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    N TRANSISTOR NEC K 2500 Search Results

    N TRANSISTOR NEC K 2500 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    N TRANSISTOR NEC K 2500 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    nec optocoupler

    Abstract: igbt display plasma optocouplers 3030 optocoupler 4-pin dip open collector transistor NEC 2500 PS9301 DIP4 gull wing SSOP12 NEC K 2500 PS8551
    Text: N E C E l ec t r o n i c s O P TO C O U P L E RS — 2 0 0 8 California Eastern Laboratories is the exclusive sales and marketing partner for the products made by the Compound Semiconductor Devices Division of NEC Electronics Corporation CSDD . These include


    Original     		PDF transistors984-6720 CL-610B nec optocoupler igbt display plasma optocouplers 3030 optocoupler 4-pin dip open collector transistor NEC 2500 PS9301 DIP4 gull wing SSOP12 NEC K 2500 PS8551

    2SC1223

    Abstract: 2SC2150 2SC2367 NEC NE "micro x" d 2SC2585 2SC3604 NEC NE "micro x" 2SC2148 NE AND micro-X 2SC2149
    Text: DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm noise amplification at 1.0 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and


    Original     		PDF 2SC3604 2SC3604 2SC1223 2SC2150 2SC2367 NEC NE "micro x" d 2SC2585 NEC NE "micro x" 2SC2148 NE AND micro-X 2SC2149

    nec 2501

    Abstract: nec 2501 optocoupler 2501 optocoupler nec 2701 optocoupler 2501 2701 optocoupler NEC-2701 optocoupler 2501 dip 2501 NEC nec optocoupler
    Text: California Eastern Laboratories Optocouplers Selection Guide NUMBERING SYSTEM All devices are available in lead free versions P S X X X X X — X — X — X— X Lead Finish None = Standard Finish A = Lead (Pb) Free Finish Identification number CTR Rank


    Original     		PDF PS28XX-1-F3 PS28XX-4-F3 PS2801-1-F3* PS2801-4-F3 PS28XX-4 nec 2501 nec 2501 optocoupler 2501 optocoupler nec 2701 optocoupler 2501 2701 optocoupler NEC-2701 optocoupler 2501 dip 2501 NEC nec optocoupler

    PS8551L4

    Abstract: PS2581 PS2581A NEC PS2581 PS9451 PS9317 PS9817A-1 ps9122 PS9302 ps2805c
    Text: IC output optocoupler Transistor optocoupler May 2009 Introduction Based on all in-house technologies Bipolar, CMOS and Bi-CMOS NEC Electronics can offer a complete portfolio of optoisolation products. The long of experience of NEC Electronics in developing and manufacturing highest quality optoelectronic products is reflected in hundreds


    Original     		PDF EPMC-PU-0038-4 PS8551L4 PS2581 PS2581A NEC PS2581 PS9451 PS9317 PS9817A-1 ps9122 PS9302 ps2805c

    2sc3052ef

    Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
    Text: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		PDF 24GHz BF517 B132-H8248-G5-X-7600 2sc3052ef 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor

    CSTCE8M00G15C

    Abstract: transistor K 1413 PS2701A-1-F3 PS2801A-1 PS2801A-1-F3 PS2801A-1-F4 PS2801A-4 PS2801A-4-F3 PS2801A-4-F4 ps2701A
    Text: NEC's HIGH ISOLATION VOLTAGE SOP PHOTOCOUPLER PS2801A-1 PS2801A-4 FEATURES DESCRIPTION • HIGH ISOLATION VOLTAGE BV: 2500 Vr.m.s. NEC's PS2801A-1 and PS2801A-4 is an optically coupled isolator containing a GaAs light emitting diode and a NPN silicon phototransistor. This device is mounted in a plastic


    Original     		PDF PS2801A-1 PS2801A-4 PS2801A-1 PS2801A-4 PS2701A-1-F3, CSTCE8M00G15C transistor K 1413 PS2701A-1-F3 PS2801A-1-F3 PS2801A-1-F4 PS2801A-4-F3 PS2801A-4-F4 ps2701A

    CSTCE8M00G15C

    Abstract: Switching diode 4 PS2801A-1 PS2801A-1-F3 PS2801A-1-F4 PS2801A-4 PS2801A-4-F3 PS2801A-4-F4
    Text: NEC's HIGH ISOLATION VOLTAGE SOP PHOTOCOUPLER PS2801A-1 PS2801A-4 FEATURES DESCRIPTION • HIGH ISOLATION VOLTAGE BV: 2500 Vr.m.s. NEC's PS2801A-1 and PS2801A-4 is an optically coupled isolator containing a GaAs light emitting diode and a NPN silicon phototransistor. This device is mounted in a plastic


    Original     		PDF PS2801A-1 PS2801A-4 PS2801A-1 PS2801A-4 PS2801A-1-F3, CSTCE8M00G15C Switching diode 4 PS2801A-1-F3 PS2801A-1-F4 PS2801A-4-F3 PS2801A-4-F4

    NT 407 F TRANSISTOR

    Abstract: 2SC2150 2SC2585 2SC2367 NE AND micro-X NEC NE "micro x" 2SC1223 2SC3604 2SC2148 2SC2149
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    uPD4050

    Abstract: PD4050 PS2806-1 PS2806-1-F3 PS2806-1-F4 PS2806-4 PS2806-4-F3 PS2806-4-F4 "AC Motor" APPLICATIONS
    Text: HIGH ISOLATION VOLTAGE AC INPUT DARLINGTON TRANSISTOR TYPE SOP OPTOCOUPLER PS2806-1 PS2806-4 FEATURES DESCRIPTION • HIGH ISOLATION VOLTAGE BV: 2500 kVr.m.s. PS2806-1 and PS2806-4 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon


    Original     		PDF PS2806-1 PS2806-4 PS2806-1 PS2806-4 PS2806-1-F3, PS2806-4-F3 uPD4050 PD4050 PS2806-1-F3 PS2806-1-F4 PS2806-4-F3 PS2806-4-F4 "AC Motor" APPLICATIONS

    darlington pair transistor

    Abstract: PS2501 PS2500 PS2501L PS2502 PS2505 PS2505L PS2506 ps2506-1 ps2506 equivalent
    Text: Application Note PS2500-SERIES MULTI-CHANNEL PHOTOCOUPLER Document No. P11278EJ3V0AN00 3rd edition Date Published November 1997 N 1992 Printed in Japan [MEMO] 2 CAUTION Within this device there exists GaAs (Gallium Arsenide) material which is a harmful substance if ingested. Please do not under any circumstances break the


    Original     		PDF PS2500-SERIES P11278EJ3V0AN00 darlington pair transistor PS2501 PS2500 PS2501L PS2502 PS2505 PS2505L PS2506 ps2506-1 ps2506 equivalent

    a 1712 8pin

    Abstract: C10535E VP15-00-3
    Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC1679G 5 V-BIAS, +15.5 dBm OUTPUT, 1.8 GHz WIDEBAND Si MMIC AMPLIFIER DESCRIPTION The µPC1679G is a silicon monolithic integrated circuit designed as medium output power amplifier for high frequency system applications. Due to +13 dBm TYP. output at 1 GHz, this IC is recommendable for transmitter


    Original     		PDF PC1679G PC1679G a 1712 8pin C10535E VP15-00-3

    PS2003

    Abstract: PS2003B NEC photo coupler
    Text: NEC PHOTO COUPLER B fC IR O N O E V K PS2003B PHOTO COUPLER -NEPOC SERIES - DESCRIPTION The PS2003B is an o p tic a lly coupled isolator containing a GaAs lig h t em ittin g diode and an NPN silicon ph oto transistor. FEATURES PACKAGE DIMENSIONS in m illim eter! in c h n


    OCR Scan     		PDF PS2003B PS2003B PS2003 NEC photo coupler

    TG 2309

    Abstract: NEC photo coupler
    Text: DATA SHEET NEC PHOTO COUPLER PS2732 ELECTRON DEVICE HIGH ISOLATION VOLTAGE H IG H COLLECTOR TO EM ITTER VOLTAGE SO P PHOTO C O U PLER D E SC R IP T IO N P A C K A G E D IM E N S IO N S Unit: mm The PS2732 are optically coupled isolator containing a GaAs light emitting diode and an NPN silicon darlingtonconnected photo-transistor.


    OCR Scan     		PDF PS2732 PS2732 PS2732-E3, PS2732-F3, RC-1009B: PS2732-E3* PS2732-F3* PS2732-E4 PS2732-F4 TG 2309 NEC photo coupler

    NEC K 2500

    Abstract: N transistor NEC K 2500 2SC1223 transistor marking S00 2SC3604 2SC2367 NEC marking b NEC PART NUMBER MARKING 2SC3603 2SC2150
    Text: DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm The 2SC3604 is an NPN epitaxial transistor designed for lownoise amplification at 1.0 to 6.0 GHz. This transistor has low-noise


    OCR Scan     		PDF 2SC3604 2SC3604 15obots NEC K 2500 N transistor NEC K 2500 2SC1223 transistor marking S00 2SC2367 NEC marking b NEC PART NUMBER MARKING 2SC3603 2SC2150

    transistor NEC D 586

    Abstract: nec a 634 NEC D 586 2SC3587 NEC K 2500 NEC 3500
    Text: DATA SHEET SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3587 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS in mm noise am plification at 0.5 to 6.0 GHz. T his transistor has low-noise


    OCR Scan     		PDF 2SC3587 2SC3587 transistor NEC D 586 nec a 634 NEC D 586 NEC K 2500 NEC 3500

    NEC JAPAN 282 110 01

    Abstract: No abstract text available
    Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS ¿¿PC2709TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The /zPC2709TB is a silicon monolithic integrated circuits designed as 1st IF amplifier for DBS tuners. This IC is packaged in super minimold package which is smaller than conventional minimold.


    OCR Scan     		PDF uPC2709TB /zPC2709TB PC2709TB /iPC2709T /xPC2709TB /xPC2709T. NEC JAPAN 282 110 01

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT ¿¿PC2709T 5 V, MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER D E S C R IP T IO N The /¿PC2709T is a silicon monolithic integrated circuit designed as 1st IF amplifier for DBS tuners. This IC is packaged in minimold package.


    OCR Scan     		PDF uPC2709T PC2709T

    nec 151

    Abstract: transistor NEC ka 42 NEC D 553 C nec, hetero junction transistor NE32900
    Text: PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32900 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32900 is Hetero Junction FET chip that utilizes the hetero junction between Si-doped AIGaAs and undoped InGaAs to create high mobility electrons.


    OCR Scan     		PDF NE32900 NE32900 nec 151 transistor NEC ka 42 NEC D 553 C nec, hetero junction transistor

    IC ATA 2398

    Abstract: ata 2398 transistor D 2395 NE33284A te 2395 TRANSISTOR low noise FET NEC U TVR 681
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE33284A L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The N E33284A is a Herero Junction FET that utilizes the hetero junction to create high m obility electrons. Its excellent low noise and high associated gain make it suitable for GPS,


    OCR Scan     		PDF NE33284A NE33284A IC ATA 2398 ata 2398 transistor D 2395 te 2395 TRANSISTOR low noise FET NEC U TVR 681

    IC/CTC 1351 transistor pin detail

    Abstract: No abstract text available
    Text: DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUIT uPC 2 7 1 0 TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The ^¡PC2710TB is a silicon monolithic integrated circuit designed as PA driver for 900 MHz band cellular


    OCR Scan     		PDF PC2710TB PC2710T uPC2710TB uPC2710T WS60-00-1 C10535E) P13443EJ2V0DS00 IC/CTC 1351 transistor pin detail

    nec a 634

    Abstract: Nec K 872 NEC Ga FET C band FET transistor s-parameters NEC 1132 NEC Ga FET marking D
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE325S01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE325S01 is a Hetero Junction FET that utilizes the hetero junction to create high m obility electrons. Its excellent low noise and high associated gain make it suitable for DBS


    OCR Scan     		PDF NE325S01 NE325S01 NE325S01-T1 nec a 634 Nec K 872 NEC Ga FET C band FET transistor s-parameters NEC 1132 NEC Ga FET marking D

    transistor NEC D 822 P

    Abstract: nec gaas fet marking NEC Ga FET transistor ne425s01
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE425S01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE425S01 is a Hetero Junction FET that utilizes the Unit: mm hetero junction to create high m obility electrons. Its excellent


    OCR Scan     		PDF NE425S01 NE425S01 NE425S01-T1 transistor NEC D 822 P nec gaas fet marking NEC Ga FET transistor ne425s01

    TRANSISTOR BO 345

    Abstract: No abstract text available
    Text: DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUITS UPC2776TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER D E S C R IP T IO N The ^¡PC2776TB is a silicon monolithic integrated circuits designed as wideband amplifier.


    OCR Scan     		PDF UPC2776TB PC2776TB uPC2776TB uPC2776T PC2776T. WS60-00-1 C10535E) TRANSISTOR BO 345

    NE42484A

    Abstract: transistor NEC D 986 NE42484A-SL ne42484 IC ATA 2388 L to Ku BAND LOW NOISE AMPLIFIER NEC Ga FET marking L nec gaas fet marking NEC Ga FET marking A KU 506 transistor
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE42484A C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET PACKAGE DIMENSIONS Unit : mm DESCRIPTION The N E42484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent


    OCR Scan     		PDF NE42484A NE42484A NE42484A-SL NE42484A-T1 transistor NEC D 986 ne42484 IC ATA 2388 L to Ku BAND LOW NOISE AMPLIFIER NEC Ga FET marking L nec gaas fet marking NEC Ga FET marking A KU 506 transistor