Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    N CHANNEL MOSFET 45 W 10 V Search Results

    N CHANNEL MOSFET 45 W 10 V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    N CHANNEL MOSFET 45 W 10 V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    72632

    Abstract: SUM55N03-16P
    Text: SUM55N03-16P Vishay Siliconix New Product N-Channel 30-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.016 @ VGS = 10 V 55 0.024 @ VGS = 4.5 V 45 D D D D TrenchFETr Power MOSFET 175_C Junction Temperature PWM Optimized 100% Rg Tested


    Original     		PDF SUM55N03-16P O-263 SUM55N03-16P--E3 08-Apr-05 72632 SUM55N03-16P

    SUM45N25-58-E3

    Abstract: SUM45N25-58 sum45n25
    Text: SUM45N25-58 New Product Vishay Siliconix N-Channel 250-V D-S 175_C MOSFET FEATURES D TrenchFETr Power MOSFETS D 175_C Junction Temperature D New Low Thermal Resistance Package PRODUCT SUMMARY V(BR)DSS (V) 250 rDS(on) (W) ID (A) 0.058 @ VGS = 10 V 45 0.062 @ VGS = 6 V


    Original     		PDF SUM45N25-58 O-263 SUM45N25-58 S-51396--Rev. 25-Jul-05 SUM45N25-58-E3 sum45n25

    Untitled

    Abstract: No abstract text available
    Text: VFT30-28 VHF POWER MOSFET N-Channel Enhancement Mode DESCRIPTION: The VFT30-28 is Designed for General Purpose Class AB Power Amplifier Applications up to 175 MHz. PACKAGE STYLE .380 4L FLG B FEATURES: .112 x 45° A S • PG = 14 dB Typ. at 30 W /175MHz • 10:1 Load VSWR Capability


    Original     		PDF VFT30-28 VFT30-28 /175MHz

    SUB45N05-20L

    Abstract: SUP45N05-20L
    Text: SUP/SUB45N05-20L New Product Vishay Siliconix N-Channel 50-V D-S , 175_C MOSFET, Logic Level PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 0.018 @ VGS = 10 V 50 "45 a 0.020 @ VGS = 4.5 V D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S


    Original     		PDF SUP/SUB45N05-20L O-220AB O-263 SUB45N05-20L SUP45N05-20L O-220AB O-263) O-263 S-62982--Rev. 12-Jul-99 SUB45N05-20L SUP45N05-20L

    IAf630

    Abstract: sfn02804 RS630 BUZ73 sfn02204 SFN02814 tx134 sgsp567 SGSP367 2SK400
    Text: MOSFET Item Number Part Number Manufacturer V BR OSS (V) loss Max A) Po Max (W) ros (on) (Ohms) Toper Max Package Style N-Channel Enhancement-Type, (Cont'd) 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 810 600p 60n 60n 2.0 1.3 1.3 1.3 1.3 600p 600p


    Original     		PDF RRF620 2SK755 2SK782 TX124 IRFJ220 SFN02804 SFN02814 SFN204A3 YTF220 YTF620 IAf630 RS630 BUZ73 sfn02204 tx134 sgsp567 SGSP367 2SK400

    Untitled

    Abstract: No abstract text available
    Text: FM600TU-3A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com 6-PACK High Power MOSFET Module 300 Amperes/150 Volts A D F G G H K Q L P AB E AE J 7 B N P X (11 PLACES) Z AB AC R AD N L M 1 13 14 T W B A S AF U TC MEASURED


    Original     		PDF FM600TU-3A Amperes/150

    J964

    Abstract: No abstract text available
    Text: Data Sheet June 2004 AGR21045EF 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21045EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and


    Original     		PDF AGR21045EF J964

    Untitled

    Abstract: No abstract text available
    Text: FM600TU-2A Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 6-Pack High Power MOSFET Module 300 Amperes/100 Volts A D F G G Q H K P AB E AE J 7 B Z AB N P X (11 PLACES) L AC R AD N M L 1 13 14 T W B A S AF U TC MEASURED


    Original     		PDF FM600TU-2A Amperes/100

    Untitled

    Abstract: No abstract text available
    Text: FM600TU-3A Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 6-Pack High Power MOSFET Module 300 Amperes/150 Volts A D F G G Q H K P AB E AE J 7 B Z AB N P X (11 PLACES) L AC R AD N M L 1 13 14 T W B A S AF U TC MEASURED


    Original     		PDF FM600TU-3A Amperes/150

    power mosfet 80v 150a

    Abstract: rad7 n channel mosfet 500 mA 400 v
    Text: FM600TU-3A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com 6-Pack High Power MOSFET Module 300 Amperes/150 Volts A D F G G Q H K L P AB E N AE J 7 B Z AB AC P X (11 PLACES) L M R AD N 1 13 14 T W B A S AF 6 12 U


    Original     		PDF FM600TU-3A Amperes/150 power mosfet 80v 150a rad7 n channel mosfet 500 mA 400 v

    Untitled

    Abstract: No abstract text available
    Text: FM600TU-2A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com 6-Pack High Power MOSFET Module 300 Amperes/100 Volts A D F G G Q H K L P AB E N AE J 7 B Z AB AC P X (11 PLACES) L M R AD N 1 13 14 T W B A S AF 6 12 U


    Original     		PDF FM600TU-2A Amperes/100

    Untitled

    Abstract: No abstract text available
    Text: FM600TU-3A Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 6-Pack High Power MOSFET Module 300 Amperes/150 Volts A D F G G Q H K P AB E AE J 7 B Z AB N P X (11 PLACES) L AC R AD N M L 1 13 14 T W B A S AF U TC MEASURED


    Original     		PDF FM600TU-3A Amperes/150 MOS01

    N mosfet 100v 600A

    Abstract: No abstract text available
    Text: FM600TU-2A Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 6-Pack High Power MOSFET Module 300 Amperes/100 Volts A D F G G Q H K P AB E AE J 7 B Z AB N P X (11 PLACES) L AC R AD N M L 1 13 14 T W B A S AF U TC MEASURED


    Original     		PDF FM600TU-2A Amperes/100 N mosfet 100v 600A

    Untitled

    Abstract: No abstract text available
    Text: FM600TU-2A Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 6-Pack High Power MOSFET Module 300 Amperes/100 Volts A D G F G Q N J H M L K X (11 PLACES) L P R 7 B E 1 W T B A S 12 TC MEASURED POINT 6 Y Q K M M X V U C C


    Original     		PDF FM600TU-2A Amperes/100

    AGR21045E

    Abstract: AGR21045EF AGR21045EU JESD22-C101A 100B8 Agere Systems
    Text: Preliminary Data Sheet April 2004 AGR21045E 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original     		PDF AGR21045E AGR21045E AGR21045EU AGR21045EF DS04-164RFPP DS04-037RFPP) AGR21045EF AGR21045EU JESD22-C101A 100B8 Agere Systems

    3000 watts ups circuit diagram

    Abstract: No abstract text available
    Text: FM600TU-3A Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 6-Pack High Power MOSFET Module 300 Amperes/150 Volts A D G F G Q N J H M L K X (11 PLACES) L P R 7 B E 1 W T B A S 12 TC MEASURED POINT 6 Y Q K M M X V U C C


    Original     		PDF FM600TU-3A Amperes/150 3000 watts ups circuit diagram

    TN6Q04

    Abstract: 2sk4100 2SJ585 2SK4100ls 2SK4101LS INV250 2SK4096LS 2SJ406 2SK3745LS 2SJ584
    Text: SANYO Power Transistors Bipolar Transistor Series & Schottky Barrier Diode Series CONTENTS 2ĝ5 ŝTO-220MF Package 6 ŝTO-220FI Package ŝLow-saturation Voltage Transistors 7 ŝTO-220FI5H Package 14 ŝHorizontal Deflection Output Use 8 ŝTO-220ML Package 15


    Original     		PDF O-220MF O-220FI O-220FI5H O-220ML O-126 O-126LP O-126ML O-220FI O-220FI5H-HB O-220FI5H-HA TN6Q04 2sk4100 2SJ585 2SK4100ls 2SK4101LS INV250 2SK4096LS 2SJ406 2SK3745LS 2SJ584

    "MOSFET Module"

    Abstract: E80276 FM600TU-3A "MOSFET Module" fm600tu-3a PU90
    Text: MITSUBISHI <MOSFET MODULE> FM600TU-3A HIGH POWER SWITCHING USE INSULATED PACKAGE FM600TU-3A ● ID rms . 300A ● VDSS . 150V ● Insulated


    Original     		PDF FM600TU-3A E80276 E80271 "MOSFET Module" E80276 FM600TU-3A "MOSFET Module" fm600tu-3a PU90

    "MOSFET Module"

    Abstract: E80276 FM600TU-2A
    Text: MITSUBISHI <MOSFET MODULE> FM600TU-2A HIGH POWER SWITCHING USE INSULATED PACKAGE FM600TU-2A ● ID rms . 300A ● VDSS . 100V ● Insulated


    Original     		PDF FM600TU-2A E80276 E80271 "MOSFET Module" E80276 FM600TU-2A

    sm 4500

    Abstract: No abstract text available
    Text: Preliminary Data Sheet February 2004 AGR21125E 125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access


    Original     		PDF AGR21125E AGR21125EU AGR21125EF AGR21125End sm 4500

    Untitled

    Abstract: No abstract text available
    Text: SMB120 Nine-Channel DC/DC Digitally Programmable System Power Manager FEATURES & APPLICATIONS Preliminary information INTRODUCTION • Digital programming of all major parameters via I2C interface and non-volatile memory o Output voltage set point o Output power-up/down sequencing


    Original     		PDF SMB120

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet No. PD 96941 IRIS-F6454R Features INTEGRATED SWITCHER • Oscillator is provided on the monolithic control with adopting On-ChipTrimming technology. • Small temperature characteristics variation by adopting a comparator to compensate for temperature on the control part.


    Original     		PDF IRIS-F6454R 100uA F6454R 4B-E01515A

    Amp. mosfet 1000 watt

    Abstract: PAL 007 a MOSFET PAL 007 E MOSFET ultra low igss pA ALD110800 ALD110804 ALD110804PCL ALD110804SCL ALD110904 ALD110904PAL
    Text: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD110804/ALD110904 QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® VGS th = +0.40V MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION APPLICATIONS ALD110804/ALD110904 are monolithic quad/dual enhancement mode NChannel MOSFETS matched at the factory using ALD’s proven EPAD®


    Original     		PDF ALD110804/ALD110904 ALD110804/ALD110904 Amp. mosfet 1000 watt PAL 007 a MOSFET PAL 007 E MOSFET ultra low igss pA ALD110800 ALD110804 ALD110804PCL ALD110804SCL ALD110904 ALD110904PAL

    SMD R5D diode

    Abstract: Zener diode smd marking code C24 smd MARKING r5b marking code R38 SMD Transistor smd marking code r55 R5C MARKING CODE SOT23 SMD r2f smd marking R5D SMD code R5D SMD r5d
    Text: SMB120 Nine-Channel DC/DC Digitally Programmable System Power Manager FEATURES & APPLICATIONS Preliminary information INTRODUCTION • Digital programming of all major parameters via I2C interface and non-volatile memory o Output voltage set point o Output power-up/down sequencing


    Original     		PDF SMB120 SMD R5D diode Zener diode smd marking code C24 smd MARKING r5b marking code R38 SMD Transistor smd marking code r55 R5C MARKING CODE SOT23 SMD r2f smd marking R5D SMD code R5D SMD r5d