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    Abstract: N2N10L STN2N10L
    Text: N2N10L N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE ST N2N10L • ■ ■ ■ ■ ■ V DSS R DS on ID 100 V < 0.5 Ω 2 A TYPICAL RDS(on) = 0.35 Ω AVALANCHE RUGGED TECHNOLOGY SOT-223 CAN BE WAVE OR REFLOW SOLDERED AVAILABLE IN TAPE AND REEL ON


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    PDF STN2N10L N2N10L OT-223 OT-223 n2n10 N2N10L STN2N10L