W16 sot 23
Abstract: rza series 51 ria 40 rba sot 23 sot 23 W16 Q-16
Text: R X A resistors isolated resistor networks features • • • • Thin film on silicon Electrical and mechanical stability High integration (up to 12 terminating lines per package) Products with lead-free terminations meet RoHS requirements applications
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RIA Q16
Abstract: No abstract text available
Text: R X A resistors isolated resistor networks features • • • • Thin film on silicon Electrical and mechanical stability High integration (up to 12 terminating lines per package) Products with lead-free terminations meet RoHS requirements applications
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n14 167
Abstract: PA-PGA209-01
Text: PA-PGA209-01 Map Rev B, 8/2/94 189,168 106,85 22,1 147,126 64,43 1,22 209,188 125,105 42,21 167,146 84,63 Bottom View-Base PGA A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16 A17 B1 Base 3 24 22 43 45 66 91 85 87 108 112 126 128 149 191 169 170 4 PGA
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PA-PGA209-01
n14 167
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RIA Q16
Abstract: RIA N08
Text: R X A resistors isolated resistor networks features • Thin film on silicon • Electrical and mechanical stability • High integration (up to 12 terminating lines per package) applications • Series termination • Pull-up/pull-down • Current limiting
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Untitled
Abstract: No abstract text available
Text: R X A resistors isolated resistor networks features • Thin film on silicon • Electrical and mechanical stability • High integration (up to 12 terminating lines per package) applications • Series termination • Pull-up/pull-down • Current limiting
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Untitled
Abstract: No abstract text available
Text: R X A resistors isolated resistor networks features • Thin film on silicon • Electrical and mechanical stability • High integration (up to 12 terminating lines per package) applications • Series termination • Pull-up/pull-down • Current limiting
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Untitled
Abstract: No abstract text available
Text: R X A resistors isolated resistor networks EU features • • • • Thin film on silicon Electrical and mechanical stability High integration (up to 12 terminating lines per package) Products with lead-free terminations meet EU RoHS and China RoHS requirements
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RIA N08
Abstract: 1M resistor frequency appendix T16 KOA w16 sot23 RIA Q20 ria n16
Text: isolated resistor networks KOA’s thin film termination networks provide the ideal solution for demanding high speed/high frequency data applications. Compared to thick film networks these thin film components improve performance, while saving space and reducing costs. Sophisticated semiconductor processing
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MIL-R-55342
MIL-STD-202
MlL-STD-202
RIA N08
1M resistor frequency
appendix T16 KOA
w16 sot23
RIA Q20
ria n16
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rba q16
Abstract: 12w sot-23 MIL-R-55342 sot-23 12w rba q20
Text: bussed resistor networks KOA’s thin film termination networks provide the ideal solution for demanding high speed/high frequency data applications by offering high performance while reducing cost and saving space. Compared to thick film networks, these thin film resistors provide reliability and stability
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pull10
MIL-R-55342
MIL-STD-202
rba q16
12w sot-23
sot-23 12w
rba q20
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rba q16
Abstract: rba q20 sot 23 W16 rba sot 23 W16 sot 23
Text: bussed resistor networks KOA’s thin film termination networks provide the ideal solution for demanding high speed/high frequency data applications by offering high performance while reducing cost and saving space. Compared to thick film networks, these thin film resistors provide reliability and stability
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MIL-R-55342
MIL-STD-202
rba q16
rba q20
sot 23 W16
rba sot 23
W16 sot 23
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Abstract: No abstract text available
Text: RB X , RD(X), RT(X), RNX resistors integrated passive components EU features • Thin film (metal film) resistor array on silicon wafer • Excellent resistance matching, TCR tracking and stabilities • Custom circuits are available with flexible layout (Different
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OT-23
C/-55Â
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rnx Q24
Abstract: No abstract text available
Text: RB X , RD(X), RT(X), RNX resistors integrated passive components EU features • Thin film (metal film) resistor array on silicon wafer • Excellent resistance matching, TCR tracking and stabilities • Custom circuits are available with flexible layout (Different
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OT-23
C/-55Â
rnx Q24
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rba q16
Abstract: rza series
Text: resistors R X A isolated resistor networks EU features • • • • Thin film on silicon Electrical and mechanical stability High integration Products with lead-free terminations meet EU RoHS and China RoHS requirements applications • Series termination
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lm3242
Abstract: LM356 op-amp datasheet LM356 LM6484 SC14421 LM380 spice lm7412 LM117 model SPICE LM356 audio amplifier pc preamp with bass treble circuit diagrams lm324
Text: Welcome to National Semiconductor's latest Linear Designers' Guide! Included in this guide are: • Product selection trees • Associated guides with definitive specifications • Alphanumeric index, to assist in finding the product ID you are seeking
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com/whatsnew/whatsnew60
TYIN2000
lm3242
LM356 op-amp datasheet
LM356
LM6484
SC14421
LM380 spice
lm7412
LM117 model SPICE
LM356 audio amplifier
pc preamp with bass treble circuit diagrams lm324
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Abstract: No abstract text available
Text: resistors R X A isolated resistor networks EU features • • • • dimensions and construction Q20 Dimensions inches (mm) L W p .193 .236 .025 (4.90) (5.99) (0.635) .341 .236 .025 (8.66) (5.99) (0.635) Q24 .341 (8.66) .236 (5.99) .025 (0.635) Q28 .39 (9.9)
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100k3
510K3
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rza series
Abstract: appendix T16 KOA A-1002B RIA Q16
Text: 1733 Reader's Spreads pg1-203:document 1/27/09 4:07 PM Page 80 R X A resistors isolated resistor networks EU features • • • • Thin film on silicon Electrical and mechanical stability High integration Products with lead-free terminations meet EU RoHS
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pg1-203
rza series
appendix T16 KOA
A-1002B
RIA Q16
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Untitled
Abstract: No abstract text available
Text: FDP3672 N-Channel PowerTrench MOSFET 105V, 41A, 33mΩ Features Applications • rDS ON = 25mΩ (Typ.), VGS = 10V, ID = 41A • DC/DC converters and Off-Line UPS • Qg(tot) = 28nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge
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FDP3672
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Abstract: No abstract text available
Text: FDP3672 N-Channel PowerTrench MOSFET 105V, 41A, 33mΩ Features Applications • r DS ON = 25mΩ (Typ.), VGS = 10V, ID = 41A • DC/DC converters and Off-Line UPS • Qg(tot) = 28nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge
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FDP3672
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Untitled
Abstract: No abstract text available
Text: FDP3672 N-Channel PowerTrench MOSFET 107V, 41A, 33mΩ Features Applications • r DS ON = 26mΩ (Typ.), VGS = 10V, ID = 41A • DC/DC converters and Off-Line UPS • Qg(tot) = 28nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge
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FDP3672
O-220AB
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MOSFET S1A
Abstract: M060 45E-2
Text: FDP3672 N-Channel PowerTrench MOSFET 105V, 41A, 33mΩ Features Applications • r DS ON = 25mΩ (Typ.), VGS = 10V, ID = 41A • DC/DC converters and Off-Line UPS • Qg(tot) = 28nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge
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FDP3672
O-220AB
MOSFET S1A
M060
45E-2
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fdp3672
Abstract: diode marking 41a on semiconductor 100E30
Text: FDP3672 N-Channel PowerTrench MOSFET 105V, 41A, 33mΩ Features Applications • r DS ON = 25mΩ (Typ.), VGS = 10V, ID = 41A • DC/DC converters and Off-Line UPS • Qg(tot) = 28nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge
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FDP3672
O-220AB
fdp3672
diode marking 41a on semiconductor
100E30
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FDP3672
Abstract: diode marking 41a on semiconductor marking n6
Text: FDP3672 N-Channel PowerTrench MOSFET 105V, 41A, 33mΩ Features Applications • r DS ON = 25mΩ (Typ.), VGS = 10V, ID = 41A • DC/DC converters and Off-Line UPS • Qg(tot) = 28nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge
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FDP3672
O-220AB
FDP3672
diode marking 41a on semiconductor
marking n6
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TC143E
Abstract: T 105 micro 25E3
Text: FDP3672 N-Channel PowerTrench MOSFET 105 V, 41 A, 33 mΩ Features Applications • RDS on = 25 mΩ ( Typ.) @ VGS = 10 V, ID = 41 A • Consumer Appliances • QG(tot) = 28 nC ( Typ.) @ V GS = 10 V • Synchronous Rectification • Low Miller Charge • Battery Protection Circuit
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FDP3672
FDP3672
O-220
TC143E
T 105 micro 25E3
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Untitled
Abstract: No abstract text available
Text: FDP3672 N-Channel PowerTrench MOSFET 105 V, 41 A, 33 mΩ Features Applications • RDS on = 25 mΩ ( Typ.) @ VGS = 10 V, ID = 41 A • Consumer Appliances • QG(tot) = 28 nC ( Typ.) @ VGS = 10 V • Synchronous Rectification • Low Miller Charge • Battery Protection Circuit
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FDP3672
O-220
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