2SK1961
Abstract: No abstract text available
Text: Ordering number:ENN4502 N-Channel Junction Silicon FET 2SK1961 High-Frequency Low-Noise Amplifier Applications Applications Package Dimensions • High-frequency low-noise amplifier applications. unit:mm 2019B Features [2SK1961] 5.0 4.0 4.0 5.0 · Adoption of FBET process.
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ENN4502
2SK1961
2019B
2SK1961]
SC-43
2SK1961
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NE429M01
Abstract: NE429M01-T1
Text: PRELIMINARY DATA SHEET NE429M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES LOW NOISE FIGURE & HIGH ASSOCIATED GAIN: NF = 0.9 dB TYP, GA = 10 dB TYP at f = 12 GHz • 6 PIN SUPER MINIMOLD PACKAGE
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NE429M01
NE429M01
NE429M01-T1
24-Hour
NE429M01-T1
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2SK445
Abstract: No abstract text available
Text: Ordering number:EN1439B N-Channel Junction Silicon FET 2SK445 Video Camera 1st Stage Applications Features Package Dimensions unit:mm 2005C [2SK445] 5.0 4.0 4.0 5.0 • Largeyfs. · Small Ciss. · Ultralow noise figure. · High frequency, low-frequency, low noise amplifier.
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EN1439B
2SK445
2005C
2SK445]
SC-43
2SK445
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Untitled
Abstract: No abstract text available
Text: 3SK199 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK199 TV Tuner, UHF RF Amplifier Applications Unit: mm • Superior cross modulation performance. • Low reverse transfer capacitance: Crss = 0.015 pF typ. • Low noise figure: NF = 1.9dB (typ.)
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3SK199
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Untitled
Abstract: No abstract text available
Text: 2SK1771 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type 2SK1771 FM Tuner, VHF RF Amplifier Applications • Superior inter modulation performance. • Low noise figure: NF = 1.0dB typ. Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics
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2SK1771
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2SK36
Abstract: No abstract text available
Text: 2SK369 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK369 For Low Noise Audio Amplifier Applications • Unit: mm Suitable for use as first stage for equalizer and MC head amplifiers. • High |Yfs|: |Yfs| = 40 mS typ. (VDS = 10 V, VGS = 0, IDSS = 5 mA)
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2SK369
2SK36
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DSA007622
Abstract: No abstract text available
Text: 2SK210 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK210 FM Tuner Applications VHF Band Amplifier Applications Unit: mm • High power gain: GPS = 24dB typ. (f = 100 MHz) • Low noise figure: NF = 1.8dB (typ.) (f = 100 MHz) • High forward transfer admittance: |Yfs| = 7 mS (typ.) (f = 1 kHz)
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2SK210
SC-59
DSA007622
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2000 W BTL POWER AMPLIFIER TRANSISTOR
Abstract: TPA0202
Text: TPA0202 2-W STEREO AUDIO POWER AMPLIFIER SLOS205B – FEBRUARY 1998 – REVISED DECEMBER 2000 D D D D D D D D Integrated Depop Circuitry High Power with PC Power Supply – 2 W/Ch at 5 V into a 3-Ω Load – 800 mW/Ch at 3 V Fully Specified for Use With 3-Ω Loads
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TPA0202
SLOS205B
24-Pin
2000 W BTL POWER AMPLIFIER TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: TPA6112A2 www.ti.com SLOS342A – DECEMBER 2000 – REVISED SEPTEMBER 2004 150-mW STEREO AUDIO POWER AMPLIFIER FEATURES • • • • • • • DGQ PACKAGE TOP VIEW 150 mW Stereo Output Differential Inputs PC Power Supply Compatible – Fully Specified for 3.3 V and 5 V Operation
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TPA6112A2
SLOS342A
150-mW
TPA6112A2
10-pin
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Untitled
Abstract: No abstract text available
Text: TPA112 www.ti.com SLOS212E – AUGUST 1998 – REVISED JUNE 2004 150-mW STEREO AUDIO POWER AMPLIFIER FEATURES • • • • • DESCRIPTION 150-mW Stereo Output Wide Range of Supply Voltages – Fully Specified for 3.3-V and 5-V Operation – Operational From 2.5 V to 5.5 V
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TPA112
SLOS212E
150-mW
TPA112
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Untitled
Abstract: No abstract text available
Text: TPA6111A2 www.ti.com SLOS313B – DECEMBER 2000 – REVISED JUNE 2004 150-mW STEREO AUDIO POWER AMPLIFIER FEATURES • • • • • • • DESCRIPTION 150-mW Stereo Output PC Power Supply Compatible – Fully Specified for 3.3-V and 5-V Operation – Operation to 2.5 V
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TPA6111A2
SLOS313B
150-mW
TPA122,
LM4880,
LM4881
TPA6111A2
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Untitled
Abstract: No abstract text available
Text: Data Sheet STEREO 2W AUDIO POWER AMPLIFIER AA4002 General Description Features The AA4002 is a monolithic stereo audio power amplifier including DC volume control, a selectable gain/bass boost, and stereo bridged audio power amplifiers, with the capability of producing 2W into 4Ω with
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AA4002
AA4002
-78dB,
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Untitled
Abstract: No abstract text available
Text: TWL1103 VOICE-BAND AUDIO PROCESSOR VBAP SLWS108 – JULY 2000 D D D D D D 2.7-V Operation Two Differential Microphone Inputs, One Differential Earphone Output, and One Single-Ended Earphone Output Programmable Gain Amplifiers for Transmit, Receive, Sidetone, and Volume
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TWL1103
SLWS108
15-Bit
32-Terminal
SLYT015
SLAA088
SSYA008
SZZA017A
SLAA013
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i2c driver six
Abstract: LD11 LD12 S-PQFP-G32 TWL1103
Text: TWL1103 VOICE-BAND AUDIO PROCESSOR VBAP SLWS108A – JULY 2000 – JANUARY 2001 D D D D D D 2.7-V Operation Two Differential Microphone Inputs, One Differential Earphone Output, and One Single-Ended Earphone Output Programmable Gain Amplifiers for Transmit, Receive, Sidetone, and Volume
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TWL1103
SLWS108A
15-Bit
32-Pin
80-Pin
i2c driver six
LD11
LD12
S-PQFP-G32
TWL1103
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LS1151
Abstract: F467 IN4007 working IN4007 polarity IR IN4007 ericsson rectifier 100 amp ctr 34 42VZ Diodes In4007
Text: PBL 3786 March 1996 PBL 3786 Voice-switched Speakerphone and Toneringer Circuit Description Key Features The PBL 3786 contains all the necessary circuitry, amplifiers, detectors, comparators and control functions to implement a high-performance, voice-switched, loudspeaking, “hands-free” telephone. The gain dynamics attenuation between
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amplif70
3786QN
3786QN-T
S-164
LS1151
F467
IN4007 working
IN4007 polarity
IR IN4007
ericsson rectifier 100 amp
ctr 34
42VZ
Diodes In4007
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SCD0703T-220
Abstract: TPA005Dxx
Text: TPA2000D2 2-W FILTERLESS STEREO CLASS-D AUDIO POWER AMPLIFIER SLOS291A – MARCH 2000 – REVISED MARCH 2000 D D D D D D D Modulation Scheme Optimized to Operate Without a Filter 2 W Into 3-Ω Speakers THD+N< 0.4% < 0.08% THD+N at 1 W, 1 kHz, Into 4-Ω Load
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TPA2000D2
SLOS291A
SCD0703T-220
TPA005Dxx
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Untitled
Abstract: No abstract text available
Text: TPA6021A4 www.ti.com SLOS465 – JUNE 2005 2-W STEREO AUDIO POWER AMPLIFIER WITH ADVANCED DC VOLUME CONTROL FEATURES • • • • • DESCRIPTION 2 W Into 4-Ω Speakers With External Heatsink DC Volume Control With 2-dB Steps from -40 dB to 20 dB – Fade Mode
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TPA6021A4
SLOS465
-85-dB
TPA6021A4
20-pin
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SK2497 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE 2SK2497 SHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure : NF = 1.2dB f=12GHz • High Gain Unit in mm 2.16 ± 0.2 1.1 1.1 : Ga = 10dB (f=12GHz)
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2SK2497
12GHz)
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 3SK291 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N-CHANNEL DUAL GATE MOS TYPE 3SK291 TV TUNER, UHF RF AMPLIFIER APPLICATIONS : • Superior Cross Modulation Performance • Low Reverse Transfer Capacitance : Crss = 0.016pF Typ. • Low Noise Figure
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3SK291
016pF
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l20pF
Abstract: No abstract text available
Text: TOSHIBA 3SK249 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3SK249 Unit in mm TV TUNER, UHF RF AMPLIFIER APPLICATIONS. 2. 1+0. 1 • Superior Cross Modulation Performance. • Low Reverse Transfer Capacitance. : Crss = 20fF Typ. • Low Noise Figure.
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3SK249
l20pF
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NE32584C-T1
Abstract: nec 3435 transistor am 4428
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm T h e N E 3 25 84C is a H etero Jun ction F ET th a t utilizes the hetero ju n ctio n to crea te high m obility e lectron s.
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NE32584C
NE32584C-T1A
NE32584C-T1
nec 3435 transistor
am 4428
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nec 151
Abstract: transistor NEC ka 42 NEC D 553 C nec, hetero junction transistor NE32900
Text: PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32900 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32900 is Hetero Junction FET chip that utilizes the hetero junction between Si-doped AIGaAs and undoped InGaAs to create high mobility electrons.
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NE32900
NE32900
nec 151
transistor NEC ka 42
NEC D 553 C
nec, hetero junction transistor
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NJX5412A
Abstract: NJX5412B NJX5412C
Text: I NEW JAPAN RADIO CO LT» m 45E ]> bSblfiôB 00011Ô2 *ìBfi H N J R C _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ GaAs FET_ _ _ _ _ _ _ _ _ _ _ _ _ NJX5412 Series D 'T '^ z s • Description NJX5412 series GaAs FET’s with N-channel Schottky barrier recessed gate structure and low noise are designed for in
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NJX5412
240mW
I75-C
NJX5412A
NJX5412B
NJX5412C
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Untitled
Abstract: No abstract text available
Text: B 31 9 -9 7 IF 1 3 3 0 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • LOW NOISE, HIGH GAIN AMPLIFIER Absolute maximum ratings at T* = 25°C Reverse Gate Source & Reverse Gate Drain Voltage - 20 V Continuous Forward Gate Current 10 mA Continuous Device Power Dissipation
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IF1330
NJ132H
T0-236
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