTION The AWT0908 is a 3 stage monolithic Power Amplifier 1C suited for GSM cellular telephone Applications FEATURES • High Output Power

JWM21

Abstract: JWL21 JW22 D211 18-gg 6 POLE 16 amp ROCKER SWITCH t 125 16a 250v JW11
Contextual Info: | HK TV-RATED/SNAP-IN MOUNT/ROCKERS & PUSHBUTTONS Dl! Industry’s first molded rocker and pushbutton with TV rating. Designed to handle large inrush current: M models qualify for TV -5 rating and L models for TV-8 rating. Special actuator block design for.

D408N

Abstract: 24-A4 5k rotary potentiometer rotary potentiometer switch dual 50k 500K2
Contextual Info: Description The series 408 and 409 are high-performance potentiometers, designed to meet wave soldering applications for mounting to PC boards. They are also available with S.P.S.T. or S.P.D.T. rotary switch modules, S.P.D.T. push-pull or momentary switch modules and/or potentiometer modules in

AWT0908

Abstract: AWT0908S6 SSOP-28
Contextual Info: AWT0908 S6 TX POWER MMIC Advanced Product Information Rev 0 900 MHz Band GSM GaAs Power Amplifier 1C DESCRIPTION The AWT0908 is a 3 stage monolithic Power Amplifier 1C suited for GSM cellular telephone Applications FEATURES • High Output Power • High Efficiency