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    N20 N Search Results

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    N20 N Price and Stock

    Murata Manufacturing Co Ltd LQW15AN20NG00D

    FIXED IND 20NH 370MA 0.27OHM SMD
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    DigiKey LQW15AN20NG00D Reel 80,000 10,000
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    Newark LQW15AN20NG00D Cut Tape 6,732 10
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    TTI LQW15AN20NG00D Reel 10,000
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    Avnet Abacus LQW15AN20NG00D 11 Weeks 10,000
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    Murata Manufacturing Co Ltd LQW15AN20NJ00D

    FIXED IND 20NH 370MA 0.27OHM SMD
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    DigiKey LQW15AN20NJ00D Cut Tape 8,272 1
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    LQW15AN20NJ00D Digi-Reel 8,272 1
    • 1 $0.14
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    Newark LQW15AN20NJ00D Cut Tape 7,310 10
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    TTI LQW15AN20NJ00D Reel 30,000 10,000
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    TME LQW15AN20NJ00D 9,918 1
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    Avnet Abacus LQW15AN20NJ00D 11 Weeks 10,000
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    Infineon Technologies AG BSC12DN20NS3GATMA1

    MOSFET N-CH 200V 11.3A 8TDSON
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    DigiKey BSC12DN20NS3GATMA1 Digi-Reel 8,102 1
    • 1 $1.93
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    BSC12DN20NS3GATMA1 Cut Tape 8,102 1
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    BSC12DN20NS3GATMA1 Reel 5,000 5,000
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    Newark BSC12DN20NS3GATMA1 Cut Tape 1,738 1
    • 1 $1.25
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    Rochester Electronics BSC12DN20NS3GATMA1 6,486 1
    • 1 $0.5208
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    Chip One Stop BSC12DN20NS3GATMA1 Cut Tape 12,800
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    BSC12DN20NS3GATMA1 Cut Tape 4,990
    • 1 $1.31
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    • 1000 $0.597
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    EBV Elektronik BSC12DN20NS3GATMA1 17 Weeks 5,000
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    Infineon Technologies AG IPB320N20N3GATMA1

    MOSFET N-CH 200V 34A D2PAK
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    DigiKey IPB320N20N3GATMA1 Digi-Reel 5,010 1
    • 1 $4.43
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    IPB320N20N3GATMA1 Cut Tape 5,010 1
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    IPB320N20N3GATMA1 Reel 4,000 1,000
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    Newark IPB320N20N3GATMA1 Bulk 18,134 1
    • 1 $3.66
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    Chip One Stop IPB320N20N3GATMA1 Cut Tape 10,558
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    IPB320N20N3GATMA1 Cut Tape 4,000
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    Chip-Germany GmbH IPB320N20N3GATMA1 436
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    EBV Elektronik IPB320N20N3GATMA1 10,000 17 Weeks 1,000
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    New Advantage Corporation IPB320N20N3GATMA1 8,000 1
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    Win Source Electronics IPB320N20N3GATMA1 42,670
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    Infineon Technologies AG BSC22DN20NS3GATMA1

    MOSFET N-CH 200V 7A TDSON-8-5
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BSC22DN20NS3GATMA1 Reel 5,000 5,000
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    Newark BSC22DN20NS3GATMA1 Cut Tape 20,838 5
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    Rochester Electronics BSC22DN20NS3GATMA1 15,000 1
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    Chip One Stop BSC22DN20NS3GATMA1 Cut Tape 4,440
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    EBV Elektronik BSC22DN20NS3GATMA1 17 Weeks 5,000
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    Win Source Electronics BSC22DN20NS3GATMA1 36,551
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    N20 N Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    50N20

    Abstract: 42N20 DIODE N20 IXFH58N20 58N20
    Text: HiPerFETTM Power MOSFETs VDSS IXFH/IXFM 42 N20 IXFH/IXFM 50 N20 IXFH 58 N20 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 200 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 200 V VGS Continuous


    Original
    42N20 50N20 58N20 O-204AE 50N20 42N20 DIODE N20 IXFH58N20 58N20 PDF

    PA6 GF 30

    Abstract: IEC 61076-2-101 61076-2 AWG18 60512-9a 4300-097 IEC 60512-2 PA6 GF PA6 GF 40
    Text: Technical specification: ~28,5 n20 43 Female connector M12x1 field attachable n20 5 max. external cable diameter see table 1 2 4 4pos 250 V 5pos 60 V Current rating: IEC 61076-2-101 4A at 40°C Insulation resistance: IEC 60512-2 >=10 G Ù Pollution degree:


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    60512-9a M12x1 AWG18 2768-m S6/075 S8/075 M12x1, 43K1A835 PA6 GF 30 IEC 61076-2-101 61076-2 60512-9a 4300-097 IEC 60512-2 PA6 GF PA6 GF 40 PDF

    PA6 GF 30

    Abstract: IEC 61076-2-101 ISO 2768 PA6 PA6 GF 40 ISO 2768-M PA6 GF 10 ISO 2768 m12x1 female connector AWG18 61076-2-101
    Text: Technical specification: ~57 n20 Female connector M12x1 field attachable max. external cable diameter see table n20 1 4 2 3 1 5pos 60 V Current rating: IEC 61076-2-101 4A at 40°C Insulation resistance: IEC 60512-2 >=10 GÙ Pollution degree: IEC 60664-1 3/2


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    60512-9a M12x1 AWG18 2768-m S6/075 S8/075 M12x1, 43K1A834 PA6 GF 30 IEC 61076-2-101 ISO 2768 PA6 PA6 GF 40 ISO 2768-M PA6 GF 10 ISO 2768 m12x1 female connector 61076-2-101 PDF

    74n20

    Abstract: No abstract text available
    Text: High Current MegaMOSTMFET VDSS IXTK 74 N20 IXTH 68 N20 ID25 200 V 200 V RDS on 74 A 35 mW 68 A 35 mW N-Channel Enhancement Mode Preliminary data Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ


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    74N20 68N20 O-26e 74n20 PDF

    50N20

    Abstract: 42N20 4250A DIODE N20
    Text: VDSS MegaMOSTMFET IXTH/IXTM 42 N20 IXTH/IXTM 50 N20 200 V 200 V ID25 RDS on 42 A 60 mΩ Ω Ω 50 A 45 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 200 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 200 V


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    42N20 50N20 O-204 O-247 O-204 O-247 50N20 42N20 4250A DIODE N20 PDF

    N20A

    Abstract: MS-001
    Text: Revised January 1999 Package N20A 20-Lead Plastic Dual-In-Line Package PDIP , JEDEC MS-001, 0.300” Wide Package Number N20 1999 Fairchild Semiconductor Corporation n20a.prf www.fairchildsemi.com Package N20A January 1999


    Original
    20-Lead MS-001, N20A MS-001 PDF

    RFP12N18

    Abstract: RFP12N20 "Harris Corporation 1998" AN7254 RFM12N18 RFM12N20 TB334 RFM12
    Text: [ /Title RFM12 N18, RFM12 N20, RFP12N 18, RFP12N 20 /Subject (12A, 180V and 200V, 0.250 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO204AA, TO220AB) /Creator () /DOCIN RFM12N18, RFM12N20, RFP12N18, RFP12N20


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    RFM12 RFP12N O204AA, O220AB) RFM12N18, RFM12N20, RFP12N18, RFP12N20 RFP12N18 RFP12N20 "Harris Corporation 1998" AN7254 RFM12N18 RFM12N20 TB334 RFM12 PDF

    12.5 MHZ crystal

    Abstract: No abstract text available
    Text: O-N20 SERIES Description: The products belong to our oven controlled crystal oscillator series explored for decades, with low phase noise, high stability, high shockproof, stable performance and leading technology in China. Characteristics: ● small size


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    O-N20 30ppb 15ppb 100ppb HY-OS2522FS18D-10M00OCXO, 01ppm, 00MHz O-D14 O-N25 12.5 MHZ crystal PDF

    Untitled

    Abstract: No abstract text available
    Text: O-N20 SERIES Description: The products belong to our oven controlled crystal oscillator series explored for decades, with low phase noise, high stability, high shockproof, stable performance and leading technology in China Characteristics: ● s mall s ize


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    O-N20 30ppb 15ppb 100ppb HY-ON20FS18D-10M00OCXO, 01ppm, 00MHz O-D14 O-N38A O-N25 PDF

    marking N20

    Abstract: SO2222A SO2907A
    Text: SO2222A SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking SO2222A N20 SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE PNP COMPLEMENTARY TYPE IS SO2907A


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    SO2222A OT-23 SO2907A OT-23 marking N20 SO2222A SO2907A PDF

    SO2222A

    Abstract: SO2907A marking n20
    Text: SO2222A SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking SO2222A N20 SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE PNP COMPLEMENTARY TYPE IS SO2907A


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    SO2222A OT-23 SO2907A OT-23 SO2222A SO2907A marking n20 PDF

    SMD transistor n25

    Abstract: O-N51A
    Text: O-N20 SERIES Description: The products belong to our oven controlled crystal oscillator series explored for decades, with low phase noise, high stability, high shockproof, stable performance and leading technology in China Characteristics: ● small size ●


    Original
    O-N20 30ppb 15ppb 100ppb HY-ON20FS18D-10M00OCXO, 01ppm, 00MHz O-D14 O-N25 O-S25 SMD transistor n25 O-N51A PDF

    n20 n

    Abstract: No abstract text available
    Text: O-N20 SERIES Description: The products belong to our oven controlled crystal oscillator series explored for decades, with low phase noise, high stability, high shockproof, stable performance and leading technology in China. Characteristics: ● s mall size


    Original
    O-N20 30ppb 15ppb 100ppb HY-OS2522FS18D-10M00OCXO, 01ppm, 00MHz O-D14 O-N38A n20 n PDF

    na 39

    Abstract: SO2222A SO2907A
    Text: SO2222A SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking SO2222A N20 SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE PNP COMPLEMENTARY TYPE IS SO2907A


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    SO2222A OT-23 SO2907A OT-23 na 39 SO2222A SO2907A PDF

    Untitled

    Abstract: No abstract text available
    Text: SPECIFICATIONS PARAMETERS RESONANT FREQUENCY RESONANT IMPEDANCE MAX MAX INPUT VOLTAGE CAPACITANCE @ 1kHZ PLATE MATERIAL OPERATING TEMPERATURE STORAGE TEMPERATURE VALUES 2,000 ± 500 300 30 45,000 ± 30% BRASS -20 ~ +70 -30 ~ +80 n20 UNITS Hz Ohm Vp-p pF


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    UL1571 2011/65/EU AB2720B-LW100-R AB2720B-LW100-R PDF

    Untitled

    Abstract: No abstract text available
    Text: MECHANICAL DATA MLCC007 – OCTOBER 1994 FQ R-CDCC-N20 LEADLESS CERAMIC CHIP CARRIER 0.685 (17,40) 0.665 (16,89) 0.030 (0,76) MIN 0.357 (9,07) 0.343 (8,71) 0.092 (2,34) 0.069 (1,75) 10 11 0.028 (0,71) 0.022 (0,56) 0.008 (0,20) RAD TYP 0.608 (15,44) 0.592 (15,04)


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    MLCC007 R-CDCC-N20) PDF

    Untitled

    Abstract: No abstract text available
    Text: Materials: CuZn Plating: Nickel gal. n20 Material: 2,65 M16x1,5 Directive 2002/95/EC RoHS compliant DO NOT ALTER CAD DRAWING BY HAND Width across flats 18 Index: a 24.03.11 VF Ä3941 data sheet revised date drawn 19.09.08 appd. general tolerance: 0,0 0,00


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    M16x1 2002/95/EC 43K1A743 PDF

    2222a sot23

    Abstract: transistor 2222a
    Text: SO2222A  SMALL SIGNAL NPN TRANSISTOR • ■ ■ ■ Type M arking SO 2222A N20 SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS MEDIUM CURRENT SWITCHING AND GENERAL PURPOSE APPLICATIONS THE PNP COMPLEMENTARY TYPE IS


    Original
    SO2222A SO2907A OT-23 2222a sot23 transistor 2222a PDF

    n13 sot 65

    Abstract: n13 sot 23 marking N20 SO2222 SO2222A SO2907 SO2907A
    Text: SO2222 SO2222A SMALL SIGNAL NPN TRANSISTORS • ■ ■ ■ Type Marking SO2222 N13 SO 2222A N20 SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS MEDIUM CURRENT AF AMPLIFICATION AND SWITCHING PNP COMPLEMENTS ARE RESPECTIVELY


    Original
    SO2222 SO2222A SO2907 SO2907A OT-23 n13 sot 65 n13 sot 23 marking N20 SO2222 SO2222A SO2907A PDF

    SMD diode N20

    Abstract: IXFH58N20 30n20
    Text: Hi DIXYS V DSS HiPerFET Power MOSFETs IXFH/IXFM 42 N20 IXFH/IXFM 50 N20 N20 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Maximum Ratings Test Conditions V DSS T , - 25°C to 150°C 200 V Voa„ T , = 25°C to 150°C; RGS = 1 MS2


    OCR Scan
    IXFH58N20 50N20 42N20 58N20 58N20 O-247 H42N20 SMD diode N20 30n20 PDF

    Untitled

    Abstract: No abstract text available
    Text: □IXYS High Current MegaMOS FET IXTK 74 N20 IXTH 68 N20 V DSS ^D25 200 V 200 V 74 A 68 A D DS on 35 mQ 35 mQ N-Channel Enhancement Mode Preliminary data Symbol Maximum ratings Test conditions V DSS Td = 25°C to 150°C 200 V v DGR Td = 25°C to 150°C; RGS=1.0 M£2


    OCR Scan
    O-247AD 74N20 68N20 O-264 PDF

    1534F

    Abstract: 50n20
    Text: IXTH/IXTM 42 N20 IXTH/IXTM 50 N20 MegaMOS FET V " dss ^D25 200 V 200 V 42 A 50 A D DS on 60 mi2 45 mQ N-Channel Enhancement Mode Symbol Test Conditions V ' DSS T, = 2S°C to 150°C V„GR T, = 25°C to 150°C; Po Maximum Ratings = 1 M£i 200 V 200 V Continuous


    OCR Scan
    42N20 50N20 50N20 O-247 O-204 O-247 1534F PDF

    mq68

    Abstract: No abstract text available
    Text: OIXYS VDSS High Current MegaMOS FET IXTK 74 N20 IXTH 68 N20 200 V 200 V RDS on ^D25 74 A 35 mQ 68 A 35 mQ N-Channel Enhancement Mode Preliminary data Symbol Test conditions Maximum ratings VOSS Tj = 25 °C to150 °C 200 V V™ Tj = 25°C to 150°C; RGS= 1 .0 M il


    OCR Scan
    to150 74N20 68N20 O-247AD O-264 mq68 PDF

    54F74

    Abstract: F1024 SS02
    Text: Philips Semiconductors Military FAST Products Product specification Dual D-type flip-flop 54F74 DESCRIPTION ORDER CODE PACKAGE DESCRIPTION* 14-Pin Ceramic DIP 54F74/BCA GDIP1-T14 14-Pin Ceramic FlatPack 54F74/BDA GDFP-T14 20-Pin Ceramic LLCC 54F74/B2A CQCC2-N20


    OCR Scan
    54F74 14-Pin 54F74/BCA GDIP1-T14 54F74/BDA GDFP-T14 20-Pin 54F74/B2A CQCC2-N20 54F74 F1024 SS02 PDF