Untitled
Abstract: No abstract text available
Text: VS-HFA08TA60CPbF, VS-HFA08TA60C-N3 www.vishay.com Vishay Semiconductors HEXFRED , Ultrafast Soft Recovery Diode, 2 x 4 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • Designed and JEDEC®-JESD47 qualified according to • Halogen-free -N3 only
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Original
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PDF
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VS-HFA08TA60CPbF,
VS-HFA08TA60C-N3
-JESD47
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VS-HFA08TA60CPbF, VS-HFA08TA60C-N3 www.vishay.com Vishay Semiconductors HEXFRED , Ultrafast Soft Recovery Diode, 2 x 4 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • Designed and JEDEC®-JESD47 qualified according to • Halogen-free -N3 only
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Original
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PDF
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VS-HFA08TA60CPbF,
VS-HFA08TA60C-N3
-JESD47
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: VS-HFA30PB120PbF, VS-HFA30PB120-N3 www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 30 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • Designed and JEDEC-JESD47 Base common cathode to BENEFITS •
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Original
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PDF
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VS-HFA30PB120PbF,
VS-HFA30PB120-N3
JEDEC-JESD47
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
Untitled
Abstract: No abstract text available
Text: VS-HFA15PB60PbF, VS-HFA15PB60-N3 www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 15 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • Compliant to RoHS Directive 2002/95/EC • Designed and JEDEC-JESD47
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Original
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PDF
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VS-HFA15PB60PbF,
VS-HFA15PB60-N3
2002/95/EC
JEDEC-JESD47
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
Untitled
Abstract: No abstract text available
Text: VS-HFA30PB120PbF, VS-HFA30PB120-N3 www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 30 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • Compliant to RoHS Directive 2002/95/EC • Designed and JEDEC-JESD47
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Original
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PDF
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VS-HFA30PB120PbF,
VS-HFA30PB120-N3
2002/95/EC
JEDEC-JESD47
O-247AC
VS-HFA30PB120.
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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Untitled
Abstract: No abstract text available
Text: VS-HFA15PB60PbF, VS-HFA15PB60-N3 www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 15 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • Designed and JEDEC-JESD47 qualified according to • Material categorization:
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Original
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PDF
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VS-HFA15PB60PbF,
VS-HFA15PB60-N3
JEDEC-JESD47
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
Untitled
Abstract: No abstract text available
Text: VS-HFA30PB120PbF, VS-HFA30PB120-N3 www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 30 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • Designed and JEDEC-JESD47 3 qualified according to • Material categorization:
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Original
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PDF
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VS-HFA30PB120PbF,
VS-HFA30PB120-N3
JEDEC-JESD47
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
Untitled
Abstract: No abstract text available
Text: VS-HFA16PB120PbF, VS-HFA16PB120-N3 www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 16 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • Designed and qualified according to JEDEC-JESD47 • Material categorization:
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Original
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PDF
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VS-HFA16PB120PbF,
VS-HFA16PB120-N3
JEDEC-JESD47
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
Untitled
Abstract: No abstract text available
Text: VS-HFA30PB120PbF, VS-HFA30PB120-N3 www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 30 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • Designed and JEDEC-JESD47 Base common cathode to BENEFITS •
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Original
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PDF
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VS-HFA30PB120PbF,
VS-HFA30PB120-N3
JEDEC-JESD47
O-247AC
VS-HFA30PB120.
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
Untitled
Abstract: No abstract text available
Text: VS-HFA30PB120PbF, VS-HFA30PB120-N3 www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 30 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • Designed and JEDEC-JESD47 Base common cathode to Available BENEFITS
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Original
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PDF
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VS-HFA30PB120PbF,
VS-HFA30PB120-N3
JEDEC-JESD47
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
Untitled
Abstract: No abstract text available
Text: VS-HFA16PB120PbF, VS-HFA16PB120-N3 www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 16 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • Designed and qualified according to JEDEC-JESD47 • Material categorization:
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Original
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PDF
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VS-HFA16PB120PbF,
VS-HFA16PB120-N3
JEDEC-JESD47
O-247AC
VS-HFA16PB120.
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
Untitled
Abstract: No abstract text available
Text: VS-HFA30PA60CPbF, VS-HFA30PA60C-N3 www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 2 x 15 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • Designed and JEDEC-JESD47 qualified according to • Material categorization:
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Original
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PDF
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VS-HFA30PA60CPbF,
VS-HFA30PA60C-N3
JEDEC-JESD47
O-247AC
VS-HFA30PA60C.
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
Untitled
Abstract: No abstract text available
Text: VS-HFA08PB60PbF, VS-HFA08PB60-N3 www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • Designed and qualified JEDEC-JESD47 3 according to • Material categorization:
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Original
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PDF
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VS-HFA08PB60PbF,
VS-HFA08PB60-N3
JEDEC-JESD47
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
237 DT2 transistor
Abstract: No abstract text available
Text: VS-HFA15PB60PbF, VS-HFA15PB60-N3 www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 15 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • Compliant to RoHS Directive 2002/95/EC • Designed and JEDEC-JESD47
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Original
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PDF
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VS-HFA15PB60PbF,
VS-HFA15PB60-N3
2002/95/EC
JEDEC-JESD47
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
237 DT2 transistor
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VS-HFA06TB120
Abstract: No abstract text available
Text: VS-HFA06TB120PbF, VS-HFA06TB120-N3 www.vishay.com Vishay Semiconductors HEXFRED , Ultrafast Soft Recovery Diode, 6 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • Compliant to RoHS Directive 2002/95/EC • Designed and JEDEC-JESD47
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Original
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PDF
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VS-HFA06TB120PbF,
VS-HFA06TB120-N3
2002/95/EC
JEDEC-JESD47
O-220AC
VS-HFA06TB120.
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
VS-HFA06TB120
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Untitled
Abstract: No abstract text available
Text: VS-HFA30PB120PbF, VS-HFA30PB120-N3 www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 30 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • Designed and JEDEC-JESD47 3 qualified according to • Material categorization:
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Original
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PDF
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VS-HFA30PB120PbF,
VS-HFA30PB120-N3
JEDEC-JESD47
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
Untitled
Abstract: No abstract text available
Text: VS-HFA08TA60CPbF, VS-HFA08TA60C-N3 www.vishay.com Vishay Semiconductors HEXFRED , Ultrafast Soft Recovery Diode, 2 x 4 A FEATURES • • • • Ultrafast and ultrasoft recovery Very low IRRM and Qrr Compliant to RoHS Directive 2002/95/EC Designed and qualified
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Original
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PDF
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VS-HFA08TA60CPbF,
VS-HFA08TA60C-N3
2002/95/EC
JEDEC-JESD47
O-220AB
VS-HFA08TA60C.
2011/65/EU
2002/95/EC.
2011/65/EU.
|
Untitled
Abstract: No abstract text available
Text: VS-HFA16TA60CPbF, VS-HFA16TA60C-N3 www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 2 x 8 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • Compliant to RoHS Directive 2002/95/EC • Designed and JEDEC-JESD47
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Original
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PDF
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VS-HFA16TA60CPbF,
VS-HFA16TA60C-N3
2002/95/EC
JEDEC-JESD47
O-220AB
VS-HFA16TA60C.
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
Untitled
Abstract: No abstract text available
Text: VS-HFA25PB60PbF, VS-HFA25PB60-N3 www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 25 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • Designed and JEDEC-JESD47 3 2 TO-247AC modified to Available Cathode
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Original
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PDF
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VS-HFA25PB60PbF,
VS-HFA25PB60-N3
JEDEC-JESD47
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
V 904 RL 805
Abstract: BFG520W N4 TAM transistor fp 1016 DIN45004B
Text: Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES BFG520W BFG520W/X; BFG520W/XR MARKING • High power gain TYPE NUMBER • Low noise figure BFG520W N3 • High transition frequency BFG520W/X N4 • Gold metallization ensures
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OCR Scan
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PDF
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BFG520W
BFG520W/X;
BFG520W/XR
OT343
OT343R
BFG520W/X
BFG520W/XR
7110fli
V 904 RL 805
N4 TAM
transistor fp 1016
DIN45004B
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2N3055 power amplifier circuit
Abstract: 2n3055 motorola 2N3055 NPN MOTOROLA POWER TRANSISTOR 2N3055 2n3055 circuit 2N3055 power circuit 2N3055 typical applications 2N3055-1 TRANSISTOR 2n3055 TRANSISTOR MJ2955
Text: MOTOROLA Order this document by 2N3055/D SEMICONDUCTOR TECHNICAL DATA NPN 2 N3 0 5 5 * Com plem entary Silicon Power Transistors PNP M J2955 . . . designed for general-purpose switching and amplifier applications. • • • ‘ Motorola Preferred Device
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OCR Scan
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PDF
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2N3055/D
J2955
2N3055 power amplifier circuit
2n3055 motorola
2N3055 NPN MOTOROLA POWER TRANSISTOR
2N3055
2n3055 circuit
2N3055 power circuit
2N3055 typical applications
2N3055-1
TRANSISTOR 2n3055
TRANSISTOR MJ2955
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Untitled
Abstract: No abstract text available
Text: HN3C10FU TOSHIBA TOSHIBA TRANSISTOR h SILICON NPN EPITAXIAL PLANAR TYPE N3 r 1 nFh VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) SYMBOL VCBO v CEO CHARACTERISTIC
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OCR Scan
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PDF
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HN3C10FU
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC4203 TOSHIBA TRANSISTOR SILICON EPITAXIAL PLANAR TYPE K f d ? n3 Unit in mm VIDEO OUTPUT FOR HIGH DEFINITION VDT HIGH SPEED SWITCHING APPLICATIONS • • • • High Transition Frequency : Pp = 400 MHz Typ. (VCE = 10 V, Ie = 70 mA) Low Output Capacitance
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OCR Scan
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PDF
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2SC4203
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J2955A
Abstract: MJ15015 MJ15016 2N3055A MJ2955A Mj2955 power transistor 2n3055 motorola 2N305 2N3055 NPN MOTOROLA POWER TRANSISTOR
Text: MOTOROLA Order this document by 2N3055A/D SEMICONDUCTOR TECHNICAL DATA NPN Com plem entary Silicon H igh-Pow er Transistors 2 N3 05 5A . . . PowerBase complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power
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OCR Scan
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PDF
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2N3055A/D
2N3055
MJ2955.
J2955A
J15016*
O-204AA
J2955A
MJ15015
MJ15016
2N3055A
MJ2955A
Mj2955 power transistor
2n3055 motorola
2N305
2N3055 NPN MOTOROLA POWER TRANSISTOR
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