N7 TRANSISTOR Search Results
N7 TRANSISTOR Result Highlights (5)
Part |
ECAD Model |
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Description |
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BLA1011-2 |
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Avionics LDMOS transistor |
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RX1214B300YI |
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RX1214B300Y - Microwave Power Transistor |
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CA3127MZ |
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CA3127 - Transistor Array |
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RX1214B130YI |
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NPN microwave power transistor |
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MX0912B251Y |
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NPN microwave power transistor |
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N7 TRANSISTOR Datasheets Context Search
Catalog Datasheet |
Type |
Document Tags |
PDF |
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RS468
Abstract: transistor dg sot-23 BENT LEAD transistor TO-92 Outline Dimensions P005 n7 transistor P012 B W4 Transistor GP007 transistor W4 sot-23
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O-220 O-243 OT-89) OT-23 RS468 transistor dg sot-23 BENT LEAD transistor TO-92 Outline Dimensions P005 n7 transistor P012 B W4 Transistor GP007 transistor W4 sot-23 | |
2SC4849Contextual Info: h7 /'Transistors 2SC4849 2SC4849 1 1°$ * y 7 & 7V - 1M NPN v >J n > N7 > y 2 S Epitaxial Planar NPN Silicon Transistor X < y -?•> “i? b =£' a lx — £ /Switching Regulator • ^ j i / D i m e n s i o n s U n it: mm tf= 0 .1 8 (Typ.) ( lc = 5 A ) |
OCR Scan |
2SC4849 2SC4849 100ms) | |
2sa154
Abstract: 251C 2SA1547 2SA937M 2SC2021M 2SC401
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OCR Scan |
0D0S427 2SA937M/2SA1547 27-Oc) 100mA, 300mW 2SC2021M/2SC40101 -100mA. 300mW. 2SC2021M, 2SC401Ã 2sa154 251C 2SA1547 2SA937M 2SC2021M 2SC401 | |
Contextual Info: ROHM CO L T D N7 " 4QE D • □□□SbSb /Transistors — '“ 2SB1334 “ ¿ g T ■RHM — — — 7^ 5 3 - / 9 î £ ° $ * y 7 J l ' 7 ° U - t & P N P y lJ 3 > b ÿ > y Z $ Mffl'tâWJjtmtymM/Low Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor |
OCR Scan |
2SB1334 | |
2SB1329
Abstract: 2SD2005
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OCR Scan |
2SD2005 500mA/50mA) 2SB1329 2SB1329. 2SB1329 2SD2005 | |
2SD1763
Abstract: 2Sb1186 2SD1763 transistor
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OCR Scan |
2SD1763 2SB1186 O-220FP SC-67 Para60 2SD1763 2SD1763 transistor | |
xi 1507
Abstract: Transistor 1507 tA 1507
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OCR Scan |
RN1507-RN1509 RN2507- RN1907 RN1908 RN1909 RN1508 RN1507 xi 1507 Transistor 1507 tA 1507 | |
brake rectifier motor
Abstract: dc chopper circuit ANS5 diode x18
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brake rectifier motor
Abstract: DIODE N7
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PSDI 50
Abstract: Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode
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Contextual Info: ROHM CO LT D 40E D B T ô a û T ïT 0D0Sfc.03 K ÿ > y X £ /Transistors 1 BIR HM 2SB1291 7 -3 3 -/7 1 1 ° £ * V 7 ^ 7 ° U - * pNP y 'J □ > N7 > y * ^ '®:üM®^JiHllIlÆ /L o w Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor 2 • ÿ fffÎ^ jÈ lS /D im e n sio n s Unit: mm |
OCR Scan |
2SB1291 2SD1720 | |
Contextual Info: ROHM CO LTD N7 > V 4DE D 000SA04 8 E3RHM $ / T ransistors 2SC3969 7 - 2 1 . - 0 ¡3 S H M i £ i & 7 ° U - ^ N y 3-> P N y ' j 3 > h 7 > y 7 J $ raiSiJE^ < “^ ffl/High Voltage Switching Triple Diffused Planar NPN Silicon Transistor • W fi\f';i|3 ]/'D in ie n s io n s U n it: mm |
OCR Scan |
000SA04 2SC3969 50/iS | |
lg washing machine control circuit
Abstract: gp1uv701
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OCR Scan |
V70QS00F GP1UV70QS00F 10Opcs. 400pcs/packing lg washing machine control circuit gp1uv701 | |
d1758Contextual Info: ROHM CO L T » N7 > vT , L<0E D $/J ransistors P 5 Freq. Power Amp. Epitaxial Planar NPN Silicon Transistors W ë ’tfiâ lll/ D im e n s io n s Unit : mm « f t 1) V ce o = 3 2 V, Ic m a x = 2 A, P c m a x= 1 O W O iH J f l £ 2) 2S B 1 1 8 2 i : a V j V v J iT |
OCR Scan |
2SD1758/2SD1758F5 2SB1182. D1758/ D1758F d1758 | |
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Contextual Info: TOSHIBA MP4207 TOSHIBA PO W ER MOS FET MODULE SILICON N & P CHANNEL MOS TYPE L2-tt-MOS1V 4 IN 1 MP a n7 i IN D U S T R IA L A P P L IC A T IO N S U n it in mm O HIGH POW ER HIGH SPEED SWITCHING APPLICATIONS. O H - SWITCH DRIVER • 4-V o lt G ate D rive. |
OCR Scan |
MP4207 | |
n7 transistor
Abstract: marking n5 amplifier N6 Amplifier marking n6 transistor amplifier marking code n6 transistor N6 marking N7 2SC1654 sot-23 Marking N5 Marking N5
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2SC1654 OT-23 BL/SSSTC096 n7 transistor marking n5 amplifier N6 Amplifier marking n6 transistor amplifier marking code n6 transistor N6 marking N7 2SC1654 sot-23 Marking N5 Marking N5 | |
N1702
Abstract: 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922
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OCR Scan |
2N34A 2N43A 2N44A 2N59A 2N59B 2N59C 2N60A 2N60B 2N60C 2N61A N1702 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922 | |
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SC1654 TRANSISTOR NPN SOT–23 FEATURES High Frequency Power Amplifier Application Power Swithing Applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) |
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OT-23 2SC1654 | |
Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z 2SC1654 Pb High DC current gain:hFE=130 Typ Lead-free (VCE=3V,IC=15mA) z High voltage. APPLICATIONS z Audio frequency general purpose amplifier applications. SOT-23 |
Original |
2SC1654 OT-23 BL/SSSTC096 | |
n7 transistor
Abstract: LDTC113ZET1G SC-89 N7110
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LDTC113ZET1G SC-89 463C-01 463C-02. n7 transistor LDTC113ZET1G SC-89 N7110 | |
LDTC113ZET1GContextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTC113ZET1G S-LDTC113ZET1G • Applications Inverter, Interface, Driver • Features 1 Built-in bias resistors enable the configuration of an |
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LDTC113ZET1G S-LDTC113ZET1G SC-89 463C-01 463C-02. LDTC113ZET1G | |
n7 transistor
Abstract: sot 323 marking code n7 marking N7 LDTC113ZWT1G sot323 marking n7
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LDTC113ZWT1G n7 transistor sot 323 marking code n7 marking N7 LDTC113ZWT1G sot323 marking n7 | |
SOT23 W1P
Abstract: MARKING W1P transistor w1P MARKING W2 SOT23 marking code R2 sot23 marking code w2 sot23 marking code W1p marking code P2p SOT23 marking W1 sot23 marking code w2 sot323
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BF547 BF547W BF747 BFC505 OT323 OT353 OT143 SOT23 W1P MARKING W1P transistor w1P MARKING W2 SOT23 marking code R2 sot23 marking code w2 sot23 marking code W1p marking code P2p SOT23 marking W1 sot23 marking code w2 sot323 | |
SOT23 W1P
Abstract: BFG540 N43 SOT89 MARKING CODE "W1P" MARKING W1P sot143 Marking code p1 PSH10 sot143 sot343 marking code V3 w1p code
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OCR Scan |
BF547 BF547W BF689K BF747 BF763 BFC505 BFC520 BFE505 BFE520 BFG10 SOT23 W1P BFG540 N43 SOT89 MARKING CODE "W1P" MARKING W1P sot143 Marking code p1 PSH10 sot143 sot343 marking code V3 w1p code |