N CHANNEL MOSFET 1400 V Search Results

N CHANNEL MOSFET 1400 V Result Highlights (5)

Part	Manufacturer	Description
PQU650-12P	Murata Manufacturing Co Ltd	AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB
XPJ1R004PB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL
TK4K1A60F	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS

N CHANNEL MOSFET 1400 V Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
9n160g Abstract: IXBH 9N160G D-68623 ixbh9n160g 9N140G Text: High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH 9N140G IXBH 9N160G N-Channel, Enhancement Mode MOSFET compatible C VCES IC25 VCE sat tfi = = = = 1400/1600 V 9A 4.9 V typ. 70 ns TO-247 AD G G C E C (TAB) E G = Gate, E = Emitter, Preliminary Data	Original	9N140G 9N160G O-247 9N140G 9-140/160G 9n160g IXBH 9N160G D-68623 ixbh9n160g	PDF
MRF6V10010NR4 Abstract: AN1955 d2460 A03TK Text: Freescale Semiconductor Technical Data Document Number: MRF6V10010N Rev. 3, 7/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF6V10010NR4 RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for	Original	MRF6V10010N MRF6V10010NR4 MRF6V10010NR4 AN1955 d2460 A03TK	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6V10010N Rev. 3, 7/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF6V10010NR4 RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for	Original	MRF6V10010N MRF6V10010NR4	PDF
F35V Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6V10010N Rev. 1, 2/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6V10010NR4 RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for	Original	MRF6V10010N MRF6V10010NR4 MRF6V10010N F35V	PDF
transistor equivalent table c101 Abstract: KEMET C1206C104K5RACTR CRCW12063301FKEA MRF6V10010N A03TKlc C1206C104K5RACTR Text: Freescale Semiconductor Technical Data Document Number: MRF6V10010N Rev. 0, 6/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6V10010NR4 RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for	Original	MRF6V10010N MRF6V10010NR4 MRF6V10010N transistor equivalent table c101 KEMET C1206C104K5RACTR CRCW12063301FKEA A03TKlc C1206C104K5RACTR	PDF
NX3008NBKMB Abstract: BSS138BK BSS84AKS PMV48XP BSH201 2N7002PW nx2301 PMPB27XP PMF170XP 2N7002PS Text: Small-signal MOSFET Selection Guide Broad selection of small-signal MOSFETs for a wide range of applications Our advanced MOSFET solutions deliver the flexibility and performance that today´s market demands. Choose from a wide range of general-purpose MOSFET solutions, available in a variety	Original	OT223 DFN1006B-3, AEC-Q101 Q3/2012 NX3008NBKMB BSS138BK BSS84AKS PMV48XP BSH201 2N7002PW nx2301 PMPB27XP PMF170XP 2N7002PS	PDF
TH 2190 HOT Transistor Abstract: No abstract text available Text: Preliminary Data Sheet March 2004 AGR21180EF 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	AGR21180EF TH 2190 HOT Transistor	PDF
sm 4500 Abstract: No abstract text available Text: Preliminary Data Sheet February 2004 AGR21125E 125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access	Original	AGR21125E AGR21125EU AGR21125EF AGR21125End sm 4500	PDF
list of P channel power mosfet Abstract: si4563 SI4563DY Text: Si4563DY New Product Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.016 @ VGS = 10 V 8 0.019 @ VGS = 4.5 V 8 VDS (V) N Channel N-Channel 40 P Channel P-Channel –40 40 D TrenchFETr Power MOSFET D 100% Rg Tested	Original	Si4563DY Si4563DY-T1--E3 52243--Rev. 24-Oct-05 list of P channel power mosfet si4563	PDF
TH 2190 HOT Transistor Abstract: TH 2190 mosfet AGR21180EF JESD22-C101A Text: Preliminary Data Sheet April 2004 AGR21180EF 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	AGR21180EF AGR21180EF DS04-167RFPP DS04-124RFPP) TH 2190 HOT Transistor TH 2190 mosfet JESD22-C101A	PDF
Untitled Abstract: No abstract text available Text: SPICE Device Model Si4559EY Dual Enhancement-Mode MOSFETS N- and P- Channel Characteristics • N- and P- channel Vertical DMOS • Macro-Model (Subcircuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range	Original	Si4559EY	PDF
C15B material sheet Abstract: C14A AGR21125E AGR21125EF AGR21125EU C10A C11A C12A C12D JESD22-C101A Text: Preliminary Data Sheet April 2004 AGR21125E 125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access	Original	AGR21125E AGR21125E AGR21125EU AGR21125EF DS04-166RFPP DS04-108RFPP) C15B material sheet C14A AGR21125EF AGR21125EU C10A C11A C12A C12D JESD22-C101A	PDF
2sk2642 Abstract: No abstract text available Text: 2SK2642-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220F15 High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±35V Guarantee Avalanche-proof 2.54 Applications Switching regulators UPS DC-DC converters	Original	2SK2642-01MR O-220F15 100ms 2sk2642	PDF
Si4949EY Abstract: No abstract text available Text: Si4949EY Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N-Channel 60 P-Channel –30 rDS(on) (W) ID (A) 0.055 @ VGS = 10 V "4.5 0.075 @ VGS = 4.5 V "3.9 0.053 @ VGS = –10 V "5.1 0.095 @ VGS = –4.5 V "3.8 D1 D1 S2 SO-8 S1 1 8 D1	Original	Si4949EY S-45847--Rev. 13-Nov-95	PDF

B1470 Abstract: K775 mitsubishi MOSFET F3005 FS20KM5 FS20KM-5 MAX240 MITSUBISHI MOSFET FS Text: MITSUBISHI Neh POWER MOSFET FS20KM-5 HIGH-SPEED SWITCHING USE FS20KM-5 OUTLINE DRAWING Dimensions in mm 1 0 ± 0 .3 • V d s s . 2 .8 ± 0 . 2 250V • rDS ON (MAX) . 0 .1 9 Q	OCR Scan	FS20KM-5 -220FN T0-220S, MAX240Â MAX60S O-220, O-220FN, O-220C, O-220S B1470 K775 mitsubishi MOSFET F3005 FS20KM5 FS20KM-5 MAX240 MITSUBISHI MOSFET FS	PDF
2sk mosfet Abstract: 2SK904 Text: 2SK904 SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-I SERIES lOutline Drawings • Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage ■Applications • Switching regulators	OCR Scan	2SK904 2sk mosfet 2SK904	PDF
Untitled Abstract: No abstract text available Text: 2SK1659-L.S SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET p • Features ^ ■ Outline Drawings • High speed sw itching • Low o n-resistance • N o secondary breakdow n • Low driving p o w er • High voltage ■ Applications • S w itch in g regulators	OCR Scan	2SK1659-L	PDF
2sk mosfet Abstract: 2SK903 Text: 2SK903 SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET • Features ■ O utline Drawings • High speed sw itching • Low on-resistance • No secondary breakdown • Low driving pow er • High voltage ■Applications • Sw itching regulators	OCR Scan	2SK903 2sk mosfet 2SK903	PDF
2SK1385-01 Abstract: n mosfet 1400 v Text: 2SK1385-01 SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F A P - I I S E R I E S lOutline Drawings • Features • High speed sw itching • Lo w on-resistance • No second ary breakdow n • Lo w driving p o w er • High voltage • V GSs = ± 3 0 V G uarantee	OCR Scan	2SK1385-01 A2-191 n mosfet 1400 v	PDF
cnc schematic Abstract: diode t87 LA 1385 ups electrical symbols 2SK1385-01 Text: 2SK1385-01 SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F A P -II S E R I E S lOutline Drawings • Features • High speed sw itching • Lo w on-resistance • No second ary breakdow n • Lo w driving p o w er • High voltage • V GSs = ± 3 0 V G uarantee	OCR Scan	2SK1385-01 A2-191 cnc schematic diode t87 LA 1385 ups electrical symbols	PDF
Untitled Abstract: No abstract text available Text: MOSFET MODULE SF150AA50 UL;E76102 M SF1 5 0 A A 5 0 is an isolated MOSFET module designed for fast switching applications of low voltage/high current. S F 1 5 0 A A 5 0 enable you to control high power with compact p a c k a g e .^ ^ 150A, VDSS= 500V Compact Package	OCR Scan	SF150AA50 E76102 112M3 Q00B24B	PDF
mosfet 2sk Abstract: No abstract text available Text: 2SK1217-01 SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F A P - I I S E R I E S lOutline Drawings • Features • High speed sw itching • Low o n-resistance • No secondary b reakd ow n • Low driving p ow er • High voltage • V GSs = ± 3 0 V G uarantee	OCR Scan	2SK1217-01 223A7T2 0D03017 mosfet 2sk	PDF
2sk1299 Abstract: 2SK1763 2SK1878 2sj177 2SJ295 2SK1579 TO220FM 2SJ244 2sj235 2SJ246 Text: HITACHI 5.7 Power Conversion 3 Power Management Switch for Battery Operating Equipment P channel MOSFET Vcc Load VCC (V) VDSS (V) lyp* No. I O IN - CM CM S~9 2SJ244 12— 24 30 2SJ246 24~40 60 2SJ24S Power management Switch circuit D-IV L Series Item Package	OCR Scan	2SJ244 2SJ246 2SJ245 2SJ317 2SJ298 2SJ300 2SJ299 2SJ278 2SJ279 2SJ290 2sk1299 2SK1763 2SK1878 2sj177 2SJ295 2SK1579 TO220FM 2SJ244 2sj235 2SJ246	PDF
2SK956 Abstract: 2sk956 equivalent 2sk mosfet 5UA10 mosfet 2sk 2SK95 Text: 2SK956 SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F -II SER IES • Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • Voss = ± 3 0 V Guarantee ■Applications • Switching regulators	OCR Scan	2SK956 2SK956 2sk956 equivalent 2sk mosfet 5UA10 mosfet 2sk 2SK95	PDF

N CHANNEL MOSFET 1400 V Search Results

N CHANNEL MOSFET 1400 V Result Highlights (5)

N CHANNEL MOSFET 1400 V Datasheets Context Search

9n160g

MRF6V10010NR4

Untitled

F35V

transistor equivalent table c101

NX3008NBKMB

TH 2190 HOT Transistor

sm 4500

list of P channel power mosfet

TH 2190 HOT Transistor

Untitled

C15B material sheet

2sk2642

Si4949EY

B1470

2sk mosfet

Untitled

2sk mosfet

2SK1385-01

cnc schematic

Untitled

mosfet 2sk

2sk1299

2SK956