Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    N20 N21 FET Search Results

    N20 N21 FET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RJF0411JPD-00#J3 Renesas Electronics Corporation Thermal FETs Visit Renesas Electronics Corporation
    RJF0411JPD-01#J3 Renesas Electronics Corporation Thermal FETs Visit Renesas Electronics Corporation
    RJF0605JPV-00#Q7 Renesas Electronics Corporation Thermal FETs Visit Renesas Electronics Corporation
    ISL95901IRZ-T Renesas Electronics Corporation Integrated FET Regulators Visit Renesas Electronics Corporation
    ISL6146DFRZ Renesas Electronics Corporation Low Voltage ORing FET Controller Visit Renesas Electronics Corporation

    N20 N21 FET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    n20 n21 fet

    Abstract: 53E1 FDG6318PZ SC-70-6 SC70-6 dual transistors sc-70-6 N2 SC70 SC-70-6 zener 15v 27E4 55E-4
    Text: FDG6318PZ Dual P-Channel, Digital FET General Description Features These dual P-Channel logic level enhancement mode MOSFET are produced using Fairchild Semiconductor’s especially tailored to minimize on-state resistance. This device has been designed especially for bipolar digital


    Original     		PDF FDG6318PZ 1200m SC-70-6 n20 n21 fet 53E1 FDG6318PZ SC70-6 dual transistors sc-70-6 N2 SC70 SC-70-6 zener 15v 27E4 55E-4

    76129S

    Abstract: 76129P HUF76129P3 HUF76129S3S HUF76129S3ST TB334
    Text: HUF76129P3, HUF76129S3S Semiconductor Data Sheet 56A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs [ /Title These N-Channel power MOSFETs are manufactured using the HUF7 innovative UltraFET process. 6129P3 This advanced process technology


    Original     		PDF HUF76129P3, HUF76129S3S 6129P3 HUF76 129S3S 00e-4 90e-2 80e-1 76129S 76129P HUF76129P3 HUF76129S3S HUF76129S3ST TB334

    76145S

    Abstract: 76145P HUF76145P3 HUF76145S3S HUF76145S3ST TB334
    Text: HUF76145P3, HUF76145S3S Semiconductor Data Sheet 75A, 30V, 0.0045 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs [ /Title These N-Channel power MOSFETs HUF76 are manufactured using the 145P3, innovative UltraFET process. HUF76 This advanced process technology


    Original     		PDF HUF76145P3, HUF76145S3S HUF76 145P3, 145S3S 06e-3 71e-3 07e-2 12e-2 76145S 76145P HUF76145P3 HUF76145S3S HUF76145S3ST TB334

    76129D

    Abstract: 129D3 motor drive HUF76129D3 HUF76129D3S TB334
    Text: HUF76129D3, HUF76129D3S Semiconductor Data Sheet 20A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs [ /Title These N-Channel power MOSFETs HUF76 are manufactured using the innovative UltraFET process. 129D3, This advanced process technology


    Original     		PDF HUF76129D3, HUF76129D3S HUF76 129D3, HUF761 29D3S) 90e-2 80e-1 00e-1 76129D 129D3 motor drive HUF76129D3 HUF76129D3S TB334

    76132P

    Abstract: HUF76132P3 HUF76132S3S HUF76132S3ST TB334
    Text: HUF76132P3, HUF76132S3S Semiconductor Data Sheet 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs [ /Title These N-Channel power MOSFETs HUF76 are manufactured using the innovative UltraFET process. This 132P3, advanced process technology


    Original     		PDF HUF76132P3, HUF76132S3S HUF76 132P3, 132S3S low30V, 51e-2 03e-2 05e-2 76132P HUF76132P3 HUF76132S3S HUF76132S3ST TB334

    TC11E

    Abstract: 19E-9 FDP8870 RS21E
    Text: FDP8870_F085 N-Channel PowerTrench MOSFET 30V, 156A, 4.1mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low


    Original     		PDF FDP8870 O-220AB TC11E 19E-9 RS21E

    FDP047AN

    Abstract: FDH047AN08A0 FDI047AN08A0 FDP047AN08A0 FDH047AN08 FDH047AN FDP047
    Text: FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 N-Channel PowerTrench MOSFET 75V, 80A, 4.7mΩ Features Applications • rDS ON = 4.0mΩ (Typ.), VGS = 10V, ID = 80A • DC-DC converters and Off-line UPS • Qg(tot) = 92nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs


    Original     		PDF FDP047AN08A0 FDI047AN08A0 FDH047AN08A0 144oC, FDH047AN08A0 FDP047AN FDH047AN08 FDH047AN FDP047

    Untitled

    Abstract: No abstract text available
    Text: HUF75321D3ST Data Sheet 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75321D3ST

    Untitled

    Abstract: No abstract text available
    Text: FDP8870_F085 N-Channel PowerTrench MOSFET 30V, 156A, 4.1mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low


    Original     		PDF FDP8870

    tc150e3

    Abstract: KP235 40V 60A MOSFET
    Text: FDH038AN08A1 N-Channel PowerTrench MOSFET 75 V, 80 A, 3.8 m Ω Features Applications • R DS ON = 3.5 m Ω (Typ.), VGS = 10 V, ID = 80 A • Synchronous Rectification for ATX / Server / Telecom PSU • Qg(tot) = 125 nC (Typ.), VGS = 10 V • Battery Protection Circuit


    Original     		PDF FDH038AN08A1 FDH038AN08A1 O-247 158oC, tc150e3 KP235 40V 60A MOSFET

    Untitled

    Abstract: No abstract text available
    Text: HUF75645P3, HUF75645S3S October 2013 Data Sheet N-Channel UltraFET Power MOSFET 100 V, 75 A, 14 mΩ Packaging Features JEDEC TO-220AB JEDEC TO-263AB DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) • Ultra Low On-Resistance - rDS(ON) = 0.014Ω, VGS = 10V


    Original     		PDF HUF75645P3, HUF75645S3S O-220AB O-263AB HUF75645P3 HUF75645S3ST 75645P

    FDP3672

    Abstract: diode marking 41a on semiconductor marking n6
    Text: FDP3672 N-Channel PowerTrench MOSFET 105V, 41A, 33mΩ Features Applications • r DS ON = 25mΩ (Typ.), VGS = 10V, ID = 41A • DC/DC converters and Off-Line UPS • Qg(tot) = 28nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge


    Original     		PDF FDP3672 O-220AB FDP3672 diode marking 41a on semiconductor marking n6

    tc124e

    Abstract: No abstract text available
    Text: FDP8896_F085 N-Channel PowerTrench MOSFET 30V, 92A, 5.9mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low


    Original     		PDF FDP8896 tc124e

    N-Channel vgs 40V MOSFET

    Abstract: HUFA7510P3 HUFA7510S3S
    Text: HUFA7510P3, HUFA7510S3S Data Sheet A d van ce I n f o r m a tio n November 1999 File Number 4802 75A, 75V, 0.010 Ohm, N-Channel, UltraFET Power MOSFET [ /Title Packaging Features HUF76 JEDEC TO-220AB JEDEC TO-263AB • Ultra Low On-Resistance 400SK8 - rDS(ON = 0.010Ω, VGS = 10V


    Original     		PDF HUFA7510P3, HUFA7510S3S HUF76 O-220AB O-263AB 400SK8 NHUFA7510P3 N-Channel vgs 40V MOSFET HUFA7510P3 HUFA7510S3S

    Untitled

    Abstract: No abstract text available
    Text: HUF75631S3S October 2013 Data Sheet N-Channel UltraFET Power MOSFET 100 V, 33 A, 40 mΩ Packaging Features JEDEC TO-263AB DRAIN FLANGE GATE SOURCE • Ultra Low On-Resistance - rDS(ON) = 0.040Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER


    Original     		PDF HUF75631S3S O-263AB HUF75631S3ST 75631S HUF75631S3S

    Untitled

    Abstract: No abstract text available
    Text: HUFA75645S3S December 2001 Data Sheet N-Channel UltraFET Power MOSFET 100 V, 75 A, 14 mΩ Packaging Features JEDEC TO-263AB DRAIN FLANGE GATE SOURCE • Ultra Low On-Resistance - rDS(ON) = 0.014Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER


    Original     		PDF HUFA75645S3S O-263AB 75645S HUFA75645S3S

    FDP047AN08A0

    Abstract: FDH047AN08A0 fairchild s1a diode fdp047an
    Text: FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 N-Channel PowerTrench MOSFET 75V, 80A, 4.7mΩ Features Applications • rDS ON = 4.0mΩ (Typ.), VGS = 10V, ID = 80A • DC-DC converters and Off-line UPS • Qg(tot) = 92nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs


    Original     		PDF FDP047AN08A0 FDI047AN08A0 FDH047AN08A0 O-220AB O-262AB O-247 FDH047AN08A0 fairchild s1a diode fdp047an

    67E-3

    Abstract: FDI038AN06A0 FDP035AN06A0T FDP038AN06A0 DIODE N20 fdp038an06a0t
    Text: FDP038AN06A0 / FDI038AN06A0 N-Channel PowerTrench MOSFET 60V, 80A, 3.8mΩ Features Applications • rDS ON = 3.5mΩ (Typ.), VGS = 10V, ID = 80A • Motor / Body Load Control • Qg(tot) = 95nC (Typ.), VGS = 10V • ABS Systems • Low Miller Charge • Powertrain Management


    Original     		PDF FDP038AN06A0 FDI038AN06A0 O-220AB O-262AB 67E-3 FDI038AN06A0 FDP035AN06A0T DIODE N20 fdp038an06a0t

    TC143E

    Abstract: T 105 micro 25E3
    Text: FDP3672 N-Channel PowerTrench MOSFET 105 V, 41 A, 33 mΩ Features Applications • RDS on = 25 mΩ ( Typ.) @ VGS = 10 V, ID = 41 A • Consumer Appliances • QG(tot) = 28 nC ( Typ.) @ V GS = 10 V • Synchronous Rectification • Low Miller Charge • Battery Protection Circuit


    Original     		PDF FDP3672 FDP3672 O-220 TC143E T 105 micro 25E3

    Untitled

    Abstract: No abstract text available
    Text: HUF76132P3, HUF76132S3S Data Sheet 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs [ /Title These N-Channel power MOSFETs are manufactured using the HUF7 innovative UltraFET process. This 6132P advanced process technology 3, achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF76132P3, HUF76132S3S 6132P HUF76 132S3

    118E-2

    Abstract: KP120 TC292
    Text: HUF76132P3, HUF76132S3S Data Sheet 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs [ /Title These N-Channel power MOSFETs are manufactured using the HUF7 innovative UltraFET process. This 6132P advanced process technology 3, achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF76132P3, HUF76132S3S 6132P HUF76 132S3 118E-2 KP120 TC292

    Untitled

    Abstract: No abstract text available
    Text: HUF75842P3 October 2013 Data Sheet N-Channel UltraFET Power MOSFET 150 V, 43 A, 42 mΩ Packaging Features JEDEC TO-220AB SOURCE DRAIN GATE DRAIN FLANGE • Ultra Low On-Resistance - rDS(ON) = 0.042Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER


    Original     		PDF HUF75842P3 O-220AB 75842P HUF75842P3

    Untitled

    Abstract: No abstract text available
    Text: FDP038AN06A0 / FDI038AN06A0 N-Channel PowerTrench MOSFET 60V, 80A, 3.8mΩ Features Applications • rDS ON = 3.5mΩ (Typ.), VGS = 10V, ID = 80A • Motor / Body Load Control • Qg(tot) = 95nC (Typ.), VGS = 10V • ABS Systems • Low Miller Charge • Powertrain Management


    Original     		PDF FDP038AN06A0 FDI038AN06A0 O-220AB O-262AB

    Untitled

    Abstract: No abstract text available
    Text: HAJtms S HUF76129D3, HUF76129D3S S e m ic o n d u c to r 7 20A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs May 1998 | Features • Logic Level Gate Drive • 20A, 30V • Ultra Low On-Resistance, ros ON = 0.016£2 • Temperature Compensating PSPICE Model


    OCR Scan     		PDF HUF76129D3, HUF76129D3S O-252AA T0-252AA 330mm