Untitled
Abstract: No abstract text available
Text: ARF300 125V, 300W, 45MHz RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE The ARF300 is a N-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF301 P-CHANNEL RF
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ARF300
45MHz
ARF300
45MHz.
ARF301
Rating-4948
micnotes/1810
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Untitled
Abstract: No abstract text available
Text: ARF300 125V, 300W, 45MHz RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE The ARF300 is a N-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF301 P-CHANNEL RF
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ARF300
45MHz
ARF300
45MHz.
ARF301
micnotes/1810
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4948
Abstract: ARF300 ARF301 50VDSS
Text: ARF300 125V, 300W, 45MHz RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE The ARF300 is a N-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF301 P-CHANNEL RF
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ARF300
45MHz
ARF300
45MHz.
ARF301
4948
50VDSS
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ARF301
Abstract: No abstract text available
Text: ARF301 125V, 300W, 45MHz RF POWER MOSFET P-CHANNEL ENHANCEMENT MODE The ARF301 is a P-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF300 N-CHANNEL RF
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ARF301
45MHz
ARF301
45MHz.
ARF300
micnotes/1810
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ARF301
Abstract: "RF MOSFET" 300W ARF300
Text: ARF301 125V, 300W, 45MHz RF POWER MOSFET P-CHANNEL ENHANCEMENT MODE The ARF301 is a P-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF300 N-CHANNEL RF
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ARF301
45MHz
ARF301
45MHz.
ARF300
"RF MOSFET" 300W
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Untitled
Abstract: No abstract text available
Text: RF Test Solutions EMSwitch RF Switch Plug-in Cards TM Model 7001-00X Features: n Flexible Configuration n Fully Expandable n Hardware Interlock ETS-Lindgren’s EMSwitch RF Switch Plug-in Cards ETS-LINDGREN’S EMSwitch RF SWITCH PLUG-IN CARDS are general purpose multi-channel switch
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7001-00X
VDC/28
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MRF9030N
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF9030N Rev. 11, 9/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9030NBR1 945 MHz, 30 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET • Typical Performance at 945 MHz, 26 Volts
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MRF9030N
MRF9030NBR1
MRF9030N
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LT5554
Abstract: LT5578 LTC5583
Text: LTC5583 Matched Dual-Channel 6GHz RMS Power Detector FEATURES n n n n n n n n n n n DESCRIPTION Frequency Range: 40MHz to 6GHz Linear Dynamic Range: Up to 60dB ±0.5dB Typ Accuracy Over Temperature 40dB Channel-to-Channel Isolation at 2GHz Even with Single-Ended RF Inputs
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LTC5583
40MHz
140ns
QFN24
59dBm
LT5581
LTC5582
10GHz
LTC2208
16-Bit,
LT5554
LT5578
LTC5583
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MRF136
Abstract: MRF136Y
Text: L/na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 MRF136 MRF136Y The RF TMOS Line RF Power Field-Effect Transistors N-Channel Enhancement-Mode TMOS 15 W, 30 W 2-400 MHz N-CHANNEL TMOS BROADBAND
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MRF136
MRF136Y
MRF13B
MRF138Y,
MRF136Y
MRF136
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13.56mhz c class amp
Abstract: ARF1519 100C ARF1518 ATC 100C 13.56MHZ mosfet Class B power amplifier, 13.56MHz 13.56Mhz class AB power amplifier
Text: ARF1519 ARF1519 BeO 104T-100 RF POWER MOSFET N - CHANNEL ENHANCEMENT MODE 250V 750W 25MHz The ARF1519 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 25 MHz.
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ARF1519
104T-100
25MHz
ARF1519
13.56mhz c class amp
100C
ARF1518
ATC 100C
13.56MHZ mosfet
Class B power amplifier, 13.56MHz
13.56Mhz class AB power amplifier
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Untitled
Abstract: No abstract text available
Text: ARF1519 ARF1519 BeO 104T-100 RF POWER MOSFET N - CHANNEL ENHANCEMENT MODE 250V 750W 25MHz The ARF1519 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 25 MHz.
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ARF1519
104T-100
25MHz
ARF1519
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CRCW08052201FKEA
Abstract: CRCW080510R0FKE MRF21010-1 MRF21010
Text: Freescale Semiconductor Technical Data Document Number: MRF21010-1 Rev. 10, 10/2008 RF Power Field Effect Transistor MRF21010LR1 N-Channel Enhancement-Mode Lateral MOSFET 2110-2170 MHz, 10 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET • Typical W-CDMA Performance: -45 dBc ACPR, 2170 MHz, 28 Volts,
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MRF21010--1
MRF21010LR1
CRCW08052201FKEA
CRCW080510R0FKE
MRF21010-1
MRF21010
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13.56mhz c class amp
Abstract: ATC 100C 13.56Mhz class AB power amplifier 13.56MHZ mosfet N CHANNEL MOSFET 10A 1000V POWER MOSFET 4600 13.56Mhz rf amplifier 100C ARF1519 750w planar transistor
Text: ARF1519 D ARF1519 BeO 104T-100 G RF POWER MOSFET S N - CHANNEL ENHANCEMENT MODE 250V 750W 25MHz The ARF1519 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 25 MHz.
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ARF1519
104T-100
25MHz
ARF1519
13.56mhz c class amp
ATC 100C
13.56Mhz class AB power amplifier
13.56MHZ mosfet
N CHANNEL MOSFET 10A 1000V
POWER MOSFET 4600
13.56Mhz rf amplifier
100C
750w planar transistor
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MRF136
Abstract: mrf136y amplifier 18006-1-Q1 class A push pull power amplifier mrf136y design rf push pull mosfet power amplifier zener motorola 1N4740 1N5925A 319B
Text: MOTOROLA Order this document by MRF136/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF136 MRF136Y N-Channel Enhancement-Mode MOSFETs . . . designed for wideband large–signal amplifier and oscillator applications up
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MRF136/D
MRF136
MRF136Y
MRF136
MRF136/D*
mrf136y amplifier
18006-1-Q1
class A push pull power amplifier
mrf136y design
rf push pull mosfet power amplifier
zener motorola
1N4740
1N5925A
319B
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6h sot-23
Abstract: CMPF5484 6B1 sot-23 Marking code 6H CMPF5485 CMPF5486 6h MARKING
Text: CMPF5484 CMPF5485 CMPF5486 SURFACE MOUNT N-CHANNEL SILICON JFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPF5484 Series types are surface mount, N-Channel JFETs designed for RF amplifier and mixer applications. These devices
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CMPF5484
CMPF5485
CMPF5486
CMPF5484
CMPF5484:
CMPF5485:
CMPF5486:
OT-23
6h sot-23
6B1 sot-23
Marking code 6H
CMPF5485
CMPF5486
6h MARKING
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Untitled
Abstract: No abstract text available
Text: CMPF5484 CMPF5485 CMPF5486 w w w. c e n t r a l s e m i . c o m SURFACE MOUNT N-CHANNEL SILICON JFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPF5484 Series types are surface mount, N-Channel JFETs designed for RF amplifier and mixer applications. These devices
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CMPF5484
CMPF5485
CMPF5486
CMPF5484
CMPF5484:
CMPF5485:
CMPF5486:
OT-23
100MHz
200MHz
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF177/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF177 RF Power Field Effect Transistors N-Channel Enhancement Mode MOSFET 100W , 28 V, 400 MHz N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 400 MHz
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MRF177/D
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zener diode 7c3
Abstract: electrolytic capacitor 470 Nippon capacitors MRF255 equivalent
Text: MOTOROLA O rder th is docum ent by MRF255/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF255 RF Power Field-Efffect Transistor N-Channel Enhancement-Mode 55 W, 12.5 Vdc, 54 MHz N-CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and industrial applications at frequencies
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MRF255/D
2PHX34608Q
zener diode 7c3
electrolytic capacitor 470
Nippon capacitors
MRF255 equivalent
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Untitled
Abstract: No abstract text available
Text: AMPLIFIER/SWITCH ASSEM BLY MODEL: SW -A-047180 FEATURES • • • • • • • • Military application Broadband RF coverage . 0.475-18.5 GHz RF g a in . 23 dB nominal Channel-to-channel is o la tio n .45 dB minimum
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-A-047180
22ditional
STD-810B,
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n-channel enhancement mode vmos power fet
Abstract: DV1201K
Text: M/A-con p h i as in c be |sb4aaos DDoamo N-CHANNEL ENHANCEMENT-MODE RF POWER FETs DV1201K i * W~ d 7 ^ j/; i î M/A-COM PHI, INC" The DV1201K is a VMOS N-channel enhancement mode RF power FET in a TO-39 package. This 1W device is ideal for low level amplifier or oscillator applications
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DV1201K
DV1201K
n-channel enhancement mode vmos power fet
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Untitled
Abstract: No abstract text available
Text: central" CMPF5484 CMPF5485 CMPF5486 Semiconductor Corp. N-CHANNEL JFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPF5484 Series types are surface mount, N-Channel JFET’s designed for RF amplifier and mixer applications. These devices will operate well in the VHF/UHF frequency range.
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CMPF5484
CMPF5485
CMPF5486
CMPF5484
OT-23
100MHz
200MHz
400MHz
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Untitled
Abstract: No abstract text available
Text: SILICON N CHANNEL DUAL GATE MOS TYPE 3SK259 Unit in mm TV TUNER, UHF RF AMPLIFIER APPLICATIONS. T V TUNER VHF W ID E B A N D RF AM PLIFIER APPLICATIONS • Superior Cross Modulation Performance. • Low Reverse Transfer Capacitance : Crss = 0.025pF Typ.
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3SK259
025pF
100//A
800MHz
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SU 179 transistor
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M RF173/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF173 RF Power Field Effect Transistor N-Channel Enhancement Mode MOSFET 80 W, 28 V, 175 MHz N -C H A N N E L BROADBAND RF POW ER M OSFET Designed for broadband commercial and military applications up to 200 MHz
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RF173/D
SU 179 transistor
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SU 179 transistor
Abstract: SU 179
Text: MOTOROLA O rder this docum ent by M RF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power F ield -E ffect Transistor N-Channel Enhancement-Mode 1 0 0 W , 28 V, 500 MHz N -C H A N N E L BROADBAND RF POW ER FET Designed for broadband commercial and military applications using single
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RF275L/D
SU 179 transistor
SU 179
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