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    N-CHANNEL 2.5V Search Results

    N-CHANNEL 2.5V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    N-CHANNEL 2.5V Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    sot-363 n-channel mosfet

    Abstract: sot-363 p-channel mosfet Dual N-Channel mosfet sot-363 marking code 12 SOT-363 amplifier high current sot-363 p-channel mosfet MARKING 3C5 CMKDM3590 Dual P-Channel mosfet sot-363 SOT-363 marking th CMKDM3575
    Text: Central CMKDM3590 N-CH/N-CH CMKDM7590 P-CH/P-CH CMKDM3575 N-CH/P-CH SURFACE MOUNT N-CHANNEL AND P-CHANNEL DUAL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS TM Semiconductor Corp. DESCRIPTION: These CENTRAL SEMICONDUCTOR devices are combinations of dual N-Channel and P-Channel


    Original     		CMKDM3590 CMKDM7590 CMKDM3575 OT-363 CMKDM3590: CMKDM7590: CMKDM3575: RATI150 CMKDM7590 sot-363 n-channel mosfet sot-363 p-channel mosfet Dual N-Channel mosfet sot-363 marking code 12 SOT-363 amplifier high current sot-363 p-channel mosfet MARKING 3C5 Dual P-Channel mosfet sot-363 SOT-363 marking th PDF

    w905

    Abstract: FW905
    Text: FW905 Ordering number : EN8754 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs FW905 General-Purpose Switching Device Applications Features • • Composite type with an N-channel MOSFET and a P-channel MOSFET driving from a 2.5V supply voltage


    Original     		FW905 EN8754 w905 FW905 PDF

    Untitled

    Abstract: No abstract text available
    Text: FW905 Ordering number : EN8754 N-Channel and P-Channel Silicon MOSFETs FW905 General-Purpose Switching Device Applications Features • • Composite type with an N-channel MOSFET and a P-channel MOSFET driving from a 2.5V supply voltage contained in a single package.


    Original     		FW905 EN8754 FW905/D PDF

    w905

    Abstract: FW905 6-A25
    Text: FW905 Ordering number : EN8754 N-Channel and P-Channel Silicon MOSFETs FW905 General-Purpose Switching Device Applications Features • • Composite type with an N-channel MOSFET and a P-channel MOSFET driving from a 2.5V supply voltage contained in a single package.


    Original     		FW905 EN8754 w905 FW905 6-A25 PDF

    FDMJ1032C

    Abstract: marking 032 SC-75 Dual N & P-Channel
    Text: FDMJ1032C tm Dual N & P-Channel PowerTrench MOSFET N-Channel: 20V, 3.2A, 90mΩ P-Channel: -20V, -2.5A, 160mΩ Features General Description Q1: N-Channel This dual N and P-Channel „ Max rDS on = 90mΩ at VGS = 4.5V, ID = 3.2A MOSFET is produced enhancement


    Original     		FDMJ1032C FDMJ1032C marking 032 SC-75 Dual N & P-Channel PDF

    FDD3510H

    Abstract: No abstract text available
    Text: FDD3510H Dual N & P-Channel PowerTrench MOSFET N-Channel: 80V, 13.9A, 80mΩ P-Channel: -80V, -9.4A, 190mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 80mΩ at VGS = 10V, ID = 4.3A MOSFETs are produced using Fairchild Semiconductor’s


    Original     		FDD3510H FDD3510H PDF

    Untitled

    Abstract: No abstract text available
    Text: FDD3510H Dual N & P-Channel PowerTrench MOSFET N-Channel: 80V, 13.9A, 80mΩ P-Channel: -80V, -9.4A, 190mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement ̈ Max rDS on = 80mΩ at VGS = 10V, ID = 4.3A MOSFETs are produced using Fairchild Semiconductor’s


    Original     		FDD3510H FDD3510H PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM6E03TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type + N-Channel MOS Type SSM6E03TU ○Power Management Switch Applications Unit: mm • P-channel MOSFET and 1.8 V drive • N-channel MOSFET and 1.5 V drive • P-channel MOSFET and N-channel MOSFET incorporated into one


    Original     		SSM6E03TU PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM6E03TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type + N-Channel MOS Type SSM6E03TU Power Management Switch Applications Unit: mm • P-channel MOSFET and 1.8 V drive • N-channel MOSFET and 1.5 V drive • P-channel MOSFET and N-channel MOSFET incorporated into one


    Original     		SSM6E03TU PDF

    equivalent smd mosfet

    Abstract: common-drain MOSFET TSSOP-8 dual n-channel IC MOSFET QG MOSFET TSSOP-8 SI6968BEDQ nc245 65a30 si6968
    Text: MOSFET IC SMD Type Dual N-Channel 2.5-V G-S MOSFET Common Drain, ESD Protection KI6968BEDQ(SI6968BEDQ) TSSOP-8 Unit: mm Features VDS=20V,rDS(on)=0.022 @VGS=4.5V,ID=6.5A VDS=20V,rDS(on)=0.030 @VGS=2.5V,ID=5.5A N-Channel N-Channel * Typical value by design


    Original     		KI6968BEDQ SI6968BEDQ) equivalent smd mosfet common-drain MOSFET TSSOP-8 dual n-channel IC MOSFET QG MOSFET TSSOP-8 SI6968BEDQ nc245 65a30 si6968 PDF

    MOSFET P-channel SOT-23

    Abstract: Power MOSFET N-Channel sot-23 CMPDM7590 C759 CMPDM3590 C359 sot-23 P-Channel MOSFET MOSFET P channel SOT-23 P-Channel SOT-23 Power MOSFET
    Text: Central CMPDM3590 N-CH CMPDM7590 P-CH TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPDM3590 and CMPDM7590 are complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs


    Original     		CMPDM3590 CMPDM7590 CMPDM3590 OT-23 CMPDM3590: CMPDM7590: 200mA MOSFET P-channel SOT-23 Power MOSFET N-Channel sot-23 C759 C359 sot-23 P-Channel MOSFET MOSFET P channel SOT-23 P-Channel SOT-23 Power MOSFET PDF

    marking code R

    Abstract: MARKING CODE W
    Text: Central CMBDM3590 N-CH CMBDM7590 P-CH TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMBDM3590 and CMBDM7590 are complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs


    Original     		CMBDM3590 CMBDM7590 CMBDM3590: CMBDM7590: OT-923 200mA CMBDM7590 marking code R MARKING CODE W PDF

    CMUDM7590

    Abstract: on semiconductor marking code sot CMUDM3590
    Text: Central CMUDM3590 N-CH CMUDM7590 P-CH TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUDM3590 and CMUDM7590 are complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs


    Original     		CMUDM3590 CMUDM7590 CMUDM3590 OT-523 CMUDM3590: CMUDM7590: 200mA CMUDM7590 on semiconductor marking code sot PDF

    TSOP-6

    Abstract: SSF2701
    Text: SSF2701 GENERAL FEATURES N-Channel ● VDS = 20V,ID = 2.4A RDS ON < 125mΩ @ VGS=4.5V RDS(ON) < 200mΩ @ VGS=2.5V Schematic diagram P-Channel ● P-channel N-channel VDS = -20V,ID = -2.8A RDS(ON) < 100mΩ @ VGS=-4.5V RDS(ON) < 150mΩ @ VGS=-2.5V Pin Assignment


    Original     		SSF2701 25unless TSOP-6 SSF2701 PDF

    Untitled

    Abstract: No abstract text available
    Text: LTC2195 LTC2194/LTC2193 16-Bit, 125/105/80Msps Low Power Dual ADCs FEATURES n n n n n n n n n n n n DESCRIPTION 2-Channel Simultaneous Sampling ADC Serial LVDS Outputs: 1, 2 or 4 Bits per Channel 76.8dB SNR 90dB SFDR Low Power: 432mW/360mW/249mW Total 216mW/180mW/125mW per Channel


    Original     		LTC2195 LTC2194/LTC2193 16-Bit, 125/105/80Msps 432mW/360mW/249mW 216mW/180mW/125mW 550MHz 52-Pin 2195/LTC2194/LTC2193 35dBm PDF

    Untitled

    Abstract: No abstract text available
    Text: SSF2783 GENERAL FEATURES N-Channel VDS = 20V,ID = 3.5A RDS ON < 60mΩ @ VGS=4.5V RDS(ON) < 90mΩ @ VGS=2.5V RDS(ON) < 150mΩ @ VGS=1.8V ● P-channel N-channel P-Channel VDS = -20V,ID = -2.7A RDS(ON) < 110mΩ @ VGS=-4.5V RDS(ON) < 145mΩ @ VGS=-2.5V


    Original     		SSF2783 25unless PDF

    Untitled

    Abstract: No abstract text available
    Text: RY A N I CEDM7004 Central IM EL PR TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM7004 is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process,


    Original     		CEDM7004 CEDM7004 OT-883L tp10s 400mA 200mA 100mA 16-June PDF

    C3j marking

    Abstract: CMLDM7003 CMLDM7003J code c3j sot transistor pinout "MARKING CODE C3*" n-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR sot 26 Dual N-Channel MOSFET marking c3j c30 C3J
    Text: Central CMLDM7003 CMLDM7003J Semiconductor Corp. SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7003 and CMLDM7003J are Enhancement-mode N-Channel Field Effect Transistors, manufactured by the N-Channel


    Original     		CMLDM7003 CMLDM7003J CMLDM7003 CMLDM7003J OT-563 CMLDM7003: CMLDM7003J: 26-June C3j marking code c3j sot transistor pinout "MARKING CODE C3*" n-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR sot 26 Dual N-Channel MOSFET marking c3j c30 C3J PDF

    Untitled

    Abstract: No abstract text available
    Text: Central CMLDM7003 CMLDM7003J Semiconductor Corp. SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7003 and CMLDM7003J are Enhancement-mode N-Channel Field Effect Transistors, manufactured by the N-Channel


    Original     		CMLDM7003 CMLDM7003J CMLDM7003 CMLDM7003J OT-563 CMLDM7003: CMLDM7003J: PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4562DY Vishay Siliconix N- and P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N Channel N-Channel P Channel P-Channel 20 −20 20 rDS(on) (W) ID (A) 0.025 @ VGS = 4.5 V 7.1 0.035 @ VGS = 2.5 V 6.0 0.033 @ VGS = −4.5 V −6.2 0.050 @ VGS = −2.5 V


    Original     		Si4562DY Si4562DY-T1 Si4562DY-T1--E3 S-51109--Rev. 13-Jun-05 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4562DY Vishay Siliconix N- and P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N Channel N-Channel P Channel P-Channel 20 −20 20 rDS(on) (W) ID (A) 0.025 @ VGS = 4.5 V 7.1 0.035 @ VGS = 2.5 V 6.0 0.033 @ VGS = −4.5 V −6.2 0.050 @ VGS = −2.5 V


    Original     		Si4562DY Si4562DY-T1 Si4562DY-T1--E3 08-Apr-05 PDF

    mosfet vgs 5v

    Abstract: mosfet vgs 5v SOT23 MOSFET 2KV MOSFET SOT-23 C7003 VGS-12V MARKING CODE 24 TRANSISTOR mosfet low vgs MARKING CODE 16 transistor sot23 10mhz mosfet
    Text: CMPDM7003 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPDM7003 is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed


    Original     		CMPDM7003 CMPDM7003 C7003 OT-23 115mA 200mA 24-July mosfet vgs 5v mosfet vgs 5v SOT23 MOSFET 2KV MOSFET SOT-23 C7003 VGS-12V MARKING CODE 24 TRANSISTOR mosfet low vgs MARKING CODE 16 transistor sot23 10mhz mosfet PDF

    CMUDM7001

    Abstract: mosfet low vgs
    Text: CMUDM7001 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUDM7001 is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed


    Original     		CMUDM7001 CMUDM7001 OT-523 100mA mosfet low vgs PDF

    CMLDM7003E

    Abstract: CMLDM7003J CMLDM7003 CMLDM7003JE marking code c73 mosfet marking code 40 C73 MARKING CODE marking C73
    Text: Central CMLDM7003E CMLDM7003JE Semiconductor Corp. SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7003E and CMLDM7003JE are Enhancement-mode N-Channel Field Effect Transistors, manufactured by the N-Channel


    Original     		CMLDM7003E CMLDM7003JE CMLDM7003JE CMLDM7003E OT-563 CMLDM7003: CMLDM7003J: 25-September CMLDM7003J CMLDM7003 marking code c73 mosfet marking code 40 C73 MARKING CODE marking C73 PDF