transistor marking N1
Abstract: marking CODE n3 NRD4007 marking n4 n1 MARKing NRD4003 sma flat NSD12 NSD15 NRD4004
Text: 02/22/2006 www.niccomp.com | tech support: tpmg@niccomp.com COMPONENT MARKING PRODUCTS: SMT DIODES SERIES: NRD & NSD TYPE: SMA SIZE FLAT CHIP RECTIFIER DIODES NIC SERIES: NRD N1 PART NUMBER CODE: N1 = NRD4001, N2 = NRD4002, N3 = NRD4003, N4 = NRD4004 N5 = NRD4005, N6 = NRD4006, N7 = NRD4007
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NRD4001,
NRD4002,
NRD4003,
NRD4004
NRD4005,
NRD4006,
NRD4007
NSD12,
NSD13,
NSD14,
transistor marking N1
marking CODE n3
NRD4007
marking n4
n1 MARKing
NRD4003
sma flat
NSD12
NSD15
NRD4004
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Untitled
Abstract: No abstract text available
Text: KSM038AN06A0 / KSMI038AN06A0 TO-220AB Features TO-262AB D = 80A • r DS ON = 3.5mΩ (Typ.), V GS = 10V, I • Qg(tot) = 95nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101
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KSM038AN06A0
KSMI038AN06A0
O-220AB
O-262AB
24e-3
08e-3
28e-2
FDP035AN06A0T
45e-3
65e-2
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n13 sot 65
Abstract: FDT461N 29e8 RS80 marking 461 m067
Text: FDT461N N-Channel Logic Level PowerTrench MOSFET 100V, 0.4A, 2.5Ω Features Applications • rDS ON = 1.45Ω (Typ.), VGS = 4.5V, ID = 0.4A • Servo Motor Load Control • Qg(tot) = 2.36nC (Typ.), VGS = 10V • DC-DC converters • Low Miller Charge • Low QRR Body Diode
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FDT461N
OT-223
110oC/W)
n13 sot 65
FDT461N
29e8
RS80
marking 461
m067
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FDN363N
Abstract: N6 marking diode marking n9
Text: Preliminary FDN363N N-Channel PowerTrench MOSFET 100V, 1A, 240mΩ Features Applications • r DS ON = 200mΩ (Typ.), VGS = 10V, ID = 1A • DC/DC converters • Qg(tot) = 4nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse)
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FDN363N
250oC/W
FDN363N
N6 marking diode
marking n9
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m079
Abstract: HUFA75433S3S HUFA75433S3ST Marking N8 KP26
Text: HUFA75433S3S N-Channel UltraFET MOSFETs 60V, 64A, 16mΩ General Description Applications These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves very low on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse
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HUFA75433S3S
m079
HUFA75433S3S
HUFA75433S3ST
Marking N8
KP26
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76404DK8
Abstract: HUFA76404DK8T RG103 KP108
Text: HUFA76404DK8T N-Channel Dual MOSFET 62V, 3.2A, 132mΩ Features Applications rDS ON = 110mΩ (Typ.), VGS = 5V, ID = 3.2A Motor / Body Load Control Qg(tot) = 3.8nC (Typ.), VGS = 5V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode
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HUFA76404DK8T
HUFA76404DK8T
76404DK8
RG103
KP108
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HUFA76404DK8T
Abstract: NL103
Text: HUFA76404DK8T N-Channel MOSFET 62V, 3.2A, 132mΩ Features Applications • rDS ON = 110mΩ (Typ.), VGS = 5V, ID = 3.2A • Motor / Body Load Control • Qg(tot) = 3.6nC (Typ.), VGS = 5V • ABS Systems • Low Miller Charge • Powertrain Management • Low QRR Body Diode
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HUFA76404DK8T
HUFA76404DK8T
NL103
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13E1
Abstract: No abstract text available
Text: HUFA76404DK8T N-Channel MOSFET 62V, 3.2A, 132mΩ Features Applications • rDS ON = 110mΩ (Typ.), VGS = 5V, ID = 3.2A • Motor / Body Load Control • Qg(tot) = 3.6nC (Typ.), VGS = 5V • ABS Systems • Low Miller Charge • Powertrain Management • Low QRR Body Diode
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HUFA76404DK8T
13E1
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micro SD card CARD PCB FOOTPRINT
Abstract: EMIF06-MSD02N16 micro sd card circuit diagram for spi mode MICRO SD card footprint PCB SD card CARD PCB FOOTPRINT SD card footprint PCB micro sd card circuit diagram JESD97 N6 marking diode
Text: EMIF06-MSD02N16 6-line IPAD , EMI filter and ESD protection Features High design flexibility • Lead free package ■ Very low PCB space consumption: 3.5 mm x 1.2 mm ■ Very thin package: 0.5 mm ■ High efficiency in ESD suppression ■ IEC 61000-4-2 level 4
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EMIF06-MSD02N16
micro SD card CARD PCB FOOTPRINT
EMIF06-MSD02N16
micro sd card circuit diagram for spi mode
MICRO SD card footprint PCB
SD card CARD PCB FOOTPRINT
SD card footprint PCB
micro sd card circuit diagram
JESD97
N6 marking diode
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SD card CARD PCB FOOTPRINT
Abstract: SD card footprint PCB
Text: EMIF06-MSD02N16 6-line IPAD , EMI filter and ESD protection Features High design flexibility • Lead free package ■ Very low PCB space consumption: 3.5 mm x 1.2 mm ■ Very thin package: 0.5 mm ■ High efficiency in ESD suppression ■ IEC 61000-4-2 level 4
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EMIF06-MSD02N16
SD card CARD PCB FOOTPRINT
SD card footprint PCB
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N6 marking diode
Abstract: zener diode n8 n2 Diode Zener diode marking N9 M7 zener diode MARKING CODE N0 Marking N8 ZENER DIODE n2 sod marking m7 cmoz8l2
Text: Central CMOZ2L4 THRU CMOZ43L TM Semiconductor Corp. SURFACE MOUNT ULTRAmini LOW LEVEL SILICON ZENER DIODE 2.4 VOLTS THRU 43 VOLTS 250mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOZ2L4 Series Low Level Zener Diode is a high quality voltage regulator in an epoxy-molded
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CMOZ43L
250mW,
OD-523
CMOZ16L
CMOZ18L
CMOZ20L
CMOZ22L
CMOZ24L
CMOZ27L
CMOZ30L
N6 marking diode
zener diode n8
n2 Diode Zener
diode marking N9
M7 zener diode
MARKING CODE N0
Marking N8
ZENER DIODE n2
sod marking m7
cmoz8l2
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N6 marking diode
Abstract: SOD marking N1 diode marking N9 MARKING CODE N0 zener diode n8
Text: Central CMOZ2L4 THRU CMOZ43L TM Semiconductor Corp. SURFACE MOUNT ULTRAmini LOW LEVEL SILICON ZENER DIODE 2.4 VOLTS THRU 43 VOLTS 350mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOZ2L4 Series Low Level Zener Diode is a high quality voltage regulator in an epoxy-molded
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CMOZ43L
350mW,
OD-523
CMOZ16L
CMOZ18L
CMOZ20L
CMOZ22L
CMOZ24L
CMOZ27L
CMOZ30L
N6 marking diode
SOD marking N1
diode marking N9
MARKING CODE N0
zener diode n8
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zener diode n8
Abstract: Diode marking m7 N6 marking diode L9 Zener M7 zener zener n7 sod marking m7 n2 Diode Zener M7 zener diode CMOZ11L
Text: CMOZ1L8 THRU CMOZ47L SURFACE MOUNT LOW LEVEL SILICON ZENER DIODE 1.8 VOLTS THRU 47 VOLTS 250mW, 5% TOLERANCE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOZ1L8 Series Low Level Zener Diode is a high quality voltage regulator in an epoxy-molded ULTRAmini package,
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CMOZ47L
250mW,
OD-523
CMOZ22L
CMOZ24L
CMOZ27L
CMOZ30L
CMOZ33L
CMOZ36L
CMOZ39L
zener diode n8
Diode marking m7
N6 marking diode
L9 Zener
M7 zener
zener n7
sod marking m7
n2 Diode Zener
M7 zener diode
CMOZ11L
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Diode marking m7
Abstract: L9 zener zener diode n8 M7 zener ZENER DIODE M5 diode MARKING CODE P9 n2 Diode Zener marking code M6 marking CODE n3 marking CODE n5
Text: Central CMOZ1L8 THRU CMOZ47L TM Semiconductor Corp. SURFACE MOUNT ULTRAmini LOW LEVEL SILICON ZENER DIODE 1.8 VOLTS THRU 47 VOLTS 250mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOZ1L8 Series Low Level Zener Diode is a high quality voltage regulator in an epoxy-molded
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CMOZ47L
250mW,
OD-523
CMOZ22L
CMOZ24L
CMOZ27L
CMOZ30L
CMOZ33L
CMOZ36L
CMOZ39L
Diode marking m7
L9 zener
zener diode n8
M7 zener
ZENER DIODE M5
diode MARKING CODE P9
n2 Diode Zener
marking code M6
marking CODE n3
marking CODE n5
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DDTA144ELP
Abstract: DDTC144ELP DDTC144ELP-7 DFN1006-3 marking K
Text: DDTC144ELP PRE-BIASED R1=R2 SMALL SIGNAL SURFACE MOUNT 100mA NPN TRANSISTOR • • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available (DDTA144ELP) Ultra-Small Leadless Surface Mount Package Ideally Suited for Automated Assembly Processes
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DDTC144ELP
100mA
DDTA144ELP)
AEC-Q101
DFN1006-3
J-STD-020C
DS31245
DDTA144ELP
DDTC144ELP
DDTC144ELP-7
DFN1006-3
marking K
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Diode marking m7
Abstract: zener diode n8 zener diode M7 M7 zener CMOZ10L CMOZ11L CMOZ12L CMOZ13L CMOZ15L CMOZ16L
Text: Central CMOZ2L4 THRU CMOZ43L TM Semiconductor Corp. ULTRAmini LOW LEVEL ZENER DIODE 2.4 VOLTS THRU 43 VOLTS 350mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOZ2L4 Series Low Level Zener Diode is a high quality voltage regulator in an epoxy-molded
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CMOZ43L
350mW,
OD-523
IMPEDANC18
CMOZ20L
CMOZ22L
CMOZ24L
CMOZ27L
CMOZ30L
CMOZ33L
Diode marking m7
zener diode n8
zener diode M7
M7 zener
CMOZ10L
CMOZ11L
CMOZ12L
CMOZ13L
CMOZ15L
CMOZ16L
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ZENER DIODE M5
Abstract: zener diode n8 Diode marking m7 zener n7 diode 24 M7 zener marking of m7 diodes N6 marking code zener diode M7 n2 Diode Zener
Text: Central CMOZ2L4 THRU CMOZ43L TM Semiconductor Corp. ULTRAmini LOW LEVEL ZENER DIODE 2.4 VOLTS THRU 43 VOLTS 350mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOZ2L4 Series Low Level Zener Diode is a high quality voltage regulator in an epoxy-molded
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CMOZ43L
350mW,
OD-523
CMOZ20L
CMOZ22L
CMOZ24L
CMOZ27L
CMOZ30L
CMOZ33L
CMOZ36L
ZENER DIODE M5
zener diode n8
Diode marking m7
zener n7
diode 24
M7 zener
marking of m7 diodes
N6 marking code
zener diode M7
n2 Diode Zener
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Untitled
Abstract: No abstract text available
Text: DDTC144ELP PRE-BIASED R1=R2 SMALL SIGNAL SURFACE MOUNT 100mA NPN TRANSISTOR • • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available (DDTA144ELP) Ultra-Small Leadless Surface Mount Package Ideally Suited for Automated Assembly Processes
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DDTC144ELP
100mA
DDTA144ELP)
AEC-Q101
DFN1006-3
J-STD-020C
DS31245
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mosfet marking code N9
Abstract: mosfet marking code KP FDP8896
Text: FDP8896 N-Channel PowerTrench MOSFET 30V, 92A, 5.9mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low
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FDP8896
O-220AB
FDP8896
O-220-3
mosfet marking code N9
mosfet marking code KP
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2511NZ
Abstract: FDW2511NZ dual mosfet tt 6 pin Diode N7 S2 2511N 6 pin diode n10
Text: FDW2511NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 7.1A, 20V General Description rDS ON =0.020Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance
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FDW2511NZ
FDW2511NZ
2511NZ
dual mosfet tt 6 pin
Diode N7 S2
2511N
6 pin diode n10
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Untitled
Abstract: No abstract text available
Text: FDW2511NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 7.1A, 20V General Description rDS ON =0.020Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance
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FDW2511NZ
FDW2511NZ
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FDP8874
Abstract: 38e6
Text: FDP8874 N-Channel PowerTrench MOSFET 30V, 114A, 5.3mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low
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FDP8874
O-220AB
FDP8874
38e6
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p6 code marking for diode
Abstract: diode MARKING CODE P9 Diode marking m7 n1 a marking cmoz4l7 zener diode n8
Text: Central" MOZ2L4 THRU CMOZ43L Semiconductor Corp. SURFACE MOUNT ULTRAmini“ LOW LEVEL SILICON ZENER DIODE 2.4 VOLTS THRU 43 VOLTS 350mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEM ICONDUCTOR CMOZ2L4 Series Low Level Zener Diode is a high quality voltage regulator
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CMOZ43L
350mW,
IMPE50
OD-523
13-November
p6 code marking for diode
diode MARKING CODE P9
Diode marking m7
n1 a marking
cmoz4l7
zener diode n8
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Zener Diode SOD523 24v
Abstract: marking code zener diode A SOD523 sod marking m7 zener diode n8 M7 marking diode sod m7 M7 zener diode diode marking N9
Text: Central" CMOZ2L4 THRU CMOZ43L Semiconductor Corp. SURFACE MOUNT ULTRAmini LOW LEVEL SILICON ZENER DIODE 2.4 VOLTS THRU 43 VOLTS 250mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOZ2L4 Series Low Level Zener Diode is a high quality voltage regulator in an
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OCR Scan
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PDF
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CMOZ43L
250mW,
OD-523
OD-523
11-August
Zener Diode SOD523 24v
marking code zener diode A SOD523
sod marking m7
zener diode n8
M7 marking diode
sod m7
M7 zener diode
diode marking N9
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