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    N-CHANNEL ENHANCEMEN-MODE MOSFET Search Results

    N-CHANNEL ENHANCEMEN-MODE MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPS1120D Texas Instruments Dual P-channel Enhancemenent-Mode MOSFET 8-SOIC Visit Texas Instruments Buy
    TPS1120DR Texas Instruments Dual P-channel Enhancemenent-Mode MOSFET 8-SOIC Visit Texas Instruments Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    N-CHANNEL ENHANCEMEN-MODE MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    N-Channel Enhancemen-Mode MOSFET

    Abstract: NTE2386
    Text: NTE2386 MOSFET N–Channel Enhancemen Mode, High Speed Switch Description: The NTE2386 Power MOSFET features advantages such as voltage control, very fast switching, ease of paralleling and temperature stability, and is suited for applications such as switching power


    Original     		PDF NTE2386 NTE2386 N-Channel Enhancemen-Mode MOSFET

    RA30H4047M

    Abstract: RA30H4047M-E01 RA30H4047M-01 30H4047M
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4047M 400-470MHz 30W 12.5V MOBILE RADIO DESCRIPTION The RA30H4047M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to


    Original     		PDF RA30H4047M 400-470MHz RA30H4047M 30-watt 470-MHz RA30H4047M-E01 RA30H4047M-01 30H4047M

    RA30H4047M

    Abstract: RA30H4047M-01 300w transistor power amplifier circuit diagram
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4047M 400-470MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H4047M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to


    Original     		PDF RA30H4047M 400-470MHz RA30H4047M 30-watt 470-MHz RA30H4047M-01 300w transistor power amplifier circuit diagram

    RA30H

    Abstract: RA30H4047 circuit diagram of fm
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4047M 400-470MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H4047M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to 470-MHz


    Original     		PDF RA30H4047M 400-470MHz RA30H4047M 30-watt 470-MHz RA30H RA30H4047 circuit diagram of fm

    14069U

    Abstract: MC14069UBD MC14069UBFL1 MC14069UB gate no MC14069UBCP Enhancemen to-92
    Text: MC14069UB Hex Inverter The MC14069UB hex inverter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six


    Original     		PDF MC14069UB CD4069UB MC14069UBCP MC14069UBFEL MC14069UBFL1 MC14069UBCP MC14069UBD 51A-03 MC14069UBDR2 14069U MC14069UBD MC14069UBFL1 MC14069UB gate no Enhancemen to-92

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


    OCR Scan     		PDF LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc