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    N MOS 100V 100A Search Results

    N MOS 100V 100A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    N MOS 100V 100A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    APT10M11LVR

    Abstract: No abstract text available
    Text: APT10M11LVR 0.011Ω 100V 100A POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT10M11LVR O-264 O-264 APT10M1LVR APT10M11LVR

    MAX1370

    Abstract: APT10M09LVR
    Text: APT10M09B2VR APT10M09LVR 100V 100A 0.009W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT10M09B2VR APT10M09LVR O-264 O-264 APT10M09 O-247 MAX1370 APT10M09LVR

    Untitled

    Abstract: No abstract text available
    Text: APT10M11B2VR 0.011Ω 100V 100A POWER MOS V T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT10M11B2VR O-247 APT10M1B2VR

    APT10M09B2VFR

    Abstract: APT10M09LVFR
    Text: APT10M09B2VFR APT10M09LVFR 100V POWER MOS V FREDFET 100A 0.009Ω B2VFR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT10M09B2VFR APT10M09LVFR O-264 O-264 APT10M09B2VFR O-247 APT10M09LVFR

    Untitled

    Abstract: No abstract text available
    Text: APT10M09B2VFR APT10M09LVFR 100V POWER MOS V FREDFET 100A 0.009Ω B2VFR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT10M09B2VFR APT10M09LVFR O-264 O-264 APT10M09B2VFR O-247

    Untitled

    Abstract: No abstract text available
    Text: APT10M11B2VFR APT10M11LVFR 100V 100A 0.011W B2VFR POWER MOS V FREDFET T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT10M11B2VFR APT10M11LVFR O-264 O-264 APT10M11 O-247

    Untitled

    Abstract: No abstract text available
    Text: APT10M09B2VFR APT10M09LVFR 100V 100A 0.009W POWER MOS V FREDFET B2VFR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT10M09B2VFR APT10M09LVFR O-264 O-264 APT10M09 O-247

    APT10M11B2VFR

    Abstract: TF6646 APT10M11LVFR
    Text: APT10M11B2VFR APT10M11LVFR 100V 100A 0.011W B2VFR POWER MOS V FREDFET T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT10M11B2VFR APT10M11LVFR O-264 O-264 APT10M11 O-247 APT10M11B2VFR TF6646 APT10M11LVFR

    Untitled

    Abstract: No abstract text available
    Text: APT10M20BFLL APT10M20SFLL 92A 0.020W 100V POWER MOS 7TM FREDFET BFLL D3PAK Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON


    Original     		PDF APT10M20BFLL APT10M20SFLL O-247 O-247

    Untitled

    Abstract: No abstract text available
    Text: APT10M20BLL APT10M20SLL 100V 92A 0.020W POWER MOS 7TM BLL D3PAK Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON


    Original     		PDF APT10M20BLL APT10M20SLL O-247 O-247

    R7525

    Abstract: APT10M19BVFR
    Text: APT10M19BVFR 75A 0.019Ω 100V POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    Original     		PDF APT10M19BVFR O-247 O-247 MIL-STD-750 R7525 APT10M19BVFR

    Untitled

    Abstract: No abstract text available
    Text: APT10M11JVR 0.011Ω 100V 144A POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT10M11JVR OT-227 E145592

    APT10M25SVR

    Abstract: No abstract text available
    Text: APT10M25SVR 75A 0.025Ω 100V POWER MOS V D3PAK V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT10M25SVR Co632) APT10M25SVR

    Untitled

    Abstract: No abstract text available
    Text: APT10M25SVR 75A 0.025Ω 100V POWER MOS V D3PAK V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT10M25SVR

    APT10M25BVFR

    Abstract: No abstract text available
    Text: APT10M25BVFR 75A 0.025Ω 100V POWER MOS V FREDFET Power MOS V™ is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    Original     		PDF APT10M25BVFR O-247 O-247 APT10M25BVFR

    Untitled

    Abstract: No abstract text available
    Text: APT10M19SVR 75A 0.019Ω 100V POWER MOS V D3PAK V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT10M19SVR Conti632)

    Untitled

    Abstract: No abstract text available
    Text: APT10M25BVFR 100V POWER MOS V 75A 0.025Ω FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT10M25BVFR O-247 O-247

    APT10M25BVFR

    Abstract: No abstract text available
    Text: APT10M25BVFR 100V POWER MOS V 75A 0.025Ω FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT10M25BVFR O-247 O-247 APT10M25BVFR

    APT10M07JVR

    Abstract: No abstract text available
    Text: APT10M07JVR 100V 225A 0.007Ω POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT10M07JVR OT-227 E145592 APT10M07JVR

    Untitled

    Abstract: No abstract text available
    Text: A dvanced P o w er Tec h n o lo g y APT10M25BNFR APT10M30BNFR POWER MOS IVe 0.025a 100V 75A 100V 75A 0.030Í2 AVALANCHE RATED FREDFET N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan     		PDF APT10M25BNFR APT10M30BNFR APT10M25/10M 30BNFR APT10M25/10M30BNFR O-247AD GGD1411

    Untitled

    Abstract: No abstract text available
    Text: A dvanced P ow er Tec h n o lo g y APT10M25BNFR APT10M30BNFR 2 * WER MOS n i 100V 75A 100V 75A 0.025Q 0.030Q AVALANCHE RATED FREDFET N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol V DSS «D Ail Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan     		PDF APT10M25BNFR APT10M30BNFR APT10M25/10M30BNFR O-247AD

    75 LS 541

    Abstract: No abstract text available
    Text: APT10M19SVR A dvanced P ow er Te c h n o lo g y ' 100V 75A 0.019 fl POWER MOS V Power MOS Visa new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan     		PDF APT10M19SVR APT10M19SVR MIL-STD-750 75 LS 541

    2N6902

    Abstract: No abstract text available
    Text: 2N6902 in H a r r i s S E M I C O N D U C T O R 12A, 100V, 0.200 Ohm, N-Channel Logic Level Power MOSFET September 1997 Features Description • 12A, 100V The 2N6902 is an N-Channel enhancement mode silicon gate power MOS field effect transistor specifically designed


    OCR Scan     		PDF 2N6902 2N6902

    APT10M25BNFR

    Abstract: N mos 100v 100A
    Text: A d van ced P o w er Te c h n o l o g y APT10M25BNFR APT10M30BNFR 100V 75A 0.025a 100V 67A 0.030Ü FAST RECOVERY MOSFET FAMILY POWER MOS IV N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol 100 Continuous Drain Current 'd @ Tc


    OCR Scan     		PDF APT10M25BNFR APT10M30BNFR APT10M30BNFR 533nH. O-247AD N mos 100v 100A