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    N-CHANNEL MOS OR GATE Search Results

    N-CHANNEL MOS OR GATE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    N-CHANNEL MOS OR GATE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    d1711

    Abstract: NEC C11531E 2SK1283 C11531E
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1283 SWITCHING N-CHANNEL POWER MOS FET PACKAGE DRAWING Unit: mm DESCRIPTION The 2SK1283 is N-channel MOS Field Effect Transistor designed or solenoid, motor and lamp driver. 8.5 MAX. 3.2 ±0.2 2.8 MAX. FEATURES 12 TYP.


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    2SK1283 2SK1283 C11531E) d1711 NEC C11531E C11531E PDF

    d1711

    Abstract: C11531E 2SK1283 2SK1283,
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1283 SWITCHING N-CHANNEL POWER MOS FET PACKAGE DRAWING Unit: mm DESCRIPTION The 2SK1283 is N-channel MOS Field Effect Transistor designed or solenoid, motor and lamp driver. 8.5 MAX. 3.2 ±0.2 2.8 MAX. FEATURES 12 TYP.


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    2SK1283 2SK1283 C11531E) d1711 C11531E 2SK1283, PDF

    CD4019

    Abstract: MC1401 14519B
    Text: MC14519B M O T O R O L A CMOS MSI 4-BIT AND/OR SELECTOR or LOW-POWER COMPLEMENTARY MOS QUAD 2-CHANNEL DATA SELECTOR or 4-BIT AND/OR SELECTOR QUAD EXCLUSIVE "NOR" GATE The MC14519B is constructed with MOS P-channel and N-channei en­ hancement mode devices in a monolithic structure. These complementary


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    MC14519B MC14519B CD4019 MC1401 14519B PDF

    to92 transistor pinout

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification N-channel vertical D-MOS transistor BST74A FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC07 OR DATA SHEET N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and designed for use


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    BST74A to92 transistor pinout PDF

    PLA relay

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSP126 FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC07 OR DATA SHEET N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and designed


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    BSP126 OT223 OT223. PLA relay PDF

    philips bs170

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors N-channel vertical D-MOS transistor BS170 FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC07 OR DATA SHEET N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended fo r


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    BS170 ax830 philips bs170 PDF

    Untitled

    Abstract: No abstract text available
    Text: BSS89 ' i _ vv FOR DETAILED INFORMATION! SEE THE LATEST ISSUE OF HANDBOOK SC07 OR DATA SHEET N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a TO-92 variant envelope. Designed primarily as


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    BSS89 PDF

    to92 transistor pinout

    Abstract: No abstract text available
    Text: BST74A _ yV FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC07 OR DATA SHEET N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and designed for use


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    BST74A to92 transistor pinout PDF

    Untitled

    Abstract: No abstract text available
    Text: BSN254 BSN254A y v- FOR MORE DETAILED INFORMATION SEE LATEST ISSUE OF HANDBOOK SC07 OR DATA SHEET N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTORS N-channel enhancement mode vertical D-MOS transistors in TO-92 variant envelope and designed for


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    BSN254 BSN254A BSN254) BSN254A) PDF

    Untitled

    Abstract: No abstract text available
    Text: BSS89 _ FOR MORE DETAILED INFORMATION SEE LATEST ISSUE OF HANDBOOK SC07 OR DATA SHEET N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a TO-92 variant envelope. Designed prim arily as


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    BSS89 PDF

    2SK1590

    Abstract: No abstract text available
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 MOS FIELD EFFECT TRANSISTOR 2SK1590 N-CHANNEL MOS FET FOR SWITCHING The 2SK1590, N-channel vertical type MOS FET, is a sw itching


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    2SK1590 2SK1590, 2SK1590 PDF

    2SK1287

    Abstract: MEI-1202 TEA-1035
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials._ P1 98.2 N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION


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    2SK1287 2SK1287 MEI-1202 TEA-1035 PDF

    2SK1290

    Abstract: MEI-1202 TEA-1035
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK1290 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE


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    2SK1290 The2SK1290 2SK1290 MEI-1202 TEA-1035 PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification N-channel vertical D-MOS transistor BST76A FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC07 OR DATA SHEET N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and designed fo r use


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    BST76A PDF

    2SK1501

    Abstract: 2SK1501-Z MEI-1202 TEA-1035
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials._ P1 98.2 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1501 is N-channel MOS Field Effect Transistor


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    S2SK1501 1501-Z 2SK1501 IEI-1209) 2SK1501-Z MEI-1202 TEA-1035 PDF

    2SK1664

    Abstract: MEI-1202 TEA-1035
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 i DATA SHEET N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK1664 SWITCHING N-CHANNEL POWER MOS FET


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    2SK1664 2SK1664 IEI-1209) MEI-1202 TEA-1035 PDF

    2SK1285

    Abstract: MEI-1202 TEA-1035
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET NEC ^N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK1285 SWITCHING N-CHANNEL POWER MOS FET


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    2SK1285 MEI-1202 TEA-1035 PDF

    Untitled

    Abstract: No abstract text available
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET NEC r N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK1290 SWITCHING N-CHANNEL POWER MOS FET


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    2SK1290 2SK1290 PDF

    2SK1492

    Abstract: MEI-1202 TEA-1035
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials._ P1 98.2 _ DATA SHEET NEC r N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK1492 SWITCHING N-CHANNEL POWER MOS FET


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    2SK1492 MEI-1202 TEA-1035 PDF

    ta 7769

    Abstract: nec 13A 2SK1492 MEI-1202 TEA-1035
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET ,y N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK1492 NEC SWITCHING N-CHANNEL POWER MOS FET


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    2SK1492 ta 7769 nec 13A MEI-1202 TEA-1035 PDF

    2sk1132

    Abstract: 2SJ165
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 9 8 .2 MOS FIELD EFFECT TRANSISTOR 2SK1132 N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING The 2SK1132, N-channel vertical type MOS FET, is a sw itching


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    2SK1132 2SK1132, 2sk1132 2SJ165 PDF

    K1494

    Abstract: 2SK1493 2SK1494-Z K1493
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET N-CHANNEL MOS FIELD EFFECT POWER TRANSISTORS 2SK1493,2SK1493-Z/2SK1494,2SK1494-Z SWITCHING N-CHANNEL POWER MOS FET


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    2SK1493 2SK1493-Z/2SK1494 2SK1494-Z 2SK1495/2SK1496 K1494 2SK1494-Z K1493 PDF

    2SK1289

    Abstract: MEI-1202 TEA-1035
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials._ P1 98.2 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK1289 is N-channel MOS Field Effect Transistor


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    2SK1289 2SK1289 IEI-1209) MEI-1202 TEA-1035 PDF

    SN254A

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistors BSN254/A FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC07 OR DATA SHEET N-channel enhancem ent m ode vertical D-MOS transistors in TO -92 variant envelope and designed fo r


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    BSN254/A BSN254) SN254A PDF