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    N-CHANNEL DEPLETION-MODE MOSFET Search Results

    N-CHANNEL DEPLETION-MODE MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PQU650-12P Murata Manufacturing Co Ltd AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P Visit Murata Manufacturing Co Ltd
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    N-CHANNEL DEPLETION-MODE MOSFET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    P-Channel Depletion Mosfets

    Abstract: mosfet 2N3796 2N3797 2N3796 MFE825 MFE3002 P-Channel Depletion Mosfet depletion mode mosfet 100 MHz MFE3003 N5484
    Text: MOSFETs Single Gate FIELD-EFFECT TRANSISTORS continued P-CHANNEL Enhancement MOSFETs MOSFETs are available in either depletion/enhancement or enhancement mode (in general, depletion/enhancement devices are operated in the depletion mode and are referred to as depletion devices). They are available in both N- and P-channel,


    OCR Scan     		2N5486 2N4416 2N4416A 2N5245 3N128* P-Channel Depletion Mosfets mosfet 2N3796 2N3797 2N3796 MFE825 MFE3002 P-Channel Depletion Mosfet depletion mode mosfet 100 MHz MFE3003 N5484 PDF

    ALD110900

    Abstract: depletion MOSFET n channel depletion MOSFET N-Channel Depletion-Mode MOSFET N-Channel Depletion-Mode MOSFET high voltage ultra low igss pA ALD110800 ALD114804 ALD114813 ALD114813PCL
    Text: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD114813/ALD114913 QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD® VGS th = -1.30V MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION APPLICATIONS ALD114813/ALD114913 are monolithic quad/dual depletion mode N-Channel


    Original     		ALD114813/ALD114913 ALD114813/ALD114913 ALD110900 depletion MOSFET n channel depletion MOSFET N-Channel Depletion-Mode MOSFET N-Channel Depletion-Mode MOSFET high voltage ultra low igss pA ALD110800 ALD114804 ALD114813 ALD114813PCL PDF

    ultra low igss pA

    Abstract: ALD110800 depletion MOSFET Depletion-Mode MOSFET N-Channel Depletion-Mode MOSFET ALD114804 ALD114835 ALD114835PCL ALD114835SCL ALD114935
    Text: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD114835/ALD114935 QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD® VGS th = -3.50V MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION APPLICATIONS ALD114835/ALD114935 are monolithic quad/dual depletion mode N-Channel


    Original     		ALD114835/ALD114935 ALD114835/ALD114935 ultra low igss pA ALD110800 depletion MOSFET Depletion-Mode MOSFET N-Channel Depletion-Mode MOSFET ALD114804 ALD114835 ALD114835PCL ALD114835SCL ALD114935 PDF

    BSD20

    Abstract: 9010J BSD22 gbs transistors V1525 depletion MOSFET n mosfet depletion
    Text: _ I l . bb53T31 0012=134 3 BSD20 ObE D BSD22 N AMER PHILIPS/DISCRETE MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTORS T - S S '- IS ' Symmetrical insulated-gate silicon MOS field-effect transistors of the N-channel depletion mode type.


    OCR Scan     		bb53T31 BSD20 BSD22 OT-143 bb53131 7Z90790 9010J BSD22 gbs transistors V1525 depletion MOSFET n mosfet depletion PDF

    FET 4900

    Abstract: CP CLARE 4367 MOS FET SOT-223 MOS FET SOT-223 ON CPC5602C CPC5602CTR CPC5604A CPC5610A CPC5611A
    Text: CPC5602C N Channel Depletion Mode FET Description The CPC5602C is an “N” channel depletion mode Field Effect Transistor FET that utilizes Clare’s proprietary third generation vertical DMOS process. The third generation process realizes world class, high voltage


    Original     		CPC5602C CPC5602C OT-223 DS-CPC5602C-Rev. FET 4900 CP CLARE 4367 MOS FET SOT-223 MOS FET SOT-223 ON CPC5602CTR CPC5604A CPC5610A CPC5611A PDF

    sot transistor pinout

    Abstract: n channel depletion MOSFET 351 SOT223 CPC5602C
    Text: CPC5602C N Channel Depletion Mode FET Description The CPC5602C is an “N” channel depletion mode Field Effect Transistor FET that utilizes Clare’s proprietary third generation vertical DMOS process. The third generation process realizes world class, high voltage


    Original     		CPC5602C OT-223 CPC5602C DS-CPC5602C-R1 sot transistor pinout n channel depletion MOSFET 351 SOT223 PDF

    Untitled

    Abstract: No abstract text available
    Text: BSD12 J \ _ MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the n-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.


    OCR Scan     		BSD12 7Z90791 PDF

    BSD12

    Abstract: depletion MOSFET Mosfet n-channel switching transistor N-Channel depletion mos gbs transistor free transistor
    Text: BSD12 _ MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor o f the n-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.


    OCR Scan     		BSD12 7Z907 a03ST0t. BSD12 depletion MOSFET Mosfet n-channel switching transistor N-Channel depletion mos gbs transistor free transistor PDF

    FET SOT-89 N-Channel

    Abstract: CPC3710C ignition module sot89 fet
    Text: CPC3710C N-Channel Depletion-Mode Vertical DMOS FETs BVDSX/ BVDGX 250V RDS ON (max) 10Ω IDSS (min) Package 220mA SOT-89 Description The CPC3710C is an N-channel depletion mode field effect transistor (FET) that utilizes Clare’s proprietary third generation vertical DMOS process. Third


    Original     		CPC3710C 220mA OT-89 CPC3710C DS-CPC3710C-R00A FET SOT-89 N-Channel ignition module sot89 fet PDF

    RY115

    Abstract: CPC3714C R00a D 4242 transistor
    Text: CPC3714C N-Channel Depletion-Mode Vertical DMOS FETs BVDSX/ BVDGX 350V RDS ON (max) 14Ω IDSS (min) Package 240mA SOT-89 Description The CPC3714C is an N-channel depletion mode field effect transistor (FET) that utilizes Clare’s proprietary third generation vertical DMOS process. Third


    Original     		CPC3714C 240mA OT-89 CPC3714C DS-CPC3714C-R00A RY115 R00a D 4242 transistor PDF

    FET SOT-89 N-Channel

    Abstract: D 4242 transistor CPC3720C FET SOT-89
    Text: CPC3720C N-Channel Depletion-Mode Vertical DMOS FETs BVDSX/ BVDGX 350V RDS ON (max) 22Ω IDSS (min) Package 130mA SOT-89 Description The CPC3720C is an N-channel depletion mode field effect transistor (FET) that utilizes Clare’s proprietary third generation vertical DMOS process. Third


    Original     		CPC3720C 130mA OT-89 CPC3720C DS-CPC3720C-R00A FET SOT-89 N-Channel D 4242 transistor FET SOT-89 PDF

    depletion mode fet

    Abstract: CPC3730C MOSFET 350V SOT-89
    Text: CPC3730C N-Channel Depletion-Mode Vertical DMOS FETs BVDSX/ BVDGX 350V RDS ON (max) 30Ω IDSS (min) Package 140mA SOT-89 Description The CPC3730C is an N-channel depletion mode field effect transistor (FET) that utilizes Clare’s proprietary third generation vertical DMOS process. Third


    Original     		CPC3730C 140mA OT-89 CPC3730C DS-CPC3730C-R00B depletion mode fet MOSFET 350V SOT-89 PDF

    Untitled

    Abstract: No abstract text available
    Text: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD114835/ALD114935 QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD® VGS th = -3.50V PRECISION MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION APPLICATIONS ALD114835/ALD114935 are high precision monolithic quad/dual depletion mode


    Original     		ALD114835/ALD114935 ALD114835 ALD114835/ALD114935 PDF

    Untitled

    Abstract: No abstract text available
    Text: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD114813/ALD114913 QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD® VGS th = -1.30V PRECISION MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION APPLICATIONS ALD114813/ALD114913 are high precision monolithic quad/dual depletion mode


    Original     		ALD114813/ALD114913 ALD114813/ALD114913 PDF

    Untitled

    Abstract: No abstract text available
    Text: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD114813/ALD114913 QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD® VGS th = -1.30V PRECISION MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION APPLICATIONS ALD114813/ALD114913 are high precision monolithic quad/dual depletion mode


    Original     		ALD114813/ALD114913 ALD114813/ALD114913 PDF

    Untitled

    Abstract: No abstract text available
    Text: DMCD N-Channel _ Depletion-Mode MOSFET in c o r p o r a te d DEVICE TYPE PACKAGE Single TO-72 TO-206AF • SD2100 Single Chip • Available as DMCD1CHP TYPICAL CHARACTERISTICS Depletion Mode - Drain Current & On-Reslstance vs. Gate-Source Cutoff Voltage


    OCR Scan     		O-206AF) SD2100 -----10V. PDF

    Depletion MOSFET

    Abstract: switching transistor 331 b771D n channel depletion MOSFET N-Channel Depletion-Mode MOSFET BSD12 free transistor gbs transistor convertor 5 V to -5 V Depletion
    Text: 711Gä2t> Q0b770ö 217 • P H I N BSD12 MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon M OS field-effect transistor o f the n-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.


    OCR Scan     		BSD12 Depletion MOSFET switching transistor 331 b771D n channel depletion MOSFET N-Channel Depletion-Mode MOSFET BSD12 free transistor gbs transistor convertor 5 V to -5 V Depletion PDF

    d2625

    Abstract: MD2130 ultrasonic piezoelectric transducer driver DN2625K6-G B0521 125OC DN2625 DN2625K4-G "thermal via" PCB D-PAK DN2625DK6-G
    Text: Supertex inc. DN2625 N-Channel Depletion-Mode Vertical DMOS FET in Single and Dual Options Features General Description ► ► ► ► ► ► The Supertex DN2625 is a low threshold depletion-mode normally-on transistor utilizing an advanced vertical DMOS


    Original     		DN2625 DN2625 DSFP-DN2625 B052110 d2625 MD2130 ultrasonic piezoelectric transducer driver DN2625K6-G B0521 125OC DN2625K4-G "thermal via" PCB D-PAK DN2625DK6-G PDF

    N-Channel

    Abstract: N-Channel Depletion-Mode MOSFET
    Text: TSM126 N-Channel Depletion-Mode MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(Ω)(max) Pin Definition: 1. Gate 2. Source 3. Drain 600 700 @ VGS = 0V Features ● Depletion Mode ● Low Gate Charge ID (A) 0.03 Block Diagram Application ● Converters ● Telecom


    Original     		TSM126 OT-23 TSM126CX N-Channel N-Channel Depletion-Mode MOSFET PDF

    nchannel

    Abstract: DN2530 DN2535 DN2540 DN2624 DN2640 LND150 LND250 n-channel
    Text: Chapter 8 – Depletion Mode MOSFETs DN2530 DN2535 DN2540 DN2624 DN2640 LND150 LND250 N-Channel; 300V; 12Ω N-Channel; 350V; 25Ω N-Channel; 400V; 25Ω N-Channel; 240V; 4Ω N-Channel; 400V; 6.0Ω N-Channel; 500V; 1.0KΩ N-Channel; 500V; 1.0KΩ


    Original     		DN2530 DN2535 DN2540 DN2624 DN2640 LND150 LND250 nchannel DN2530 DN2535 DN2540 DN2624 DN2640 LND150 LND250 n-channel PDF

    SD2100

    Abstract: No abstract text available
    Text: SD2100 N-Channel Depletion-Mode Lateral DMOS FET in c o r p o ra t e d The SD2100 is a depletion-mode MOSFET which utilizes our lateral DMOS process to provide low capacitance, fast switching, and high operating frequency. This DMOS process effectively bridges the


    OCR Scan     		SD2100 O-206AF) PDF

    r08 sot223

    Abstract: CPC5602
    Text: CPC5602 N-Channel Depletion Mode FET INTEGRATED CIRCUITS DIVISION Parameter Drain-to-Source Voltage - VDS Rating 350 Max On-Resistance - RDS on 14 Units V  Max Power 2.5 W Features • 350V Drain-to-Source Voltage • Depletion Mode Device Offers Low RDS(on)


    Original     		CPC5602 CPC5602 DS-CPC5602-R08 r08 sot223 PDF

    Untitled

    Abstract: No abstract text available
    Text: bbS3=i31 002544=1 =105 * A P X BSD22 b7E D N AMER PHI LIP S/DISCRETE MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the n-channel depletion mode type. The transistor is sealed in a SOT-143 envelope and features a low ON-resistance and low capacitances.


    OCR Scan     		BSD22 OT-143 PDF

    BSD10

    Abstract: depletion MOSFET n channel depletion MOSFET BSD12 gbs transistors depletion mode power mosfet 7z87626 k 3525 MOSFET convertor 5 V to -5 V
    Text: • . N AMER PHILIPS/DISCRETE - ft — — — — bbSB'iai Q01724'5 S • E5E D BSD10 BSD12 MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTORS Symmetrical insulated-gate silicon MOS field-effect transistor of the N-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.


    OCR Scan     		G1724-S BSD10 BSD12 BSD10 T-35-25 7Z90790 -r90X depletion MOSFET n channel depletion MOSFET BSD12 gbs transistors depletion mode power mosfet 7z87626 k 3525 MOSFET convertor 5 V to -5 V PDF