n20 n21 fet
Abstract: 53E1 FDG6318PZ SC-70-6 SC70-6 dual transistors sc-70-6 N2 SC70 SC-70-6 zener 15v 27E4 55E-4
Text: FDG6318PZ Dual P-Channel, Digital FET General Description Features These dual P-Channel logic level enhancement mode MOSFET are produced using Fairchild Semiconductor’s especially tailored to minimize on-state resistance. This device has been designed especially for bipolar digital
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FDG6318PZ
1200m
SC-70-6
n20 n21 fet
53E1
FDG6318PZ
SC70-6
dual transistors sc-70-6
N2 SC70
SC-70-6 zener 15v
27E4
55E-4
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DN2535
Abstract: DN2535N3-G DN2535N5 DN2535N5-G 125OC H1 SOT-89
Text: DN2535 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► The Supertex DN2535 is a low threshold depletion mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate
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DN2535
DN2535
O-220,
DSFP-DN2535
A100907
DN2535N3-G
DN2535N5
DN2535N5-G
125OC
H1 SOT-89
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marking DN
Abstract: DN2535
Text: DN2535 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► The Supertex DN2535 is a low threshold depletion mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate
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DN2535
O-220,
DSFP-DN2535
A100907
marking DN
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DN2540N3-G
Abstract: DN2540N5-G DN2540N8-G DN5DW DN2540 DSFP-DN2540
Text: DN2540 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► The Supertex DN2540 is a low threshold depletion mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate
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DN2540
O-220,
O-243AA
OT-89)
O-243,
DSFP-DN2540
A101607
DN2540N3-G
DN2540N5-G
DN2540N8-G
DN5DW
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DN5DW
Abstract: DN2540 DSFP-DN2540 DN2540N3-G 125OC DN2540N5 DN2540N5-G DN2540N8-G
Text: DN2540 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► The Supertex DN2540 is a low threshold depletion mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate
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DN2540
DN2540
O-243,
DSFP-DN2540
A100907
DN5DW
DSFP-DN2540
DN2540N3-G
125OC
DN2540N5
DN2540N5-G
DN2540N8-G
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Untitled
Abstract: No abstract text available
Text: DN2535 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description The Supertex DN2535 is a low threshold depletion mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device
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DN2535
DN2535
DSFP-DN2535
B103108
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b0915
Abstract: No abstract text available
Text: DN2535 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► The Supertex DN2535 is a low threshold depletion mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate
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DN2535
DSFP-DN2535
B091508
b0915
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b1031
Abstract: 125OC DN2535 DN2535N3-G DN2535N5 DN2535N5-G orma
Text: DN2535 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► The Supertex DN2535 is a low threshold depletion mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate
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DN2535
DN2535
DSFP-DN2535
B103108
b1031
125OC
DN2535N3-G
DN2535N5
DN2535N5-G
orma
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H1 SOT-89 amplifier
Abstract: DN5DW DN2540 H1 marking SOT-89 transistor marking codes transistors a1 sot-89 marking n5 amplifier SOT-89 sot-89 MARKING CODE ab sot-89 marking N5 DN2540N3-G DN2540N5
Text: DN2540 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► The Supertex DN2540 is a low threshold depletion mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate
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DN2540
DN2540
DSFP-DN2540
B103108
H1 SOT-89 amplifier
DN5DW
H1 marking SOT-89 transistor
marking codes transistors a1 sot-89
marking n5 amplifier SOT-89
sot-89 MARKING CODE ab
sot-89 marking N5
DN2540N3-G
DN2540N5
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Untitled
Abstract: No abstract text available
Text: Supertex inc. DN2540 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► The Supertex DN2540 is a low threshold depletion mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate
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DN2540
DN2540
DSFP-DN2540
B041310
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H1 SOT-89 amplifier
Abstract: B0413 DN2540N5 DN5DW DN2540 DN2540N3-G DN2540N5-G DN2540N8-G SOT89 N5 MARKING CODE sot-89 marking N5
Text: Supertex inc. DN2540 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► The Supertex DN2540 is a low threshold depletion mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate
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DN2540
DN2540
DSFP-DN2540
B041310
H1 SOT-89 amplifier
B0413
DN2540N5
DN5DW
DN2540N3-G
DN2540N5-G
DN2540N8-G
SOT89 N5 MARKING CODE
sot-89 marking N5
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b0915
Abstract: n5 sot-89 DN2540N3-G sot-89 marking dn DN5DW
Text: DN2540 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► The Supertex DN2540 is a low threshold depletion mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate
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DN2540
DSFP-DN2540
B091508
b0915
n5 sot-89
DN2540N3-G
sot-89 marking dn
DN5DW
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e041
Abstract: No abstract text available
Text: Supertex inc. DN2540 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description The Supertex DN2540 is a low threshold depletion mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate
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DN2540
DN2540
DSFP-DN2540
B041310
e041
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tc150e3
Abstract: KP235 40V 60A MOSFET
Text: FDH038AN08A1 N-Channel PowerTrench MOSFET 75 V, 80 A, 3.8 m Ω Features Applications • R DS ON = 3.5 m Ω (Typ.), VGS = 10 V, ID = 80 A • Synchronous Rectification for ATX / Server / Telecom PSU • Qg(tot) = 125 nC (Typ.), VGS = 10 V • Battery Protection Circuit
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FDH038AN08A1
FDH038AN08A1
O-247
158oC,
tc150e3
KP235
40V 60A MOSFET
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FDP047AN08A0
Abstract: FDH047AN08A0 fairchild s1a diode fdp047an
Text: FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 N-Channel PowerTrench MOSFET 75V, 80A, 4.7mΩ Features Applications • rDS ON = 4.0mΩ (Typ.), VGS = 10V, ID = 80A • DC-DC converters and Off-line UPS • Qg(tot) = 92nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs
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FDP047AN08A0
FDI047AN08A0
FDH047AN08A0
O-220AB
O-262AB
O-247
FDH047AN08A0
fairchild s1a diode
fdp047an
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TC143E
Abstract: T 105 micro 25E3
Text: FDP3672 N-Channel PowerTrench MOSFET 105 V, 41 A, 33 mΩ Features Applications • RDS on = 25 mΩ ( Typ.) @ VGS = 10 V, ID = 41 A • Consumer Appliances • QG(tot) = 28 nC ( Typ.) @ V GS = 10 V • Synchronous Rectification • Low Miller Charge • Battery Protection Circuit
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FDP3672
FDP3672
O-220
TC143E
T 105 micro 25E3
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75E2
Abstract: fairchild s1a diode N8 Diode
Text: FDH038AN08A1 N-Channel PowerTrench MOSFET 75V, 80A, 3.8mΩ Features Applications • r DS ON = 3.5mΩ (Typ.), V GS = 10V, ID = 80A • DC-DC converters and Off-line UPS • Qg(tot) = 125nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs
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FDH038AN08A1
125nC
O-247
158oC,
30oC/W)
FDH038AN08A1
75E2
fairchild s1a diode
N8 Diode
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Untitled
Abstract: No abstract text available
Text: FDP3682 N-Channel PowerTrench MOSFET 100 V, 32 A, 36 mΩ Features Applications • RDS on = 32 mΩ ( Typ.) @ VGS = 10 V, ID = 32 A • Consumer Appliances • QG(tot) = 18.5 nC ( Typ.) @ VGS = 10 V • Synchronous Rectification • Low Miller Charge • Battery Protection Circuit
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FDP3682
O-220
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Untitled
Abstract: No abstract text available
Text: FDP16AN08A0 N-Channel PowerTrench MOSFET 75 V, 58 A, 16 mΩ Features Applications • RDS on = 13 mΩ ( Typ.) @ VGS = 10 V, ID = 58 A • Synchronous Rectification for ATX / Server / Telecom PSU • QG(tot) = 28 nC ( Typ.) @ VGS = 10 V • Battery Protection Circuit
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FDP16AN08A0
O-220
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Untitled
Abstract: No abstract text available
Text: FDP2572 N-Channel PowerTrench MOSFET 150 V, 29 A, 54 mΩ Features Applications • RDS on = 45 mΩ ( Typ.) @ VGS = 10 V, ID = 9 A • Consumer Appliances • QG(tot) = 26 nC ( Typ.) @ VGS = 10 V • Synchronous Rectification • Low Miller Charge • Battery Protection Circuit
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FDP2572
O-220
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Untitled
Abstract: No abstract text available
Text: FDP070AN06A0 N-Channel PowerTrench MOSFET 60 V, 80 A, 7 mΩ Features Applications • RDS on = 6.1 mΩ (Typ.) @ VGS = 10 V, ID = 80 A • Synchronous Rectification for ATX / Server / Telecom PSU • Qg(tot) = 51 nC (Typ.) @ VGS = 10 V • Battery Protection Circuit
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FDP070AN06A0
O-220
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Untitled
Abstract: No abstract text available
Text: FDP3672 N-Channel PowerTrench MOSFET 105 V, 41 A, 33 mΩ Features Applications • RDS on = 25 mΩ ( Typ.) @ VGS = 10 V, ID = 41 A • Consumer Appliances • QG(tot) = 28 nC ( Typ.) @ VGS = 10 V • Synchronous Rectification • Low Miller Charge • Battery Protection Circuit
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FDP3672
O-220
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Untitled
Abstract: No abstract text available
Text: FDP038AN06A0 / FDI038AN06A0 N-Channel PowerTrench MOSFET 60 V, 80 A, 3.8 mΩ Features Applications • RDS on = 3.5 mΩ ( Typ.) @ VGS = 10 V, ID = 80 A • Synchronous Rectification for ATX / Server / Telecom PSU • QG(tot) = 96 nC ( Typ.) @ VGS = 10 V
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FDP038AN06A0
FDI038AN06A0
O-220
FDP038AN06A0
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Untitled
Abstract: No abstract text available
Text: FDP42AN15A0 N-Channel PowerTrench MOSFET 150 V, 35 A, 42 mΩ Features Applications • RDS on = 36 mΩ ( Typ.) @ VGS = 10 V, ID = 12 A • Consumer Appliances • QG(tot) = 33 nC ( Typ.) @ VGS = 10 V • Synchronous Rectification • Low Miller Charge
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FDP42AN15A0
O-220
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