2804SS
Abstract: 2804S N-Channel MOSFET 40V 7A
Text: CYStech Electronics Corp. Spec. No. : C438Q8 Issued Date : 2009.02.11 Revised Date : Page No. : 1/9 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC2804Q8 BVDSS ID RDSON max N-CH 40V 7A 28mΩ P-CH -40V -6A 44mΩ Description The MTC2804Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8
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C438Q8
MTC2804Q8
MTC2804Q8
UL94V-0
2804SS
2804S
N-Channel MOSFET 40V 7A
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fdd*8447l
Abstract: fdd8447 FDD8447L inverter 12 V to 32v dc 40V 14A DPAK
Text: FDD8447L 40V N-Channel PowerTrench MOSFET 40V, 54A, 8.5mΩ Features General Description Max rDS on = 8.5mΩ at VGS = 10V, ID = 14A This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer
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FDD8447L
fdd*8447l
fdd8447
inverter 12 V to 32v dc
40V 14A DPAK
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FDD8447L
Abstract: fdd*8447l fdd8447 50a 30v 8.5m MOSFET
Text: FDD8447L 40V N-Channel PowerTrench MOSFET 40V, 50A, 8.5mΩ Features General Description Max rDS on = 8.5mΩ at VGS = 10V, ID = 14A This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer
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FDD8447L
FDD8447L
fdd*8447l
fdd8447
50a 30v 8.5m MOSFET
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Untitled
Abstract: No abstract text available
Text: FDD8447L 40V N-Channel PowerTrench MOSFET 40V, 50A, 8.5mΩ Features General Description ̈ Max rDS on = 8.5mΩ at VGS = 10V, ID = 14A This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer
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FDD8447L
FDD8447L
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FDB8447
Abstract: FDB8447L Power MOSFET, Fairchild
Text: FDB8447L 40V N-Channel PowerTrench MOSFET 40V, 50A, 8.5mΩ Features General Description Max rDS on = 8.5mΩ at VGS = 10V, ID = 14A This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer
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FDB8447L
O-263AB
FDB8447
FDB8447L
Power MOSFET, Fairchild
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FDD8447L
Abstract: 50a 30v 8.5m MOSFET fdd8447 fdd*8447l 40V 14A DPAK
Text: FDD8447L 40V N-Channel PowerTrench MOSFET 40V, 50A, 8.5m: Features General Description Max rDS on = 8.5m: at VGS = 10V, ID = 14A This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer
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FDD8447L
50a 30v 8.5m MOSFET
fdd8447
fdd*8447l
40V 14A DPAK
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fdd*8447l
Abstract: FDD8447L fdd8447
Text: FDD8447L 40V N-Channel PowerTrench MOSFET 40V, 54A, 8.5mΩ Features General Description Max rDS on = 8.5mΩ at VGS = 10V, ID = 14A This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer
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FDD8447L
fdd*8447l
fdd8447
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FDB8447L
Abstract: No abstract text available
Text: FDB8447L 40V N-Channel PowerTrench MOSFET 40V, 50A, 8.5mΩ Features General Description ̈ Max rDS on = 8.5mΩ at VGS = 10V, ID = 14A This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer
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FDB8447L
O-263AB
FDB8447L
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FDB8447L
Abstract: FDB8447 fdb fairchild
Text: FDB8447L 40V N-Channel PowerTrench MOSFET 40V, 50A, 8.5mΩ Features General Description Max rDS on = 8.5mΩ at VGS = 10V, ID = 14A This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer
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FDB8447L
O-263AB
FDB8447L
FDB8447
fdb fairchild
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT4450 Power MOSFET 7A, 40V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UT4450 is an N-channel MOSFET. it uses UTC’s advanced technology to provide the customers with a minimum on state resistance, high switching speed and low gate charge.
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UT4450
UT4450
UT4450L-S08-R
UT4450G-S08-R
UT4450L-S08-T
UT4450G-S08-T
QW-R502-898,
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Untitled
Abstract: No abstract text available
Text: ZXMN4A06GQ Green ADVANCED INFORMATION Product Summary V BR DSS RDS(ON) 40V 0.05Ω @ VGS = 10V 40V N-CHANNEL ENHANCEMENT MODE MOSFET Features ID TA = +25°C 7A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON) and yet maintain superior switching
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ZXMN4A06GQ
AEC-Q101
DS36694
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Untitled
Abstract: No abstract text available
Text: ZXMN4A06G Green ADVANCED INFORMATION Product Summary V BR DSS RDS(ON) 40V 0.05Ω @ VGS = 10V 40V N-CHANNEL ENHANCEMENT MODE MOSFET Features ID TA = +25°C 7A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON) and yet maintain superior switching
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ZXMN4A06G
AEC-Q101
DS33545
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Untitled
Abstract: No abstract text available
Text: FDS4080N3 40V N-Channel FLMP PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for
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FDS4080N3
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FDS4080N7
Abstract: No abstract text available
Text: FDS4080N7 40V N-Channel FLMP PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for
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FDS4080N7
FDS4080N7
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FDS4080N3
Abstract: No abstract text available
Text: FDS4080N3 40V N-Channel FLMP PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for
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FDS4080N3
FDS4080N3
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FDS4080N7
Abstract: No abstract text available
Text: FDS4080N7 40V N-Channel FLMP PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for
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FDS4080N7
FDS4080N7
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Untitled
Abstract: No abstract text available
Text: FDP8447L tm N-Channel PowerTrench MOSFET 40V, 50A, 8.7mΩ Features General Description ̈ Max rDS on = 8.7mΩ at VGS = 10V, ID = 14A This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench technology to deliver
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FDP8447L
O-220
FDP8447L
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FDS4080N3
Abstract: No abstract text available
Text: FDS4080N3 40V N-Channel FLMP PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for
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FDS4080N3
FDS4080N3
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FDS4080N3
Abstract: No abstract text available
Text: FDS4080N3 40V N-Channel FLMP PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for
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FDS4080N3
FDS4080N3
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FDP8447L
Abstract: No abstract text available
Text: FDP8447L tm N-Channel PowerTrench MOSFET 40V, 50A, 8.7mΩ Features General Description Max rDS on = 8.7mΩ at VGS = 10V, ID = 14A This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench technology to deliver
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FDP8447L
O-220
FDP8447L
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Untitled
Abstract: No abstract text available
Text: FDS4080N3 40V N-Channel Bottomless PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for
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FDS4080N3
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A4044
Abstract: No abstract text available
Text: FDS4080N7 40V N-Channel Bottomless PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for
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FDS4080N7
A4044
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FDS4080N7
Abstract: No abstract text available
Text: FDS4080N7 40V N-Channel Bottomless PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for
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FDS4080N7
FDS4080N7
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FDS4080N3
Abstract: No abstract text available
Text: FDS4080N3 40V N-Channel Bottomless PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for
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FDS4080N3
FDS4080N3
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