A12 marking
Abstract: A12S MARKING A12 SOT-23 n-channel SOT-89 P-channel A12 s M/TOREX MARKING RULE
Text: XP13/15/16 Series •MARKING RULE ① Represents channel and product group MARK CHANNEL/PRODUCT GROUP ●XP13x Series 1 2 3 4 5 ①②③ N-Channel, Single P-Channel, Single N-Channel, Dual P-Channel, Dual N-Channel, P-Channel, Complementary ②,③ Represents Product number
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XP13/15/16
XP13x
XP131A*
XP132A*
XP133A*
XP134A*
XP135A*
XP15x
OT-23
XP16x
A12 marking
A12S
MARKING A12 SOT-23
n-channel SOT-89
P-channel
A12 s
M/TOREX MARKING RULE
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PDF
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MOSFET P-channel SOT-23
Abstract: Power MOSFET N-Channel sot-23 CMPDM7590 C759 CMPDM3590 C359 sot-23 P-Channel MOSFET MOSFET P channel SOT-23 P-Channel SOT-23 Power MOSFET
Text: Central CMPDM3590 N-CH CMPDM7590 P-CH TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPDM3590 and CMPDM7590 are complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs
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CMPDM3590
CMPDM7590
CMPDM3590
OT-23
CMPDM3590:
CMPDM7590:
200mA
MOSFET P-channel SOT-23
Power MOSFET N-Channel sot-23
C759
C359
sot-23 P-Channel MOSFET
MOSFET P channel SOT-23
P-Channel SOT-23 Power MOSFET
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PDF
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BSR56
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BSR56; BSR57; BSR58 N-channel FETs Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel FETs BSR56; BSR57; BSR58 DESCRIPTION Symmetrical silicon n-channel
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Original
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BSR56;
BSR57;
BSR58
MAM385
BSR56
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PDF
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MBK288
Abstract: PMBF4393 PMBF4391 PMBF4392
Text: DISCRETE SEMICONDUCTORS DATA SHEET PMBF4391; PMBF4392; PMBF4393 N-channel FETs Product specification File under Discrete Semiconductors, SC07 April 1995 Philips Semiconductors Product specification PMBF4391; PMBF4392; PMBF4393 N-channel FETs DESCRIPTION Symmetrical silicon n-channel
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Original
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PMBF4391;
PMBF4392;
PMBF4393
MAM385
MBK288
PMBF4393
PMBF4391
PMBF4392
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PDF
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BSR58
Abstract: BSR56 BSR57 sot23 marking code
Text: DISCRETE SEMICONDUCTORS DATA SHEET BSR56; BSR57; BSR58 N-channel FETs Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel FETs BSR56; BSR57; BSR58 DESCRIPTION Symmetrical silicon n-channel
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Original
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BSR56;
BSR57;
BSR58
MAM385
BSR58
BSR56
BSR57
sot23 marking code
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PDF
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PMBF4391
Abstract: PMBF4392 PMBF4393 MBK288
Text: DISCRETE SEMICONDUCTORS DATA SHEET PMBF4391; PMBF4392; PMBF4393 N-channel FETs Product specification April 1995 NXP Semiconductors Product specification PMBF4391; PMBF4392; PMBF4393 N-channel FETs DESCRIPTION Symmetrical silicon n-channel depletion type junction field-effect
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Original
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PMBF4391;
PMBF4392;
PMBF4393
MAM385
R77/02/9
PMBF4391
PMBF4392
PMBF4393
MBK288
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PDF
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BF511
Abstract: Bf513
Text: DISCRETE SEMICONDUCTORS DAT BF510 to 513 N-channel silicon field-effect transistors Product specification December 1997 NXP Semiconductors Product specification N-channel silicon field-effect transistors DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect
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BF510
BF510)
BF511)
BF512)
BF513)
BF510
R77/02/pp9
BF511
Bf513
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PDF
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mosfet vgs 5v
Abstract: mosfet vgs 5v SOT23 MOSFET 2KV MOSFET SOT-23 C7003 VGS-12V MARKING CODE 24 TRANSISTOR mosfet low vgs MARKING CODE 16 transistor sot23 10mhz mosfet
Text: CMPDM7003 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPDM7003 is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed
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Original
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CMPDM7003
CMPDM7003
C7003
OT-23
115mA
200mA
24-July
mosfet vgs 5v
mosfet vgs 5v SOT23
MOSFET 2KV
MOSFET SOT-23
C7003
VGS-12V
MARKING CODE 24 TRANSISTOR
mosfet low vgs
MARKING CODE 16 transistor sot23
10mhz mosfet
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PDF
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Bft46
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFT46 N-channel silicon FET Product specification December 1997 NXP Semiconductors Product specification N-channel silicon FET BFT46 DESCRIPTION Symmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic
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Original
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BFT46
MAM385
R77/02/pp11
Bft46
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PDF
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BF510
Abstract: BF511 BF512 BF513
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF510 to 513 N-channel silicon field-effect transistors Product specification December 1997 NXP Semiconductors Product specification N-channel silicon field-effect transistors DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect
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Original
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BF510
BF510)
BF511)
BF512)
BF513)
R77/02/pp9
BF511
BF512
BF513
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PDF
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CRS15
Abstract: BFT46 fet junction n-channel transistor FET MARKING CODE MARKING CODE FET MDA267 Silicon N-Channel Junction FET sot23 Philips fet SOT23 code marking MDA274 MARKING m3p
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFT46 N-channel silicon FET Product specification File under Discrete Semiconductors, SC07 December 1997 Philips Semiconductors Product specification N-channel silicon FET BFT46 DESCRIPTION Symmetrical n-channel silicon epitaxial planar junction field-effect
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Original
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BFT46
MAM385
CRS15
BFT46
fet junction n-channel transistor
FET MARKING CODE
MARKING CODE FET
MDA267
Silicon N-Channel Junction FET sot23
Philips fet SOT23 code marking
MDA274
MARKING m3p
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PDF
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Untitled
Abstract: No abstract text available
Text: MAX1614 High-Side, n-Channel MOSFET Switch Driver LE AVAILAB _General Description The MAX1614 drives high-side, n-channel power MOSFETs to provide battery power-switching functions in portable equipment. The n-channel power MOSFETs typically have
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MAX1614
MAX1614
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PDF
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CRS15
Abstract: BFT46
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFT46 N-channel silicon FET Product specification December 1997 NXP Semiconductors Product specification N-channel silicon FET BFT46 DESCRIPTION Symmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic
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Original
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BFT46
MAM385
R77/02/pp11
CRS15
BFT46
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PDF
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12w SOT 23 package marking code
Abstract: 12w marking code sot 23 LTC1407A-1 LTC2351I-12 ltc2351-12 32-PIN LTC2351C-12 LTC2351H-12 LTC2351HUH-12 LTC1609
Text: LTC2351-12 6 Channel, 12-Bit, 1.5Msps Simultaneous Sampling ADC With Shutdown DESCRIPTION FEATURES n n n n n n n n n n n n n 1.5Msps ADC with 6 Simultaneously Sampled Differential Inputs 250ksps Throughput per Channel 72dB SINAD Low Power Dissipation: 16.5mW
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LTC2351-12
12-Bit,
250ksps
32-Pin
LTC1666/LTC1667/
LTC1668
12-/14-/16-Bit,
50Msps
LT1460-2
12w SOT 23 package marking code
12w marking code sot 23
LTC1407A-1
LTC2351I-12
ltc2351-12
32-PIN
LTC2351C-12
LTC2351H-12
LTC2351HUH-12
LTC1609
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PDF
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LTC2351H-14
Abstract: 32-PIN LTC2351-14 LTC2351C-14 LTC2351CUH-14 LTC2351HUH-14 LTC2351I-14 LTC2351IUH-14 Marking code 12w SOT-23
Text: LTC2351-14 6-Channel, 14-Bit, 1.5Msps Simultaneous Sampling ADC with Shutdown DESCRIPTION FEATURES n n n n n n n n n n n n n 1.5Msps ADC with Six Simultaneously Sampled Differential Inputs 250ksps Throughput per Channel 75dB SINAD Low Power Dissipation: 16.5mW
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Original
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LTC2351-14
14-Bit,
250ksps
32-Pin
LTC1666/LTC1667
LTC1668
12-/14-/16-Bit,
50Msps
LT1460-2
LTC2351H-14
32-PIN
LTC2351-14
LTC2351C-14
LTC2351CUH-14
LTC2351HUH-14
LTC2351I-14
LTC2351IUH-14
Marking code 12w SOT-23
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PDF
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFR30; BFR31 N-channel field-effect transistors Product specification Supersedes data of April 1991 1997 Dec 05 NXP Semiconductors Product specification N-channel field-effect transistors BFR30; BFR31 DESCRIPTION Planar epitaxial symmetrical junction N-channel
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BFR30;
BFR31
MAM385
BFR30:
BFR31:
R77/02/pp13
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PDF
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MAX1614EUA
Abstract: MAX1614
Text: 19-1176; Rev 0; 12/96 High-Side, N-Channel MOSFET Switch Driver _Features The MAX1614 drives high-side, N-channel power MOSFETs to provide battery power-switching functions in portable equipment. N-channel power MOSFETs typically have
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Original
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MAX1614
21-0036D
MAX1614EUA
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PDF
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Untitled
Abstract: No abstract text available
Text: MAX1614 High-Side, n-Channel MOSFET Switch Driver LE AVAILAB _General Description _Features The MAX1614 drives high-side, n-channel power MOSFETs to provide battery power-switching functions in portable equipment. The n-channel power MOSFETs typically have
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Original
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MAX1614
MAX1614
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PDF
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12v battery protection from deep discharge
Abstract: MAX1614 MAX1614EUA
Text: 19-1176; Rev 0; 12/96 High-Side, N-Channel MOSFET Switch Driver _Features The MAX1614 drives high-side, N-channel power MOSFETs to provide battery power-switching functions in portable equipment. N-channel power MOSFETs typically have
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Original
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MAX1614
21-0036D
12v battery protection from deep discharge
MAX1614EUA
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PDF
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702 mosfet
Abstract: code 702 MARKING CODE 702 702 TRANSISTOR sot-23 702 sot 23 RG 702 Diode 2N7002 MARKING 702 marking 702 sot23 SOT23 transistor 702 702 SOT-23
Text: Central 2N7002 TM Semiconductor Corp. N-CHANNEL ENHANCEMENT-MODE MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N7002 type is a N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications.
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2N7002
2N7002
OT-23
200mA
26-September
702 mosfet
code 702
MARKING CODE 702
702 TRANSISTOR sot-23
702 sot 23
RG 702 Diode
2N7002 MARKING 702
marking 702 sot23
SOT23 transistor 702
702 SOT-23
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PDF
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marking code SS SOT23 MOSFET DRIVER
Abstract: marking code SS SOT23 transistor
Text: Central CMPDM7002A Semiconductor Corp. SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPDM7002A is special version of the 2N7002 Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel
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OCR Scan
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CMPDM7002A
2N7002
C702A
OT-23
20-February
CMPDM7002A
OT-23
marking code SS SOT23 MOSFET DRIVER
marking code SS SOT23 transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: t.bSB'm DOSSfllO b74 • APX PMBF170 N AUER PHILIPS/DISCRETE b7E D _ J \ _ N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a SOT23 envelope. Designed fo r use as a
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OCR Scan
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PMBF170
bb53T31
00ES81E
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PDF
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z418.2dpf.s20v
Abstract: S/sot-23 MARKING CODE 70.2
Text: Central 2 N 7 00 2 Sem iconductor Corp. N-CHANNEL ENHANCEMENT-MODE MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N7002 type is a N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications.
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OCR Scan
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OT-23
2N7002
500mA
500mA,
200mA
z418.2dpf.s20v
S/sot-23 MARKING CODE 70.2
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PDF
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Untitled
Abstract: No abstract text available
Text: Centrali TM CMPDM7002A Semiconductor Corp. SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEM ICO NDUCTOR CMPDM7002A is special version of the 2N7002 Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel
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OCR Scan
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CMPDM7002A
2N7002
C702A
CP324
20-February
CMPDM7002A
OT-23
OT-23
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PDF
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