PLCC pin configuration
Abstract: N28F256A type 32D N28F010 N28F020 N28F512
Text: CIC-32PL-32D-A6-YAM 32-Lead PLCC to a 32-Pin DIP 3/98 EXAMPLES PLCC DEVICES: N28F001BX N28F010 N28F020 N28F256A SOCKET: PIN CONFIGURATION: BASE 32-Pin DIP 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 N28F512 Yamaichi IC51-0324-4531
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Original
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CIC-32PL-32D-A6-YAM
32-Lead
32-Pin
N28F001BX
N28F010
N28F020
N28F256A
N28F512
IC51-0324-4531
PLCC pin configuration
N28F256A
type 32D
N28F010
N28F020
N28F512
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PDF
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N28F010
Abstract: N28F256A N28F020 N28F512 PLCC socket pin configuration n28f010 dimensions
Text: CIC-32PL-32D-A6-YAM 32-Lead PLCC to a 32-Pin DIP 7/97 EXAMPLES PLCC DEVICES: N28F001BX N28F010 N28F020 N28F256A SOCKET: PIN CONFIGURATION: BASE 32-Pin DIP 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 N28F512 Yamaichi IC51-0324-4531
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Original
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CIC-32PL-32D-A6-YAM
32-Lead
32-Pin
N28F001BX
N28F010
N28F020
N28F256A
N28F512
IC51-0324-4531
N28F010
N28F256A
N28F020
N28F512
PLCC socket pin configuration
n28f010 dimensions
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PDF
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8088 memory interface SRAM
Abstract: 28F010 microprocessor 80286 internal architecture intel 8086 intel microprocesser 8086 mcs 96 programming 64 pin microprocesser 8086 microprocessor introduction 2181G 8088 microprocessor
Text: E AP-380 APPLICATION NOTE Upgrading System Designs from Bulk Erase to Boot Block Flash Memories BRIAN DIPERT SENIOR TECHNICAL MARKETING ENGINEER August 1996 Order Number: 292129-002 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or
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Original
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AP-380
8088 memory interface SRAM
28F010
microprocessor 80286 internal architecture
intel 8086
intel microprocesser 8086
mcs 96 programming
64 pin microprocesser
8086 microprocessor introduction
2181G
8088 microprocessor
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PDF
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PLCC 32 intel package dimensions
Abstract: 845 bios chip intel 845 circuit diagram all chip TSOP 48 thermal resistance TSOP 48 LAYOUT ap623 am 28f040 AP-623 PCB Layout tsop 48 PIN SOCKET
Text: E AP-623 APPLICATION NOTE Multi-Site Layout Planning with Intel’s Boot Block Flash Memory December 1996 Order Number: 292178-003 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions of
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Original
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AP-623
AP-607
AB-57
AB-60
PLCC 32 intel package dimensions
845 bios chip
intel 845 circuit diagram all chip
TSOP 48 thermal resistance
TSOP 48 LAYOUT
ap623
am 28f040
AP-623
PCB Layout
tsop 48 PIN SOCKET
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PDF
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29212* intel
Abstract: No abstract text available
Text: in te i, A P ' 3 8 0 APPLICATION NOTE Upgrading System Designs from Bulk Erase to Boot Block Flash Memories BRIAN DIPERT SENIOR TECHNICAL MARKETING ENGINEER October 1993 I Order Number: 292129-001 Intel Corporation makes no warranty for the use of its products and assumes no responsibility for any errors
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OCR Scan
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28F256A
28F512
28F010
28F020
28F001BX
28F200BX/002BX
28F200BX-L/002BX-L
28F400BX/004BX
28F400BX-L/004BX-L
29212* intel
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PDF
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P28F001
Abstract: 29040 N28F001BX-T150 28F001BX-B 28F001BX-T
Text: intJ 28F001BX-T/28F001BX-B 1M 128K x 8 CMOS FLASH MEMORY • High Integration Blocked Architecture — One 8 KB Boot Block w/Lock Out — Two 4 KB Parameter Blocks — One 112 KB Main Block ■ High-Performance Read — 120 ns Maximum Access Time — 5.0V +10% Vcc
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OCR Scan
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28F001BX-T/28F001BX-B
32-Lead
28F001BX
P28F001
29040
N28F001BX-T150
28F001BX-B
28F001BX-T
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PDF
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XT150
Abstract: xt90
Text: in tj 28F001BX-T/28F001BX-B 1M 128K X 8 CMOS FLASH MEMORY High Integration Blocked Architecture — One 8 KB Boot Block w/Lock Out — Two 4 KB Parameter Blocks — One 112 KB Main Block High-Performance Read — 70/75 ns, 90 ns, 120 ns, 150 ns Maximum Access Time
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OCR Scan
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28F001BX-T/28F001BX-B
32-Lead
28F001BX
0154bHb
XT150
xt90
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PDF
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Untitled
Abstract: No abstract text available
Text: in te i 1-MBIT 128Kx 8 BOOT BLOCK FLASH MEMORY 28F001BX- T/28F001BX-B/28F001BN- T/28F001BN-B High-lntegration Blocked Architecture — One 8 KB Boot Block w /Lock Out — Two 4 KB Parameter Blocks — One 112 KB Main Block High-Performance Read — 70/75 ns, 90 ns, 120 ns, 150 ns
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OCR Scan
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128Kx
28F001BX-
T/28F001BX-B/28F001BN-
T/28F001BN-B
32-Lead
28F001BX
28F001
4fi2bl75
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PDF
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28F001
Abstract: intel 28F001BXT
Text: in t e i, 28F001BX-T/28F001BX-B 1M 128K x 8 CMOS FLASH MEMORY • High Integration Blocked Architecture — One 8KB Boot Block w/Lock Out — Two 4KB Parameter Blocks — One 112KB Main Block ■ 10,000 Erase/Program Cycles Minimum Per Block ■ Simplified Program and Erase
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OCR Scan
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28F001BX-T/28F001BX-B
112KB
32-Lead
28F001BX
28F001
intel 28F001BXT
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PDF
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N28F001BX-T150
Abstract: 28F001BX-B N28F001BX 120 intel 80c188 users manual
Text: in te i 28F001BX-T/28F001BX-B 1M 128K x 8 CMOS FLASH MEMORY • High Integration Blocked Archltecture — One 8KB Boot Block w/Lock Out — Two 4KB Parameter Blocks — One 112KB Main Block ■ 10,000 Erase/Program Cycles Minimum Per Block ■ Simplified Program and Erase
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OCR Scan
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28F001BX-T/28F001BX-B
112KB
32-Lead
28F001BX
N28F001BX-T150
28F001BX-B
N28F001BX 120
intel 80c188 users manual
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PDF
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P28F001
Abstract: 28F001BX-B 28F001BXB
Text: in te i • 1-MBIT 128K x 8 BOOT BLOCK FLASH MEMORY 28 F 0 0 1 B X - T /2 8 F 0 0 1 B X -B /2 8 F 0 0 1 B N - T /2 8 F 0 0 1 B N -B u High-Integration Blocked Architecture — One 8 KB Boot Block w/Lock Out — Two 4 KB Parameter Blocks — One 112 KB Main Block
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OCR Scan
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32-Pin
32-Lead
28F001BX
28F001
01bb04fl
P28F001
28F001BX-B
28F001BXB
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PDF
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INTEL ES
Abstract: p28f001 BXT150 28F001BX-B 28F001BX-T
Text: in te i 1-MBIT 128Kx 8 BOOT BLOCK FLASH MEMORY 2 8 F 0 0 1 B X - T /2 8 F 0 0 1 B X -B /2 8 F 0 0 1 B N - T /2 8 F 0 0 1 B N -B m High-lntegration Blocked Architecture — One 8 KB Boot Block w /Lock Out — Two 4 KB Parameter Blocks — One 112 KB Main Block
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OCR Scan
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128Kx
32-Lead
28F001BX
28F001
INTEL ES
p28f001
BXT150
28F001BX-B
28F001BX-T
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PDF
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