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    N8 PACKAGE DIMENSION Search Results

    N8 PACKAGE DIMENSION Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    N8 PACKAGE DIMENSION Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TO-243

    Abstract: No abstract text available
    Text: Package Outline 3-Lead TO-243AA SOT-89 Package Outline (N8) b Symbol Dimensions (mm) b1 A b b1 C D D1 E E1 MIN 1.40 0.44 0.36 0.35 4.40 1.62 2.29 2.13 NOM - - - - - - - - MAX 1.60 0.56 0.48 0.44 4.60 1.83 2.60 2.29 e e1 1.50 BSC 3.00 BSC H L 3.94 0.89 -


    Original     		PDF O-243AA OT-89) O-243, DSPD-3TO243AAN8, D070908. DSPD-3TO243AAN8 D070908 TO-243

    S8 Package

    Abstract: Diode LT 228 LT 076 LT1016 N8 package Dimension lt 0229 LTC DWG 05-08-1610
    Text: SPECIFICATION NOTICE LT1016 October 1997 The LT 1016 data sheet has been modified. The packaging information has been updated. Change TJMAX for the N8 package and the S8 package from 100°C to 125°C. Change θJA for the S8 package from 120°C/W to 150°C/W. Also, omit Note #2 for the S8 package, ”LEAD


    Original     		PDF LT1016 152mm) 254mm) S8 Package Diode LT 228 LT 076 LT1016 N8 package Dimension lt 0229 LTC DWG 05-08-1610

    DSPD-3TO243AAN8

    Abstract: No abstract text available
    Text: Package Outline 3-Lead TO-243AA SOT-89 Package Outline (N8) b Symbol Dimensions (mm) b1 A b b1 C D D1 E E1 MIN 1.40 0.44 0.36 0.35 4.40 1.62 2.29 2.00 NOM - - - - - - - - MAX 1.60 0.56 0.48 0.44 4.60 1.83 2.60 2.29 e e1 1.50 BSC 3.00 BSC † H L 3.94 0.89


    Original     		PDF O-243AA OT-89) O-243, DSPD-3TO243AAN8, E051509. DSPD-3TO243AAN8 E051509 DSPD-3TO243AAN8

    a807

    Abstract: 7272 TO-243AA
    Text: Package Outlines 3 LEAD TO-243AA SOT-89 Surface Mount Package (N8) 0.177 ± 0.004 (4.4958 ± 0.1016) 0.068 ± 0.004 (1.7272 ± 0.1016) 0.059 ± 0.004 (1.4986 ± 0.1016) D A D1 0.161 ± 0.006 (4.0894 ± 0.1524) H 0.096 ± 0.006 (2.4384 ± 0.1524) E 0.041 ± 0.006


    Original     		PDF O-243AA OT-89) DSPD-3TO243AAN8 A052404 a807 7272 TO-243AA

    TO-243AA

    Abstract: PO23 jedec Package LND150N8 equivalent PO24 LND150N8 TO243AA
    Text: Package Outlines .173 .181 .064 .072 .155 .167 .035 .047 1 2 .014 .019 .055 .063 3 .090 .102 .017 .022 .059 BSC .014 .017 .084 .090 1-Gate 2-Drain 3-Source .118 BSC For LND150N8 only: 1-Gate 2-Source 3-Drain TO-243AA SOT-89 Surface Mount "N8" Package 17


    Original     		PDF LND150N8 O-243AA OT-89) OT-89 O-243AA) suf017 TO-243AA PO23 jedec Package LND150N8 equivalent PO24 TO243AA

    Untitled

    Abstract: No abstract text available
    Text: N8 Package 8-Lead PDIP Narrow .300 Inch (Reference LTC DWG # 05-08-1510) .400* (10.160) MAX 8 7 6 5 1 2 3 4 .255 ± .015* (6.477 ± 0.381) .300 – .325 (7.620 – 8.255) .008 – .015 (0.203 – 0.381) ( +.035 .325 –.015 8.255 +0.889 –0.381 NOTE: 1. DIMENSIONS ARE


    Original     		PDF 254mm)

    Untitled

    Abstract: No abstract text available
    Text: LT1169 Dual Low Noise, Picoampere Bias Current, JFET Input Op Amp DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ Input Bias Current, Warmed Up: 20pA Max 100% Tested Low Voltage Noise: 8nV/√Hz Max S8 and N8 Package Standard Pinout Very Low Input Capacitance: 1.5pF


    Original     		PDF LT1169 110kHz, LT1113 LT1462 LT1464 95035-7417q 434-0507q 1169fa

    IC OP AMP for Piezoelectric transducers

    Abstract: hydrophone transducer LT1169CS8 servo accelerometer 1N914 2N3904 LT1113 LT1169 LT1169CN8 S1336-5BK
    Text: LT1169 Dual Low Noise, Picoampere Bias Current, JFET Input Op Amp U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ Input Bias Current, Warmed Up: 20pA Max 100% Tested Low Voltage Noise: 8nV/√Hz Max S8 and N8 Package Standard Pinout Very Low Input Capacitance: 1.5pF


    Original     		PDF LT1169 110kHz, LT1113 LT1462 LT1464 95035-7417q 434-0507q 1169fa IC OP AMP for Piezoelectric transducers hydrophone transducer LT1169CS8 servo accelerometer 1N914 2N3904 LT1113 LT1169 LT1169CN8 S1336-5BK

    4384

    Abstract: 7272 LND150N8
    Text: Package Outlines TO-243AA SOT-89:N8 0.177 ± 0.004 (4.4958 ± 0.1016) 0.068 ± 0.004 (1.7272 ± 0.1016) 0.059 ± 0.004 (1.4986 ± 0.1016) D A D1 0.161 ± 0.006 (4.0894 ± 0.1524) H 0.096 ± 0.006 (2.4384 ± 0.1524) E 0.041 ± 0.006 (1.0414 ± 0.1524) L 0.0165 ± 0.0025


    Original     		PDF O-243AA OT-89 LND150N8 4384 7272

    RS468

    Abstract: transistor dg sot-23 BENT LEAD transistor TO-92 Outline Dimensions P005 n7 transistor P012 B W4 Transistor GP007 transistor W4 sot-23
    Text: Package Options TO-39 N2, B TO-52 (N9) TO-92 (N3, L, LL) DIP Plastic (N4, N6, NA, J, P) DIP Ceramic (NC, N7, P, C) Side Braze (NC, N7) TO-220 (N5) 7-Pin TO-220 (K2) TO-243 AA (SOT-89) (N8) SOT-23 (K1) TO-3 (N1) Die in Wafer Form (NW, XW) Die on adhesive


    Original     		PDF O-220 O-243 OT-89) OT-23 RS468 transistor dg sot-23 BENT LEAD transistor TO-92 Outline Dimensions P005 n7 transistor P012 B W4 Transistor GP007 transistor W4 sot-23

    Untitled

    Abstract: No abstract text available
    Text: E-TA THERMAL VARIABLE ATTENUATORS •FEATURES ■APPLICATIONS ● Flat VSWR characteristic to the temperature change. ● Linear attenuation characteristic to temperature fluctuation. ● RoHS compliant. ● Temperature compensation of microwave high power


    Original     		PDF E-TA3216 E-TA2012

    8 lead soic-n package R8

    Abstract: ADM705 ADM707 adm705arzreel1 ADM706 MAX705 MAX708 MO-187-AA Package BA RM-8 ADM708ANZ
    Text: Low Cost Microprocessor Supervisory Circuits ADM705/ADM706/ADM707/ADM708 FUNCTIONAL BLOCK DIAGRAMS WATCHDOG INPUT WDI WATCHDOG TRANSITION DETECTOR VCC 250 A MR 4.65V* ADM705/ ADM706 POWER-FAIL INPUT (PFI) WATCHDOG OUTPUT (WDO) RESET AND WATCHDOG TIMEBASE


    Original     		PDF ADM705/ADM706/ADM707/ADM708 ADM705/ ADM706 ADM705) ADM706) ADM705/ADM706 ADM707/ ADM708 8 lead soic-n package R8 ADM705 ADM707 adm705arzreel1 ADM706 MAX705 MAX708 MO-187-AA Package BA RM-8 ADM708ANZ

    Untitled

    Abstract: No abstract text available
    Text: THERMAL VARIABLE ATTENUATORS E-TA •FEATURES ■APPLICATIONS ● Flat VSWR characteristic to the temperature change. ● Linear attenuation characteristic to temperature fluctuation. ● RoHS compliant. ● Temperature compensation of microwave high power


    Original     		PDF E-TA3216 E-TA2012

    Untitled

    Abstract: No abstract text available
    Text: FDP038AN06A0 / FDI038AN06A0 N-Channel PowerTrench MOSFET 60 V, 80 A, 3.8 mΩ Features Applications • RDS on = 3.5 mΩ ( Typ.) @ VGS = 10 V, ID = 80 A • Synchronous Rectification for ATX / Server / Telecom PSU • QG(tot) = 96 nC ( Typ.) @ VGS = 10 V


    Original     		PDF FDP038AN06A0 FDI038AN06A0 O-220 FDP038AN06A0

    FDM606P

    Abstract: m073
    Text: FDM606P P-Channel 1.8V Logic Level Power Trench MOSFET General Description Features This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching


    Original     		PDF FDM606P FDM606P m073

    Untitled

    Abstract: No abstract text available
    Text: FDP070AN06A0 N-Channel PowerTrench MOSFET 60 V, 80 A, 7 mΩ Features Applications • RDS on = 6.1 mΩ (Typ.) @ VGS = 10 V, ID = 80 A • Synchronous Rectification for ATX / Server / Telecom PSU • Qg(tot) = 51 nC (Typ.) @ VGS = 10 V • Battery Protection Circuit


    Original     		PDF FDP070AN06A0 O-220

    FDP2532

    Abstract: FDP2532 Mosfet
    Text: FDP2532 / FDB2532 N-Channel PowerTrench MOSFET 150 V, 79 A, 16 mΩ Features Applications • RDS on = 14 mΩ ( Typ.) @ VGS = 10 V, ID = 33 A • Consumer Appliances • QG(tot) = 82 nC ( Typ.) @ VGS = 10 V • Synchronous Rectification • Low Miller Charge


    Original     		PDF FDP2532 FDB2532 O-220 FDP2532 Mosfet

    Untitled

    Abstract: No abstract text available
    Text: FDD16AN08A0 N-Channel PowerTrench MOSFET 75 V, 50 A, 16 mΩ Features Applications • RDS on = 13 mΩ ( Typ.) @ VGS = 10 V, ID = 50 A • Synchronous Rectification • QG(tot) = 31 nC ( Typ.) @ VGS = 10 V • Battery Protection Circuit • Low Miller Charge


    Original     		PDF FDD16AN08A0

    IC OP AMP for Piezoelectric transducers

    Abstract: servo accelerometer aCCELEROMETER APPLICATION CIRCUIT accelerometer b 0P215
    Text: r j uTECHNOLOGY r m F€RTUR€S • ■ ■ ■ ■ ■ ■ ■ ■ ■ Input Bias Current, W arm ed Up: 20pA Max 100% Tested Low Voltage Noise: 8nV/VHz Max S8 and N8 Package Standard Pinout Very Low Input Capacitance: 1.5pF Voltage Gain: 1.2 Million Min


    OCR Scan     		PDF LT1169 LT1169 1013Q) 330Hz LT1113 LT1462 LT1464 CA95035-7417« IC OP AMP for Piezoelectric transducers servo accelerometer aCCELEROMETER APPLICATION CIRCUIT accelerometer b 0P215

    Untitled

    Abstract: No abstract text available
    Text: r r u r m TECHNOLOGY _LT1169 Dual Low Noise, P ic o a m p e re Bias C urrent, JFET In p u t O p A m p F€RTUR€S DCSCRIPTIOn • Input Bias Current, W arm ed Up: 20pA Max ■ 100% Tested Low Voltage Noise: 8nV/Vflz Max ■ S8 and N8 Package Standard Pinout


    OCR Scan     		PDF LT1169 LT1169 330Hz LT1113 LT1462 LT1464 CA95035-7417Â 6faLmpoi98REVA

    ba7106

    Abstract: No abstract text available
    Text: PAL and SECAM discriminator, with switch, for use in delay lines BA7106LS The BA7106LS includes a PAL and SECAM discriminator on a single chip. Dimensions Units : mm BA7106LS (SZIP24) The IC contains a glass delay line amplifier, and an amplifier output switch.


    OCR Scan     		PDF BA7106LS SZIP24) BA7106LS SZIP24 VTH21 hys24 ba7106

    BA7106LS

    Abstract: N4 Amplifier GV-28 SZIP24 discriminator 5.5 Mhz ba7106
    Text: BA7106LS PAL and SECAM discriminator, with switch, for use in delay lines The BA7106LS includes a PAL and SECAM discriminator on a single chip. Dimensions Units: mm BA7106LS (SZIP24) The IC contains a glass delay line amplifier, and an amplifier output switch.


    OCR Scan     		PDF BA7106LS SZIP24 BA7106LS SZIP24) 0013bQl Hys24 ZIN12 vin12 vth21 N4 Amplifier GV-28 discriminator 5.5 Mhz ba7106

    Untitled

    Abstract: No abstract text available
    Text: HUF75545P3, HUF75545S3S Semiconductor June 1999 Data Sheet File Num ber 4738.1 75A, 80V, 0.010 Ohm, N-Channel, UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN FLANGE • Ultra Low On-Resistance • rDS(ON) = 0.01 O il,


    OCR Scan     		PDF HUF75545P3, HUF75545S3S O-220AB O-263AB HUF75545P3 75545P

    76105DK8

    Abstract: No abstract text available
    Text: HUF76105DK8 S e m ic o n d u c to r October 1998 Data Sheet • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in


    OCR Scan     		PDF HUF76105DK8 1-800-4-HARRIS 76105DK8