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    N914 Price and Stock

    onsemi 1N914-T50A

    DIODE GEN PURP 100V 200MA DO35
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    DigiKey 1N914-T50A Cut Tape 171,386 1
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    1N914-T50A Ammo Pack 165,000 5,000
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    Mouser Electronics 1N914-T50A 32,887
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    Rochester Electronics 1N914-T50A 5,000 1
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    Avnet Silica 1N914-T50A 24 Weeks 5,000
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    EBV Elektronik 1N914-T50A 25 Weeks 5,000
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    Flip Electronics 1N914-T50A 5,000
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    onsemi 1N914BWT

    DIODE GEN PURP 75V 200MA SOD523F
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    DigiKey 1N914BWT Reel 104,000 8,000
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    Mouser Electronics 1N914BWT 728,320
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    Newark 1N914BWT Cut Tape 82,597 1
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    1N914BWT Reel 64,000 8,000
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    1N914BWT Cut Tape 11,378 1
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    RS 1N914BWT Bulk 2 Weeks 100
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    Rochester Electronics 1N914BWT 151,280 1
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    TME 1N914BWT 5,239 1
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    Avnet Silica 1N914BWT 11 Weeks 8,000
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    EBV Elektronik 1N914BWT 12 Weeks 8,000
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    Flip Electronics 1N914BWT 15,750
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    Master Electronics 1N914BWT 56,000
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    Vishay Semiconductors 1N914TR

    DIODE GEN PURP 75V 200MA DO35
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    DigiKey 1N914TR Cut Tape 71,077 1
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    1N914TR Reel 60,000 10,000
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    onsemi 1N914BTR

    DIODE GEN PURP 100V 200MA DO35
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    DigiKey 1N914BTR Reel 40,000 10,000
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    Avnet Americas 1N914BTR Reel 60,000 10 Weeks 10,000
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    Mouser Electronics 1N914BTR 27,344
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    Newark 1N914BTR Reel 20,000 10,000
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    1N914BTR Cut Tape 3,423 1
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    Rochester Electronics 1N914BTR 186,261 1
    • 1 $0.025
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    Avnet Silica 1N914BTR 11 Weeks 10,000
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    Chip One Stop 1N914BTR Cut Tape 9,545
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    EBV Elektronik 1N914BTR 12 Weeks 10,000
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    New Advantage Corporation 1N914BTR 200,000 1
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    Wuhan P&S 1N914BTR 80,000 1
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    Suzhou Good-Ark Electronics Co Ltd 1N914

    DIODE, SWITCHING, 75MA, 100V, DO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 1N914 Cut Tape 14,771 1
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    N914 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    RESISTOR NETWORK SMD 8 PIN array isolated 2512

    Abstract: 88em8011 MILMAX MACHINE marking code EA SMD MOSFET MOSFET marking smd NU Zener diode smd marking code nu prestera package marking semiconductor smd marking codes diode SMD MARKING CODE 606
    Text: Cover 88EM8011 Power Factor Correction Controller Datasheet Patents, Patents Pending Including US Pat. Nos. 7,266,001 and 7,292,013 Doc. No. MV-S104861-00, Rev. November 28, 2007 Marvell. Moving Forward Faster Document Classification: Proprietary 88EM8011


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    88EM8011 MV-S104861-00, 88EM8011 MV-S104861-00 RESISTOR NETWORK SMD 8 PIN array isolated 2512 MILMAX MACHINE marking code EA SMD MOSFET MOSFET marking smd NU Zener diode smd marking code nu prestera package marking semiconductor smd marking codes diode SMD MARKING CODE 606 PDF

    Untitled

    Abstract: No abstract text available
    Text: 3QE D • ?12*ï237 00310^3 fi ■ T - ^ S 'O ^ SGS-THOMSON a n S G [M D m m ig ïïM D O Û S 2 N914 S-TH0MS0N SATURATED LOGIC SWITCH AND VHF AMPLIFIER DESCRIPTION The N914 is a silicon planar epitaxial NPN transis­ tor in Jedec TO-18 metal case. It is primarily a uni­


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    2N914 2N914 PDF

    DN914

    Abstract: No abstract text available
    Text: 1.4-inch 36 mm 5 x 8 Dot Matrix LED Display D-N914, D-K914, DEGK914 and DEGN/K9141 Series wdea The 1.4-inch 5 x 8 dot matrix is designed for applications where multiple rows of alphanumeric information must be displayed. It can also be arranged in 16-row groups for displaying Chinese characters and in larger formats for graphics.


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    D-N914, D-K914, DEGK914 DEGN/K9141 16-row DEN914 DEK914 DXN914 DXK914 DGN914 DN914 PDF

    1N414 diode

    Abstract: 1N414 1N4148.1N4448 J 1N4448 equivalent
    Text: 1N4148.1N4448 VISHAY _ ▼ Vishay Telefunken Silicon Epitaxial Planar Diodes Features • Electrically equivalent diodes: 1N414 8 - 1 N914 1 N 44 48- N914B Applications Extreme fast switches Absolute Maximum Ratings T¡ = 25°C Parameter


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    1N4148 1N4448 1N414 1N914B 01-Apr-99 1N414 diode 1N4148.1N4448 J 1N4448 equivalent PDF

    Diodes 1n 4148

    Abstract: No abstract text available
    Text: VfSMAY _ 1N4148.1N4448 ▼ Vishay Telefunken Silicon Epitaxial Planar Diodes Features • Electrically equivalent diodes: 1N 4148 - 1 N 914 1N4448 - 1 N914B Applications 94 9367 Extrem e fa st sw itches Absolute Maximum Ratings Tj = 2 5 °C


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    1N4148 1N4448 1N4448 N914B D-74025 01-Apr-99 Diodes 1n 4148 PDF

    1N91 diode

    Abstract: 1N91 N914A 1N914 1N914A 1N914B SC-40 1N914b diode 13A1A
    Text: TOSHIBA {DISCRET E/ OPT O} b7 9097250 T O S H IBA DISCRETE/OPTO N914,1 N914A, N914B De I ^ O T O S D . ^ OODTSflS 7 D T-o^-o . 67C 09285 S ilico n E p it a x ia l- P la n a r T y p e D iode TENTATIVE Unit in mm COMMUNICATION AND INDUSTRIAL APPLICATIONS.


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    1N914B 200ent SC-40 1N914 1N914A 1N914B 100mA 1N91 diode 1N91 N914A SC-40 1N914b diode 13A1A PDF

    RTM 866 - 480

    Abstract: SAK 110 TAA775G ITT TCA 700 Y SAJ 220 SG 2368 ITT 90 38 TCA 700 Y SAJ110 TCA 430 taa790
    Text: Halbleiter­ bauelemente 1972/73 INTERMETALL H albleiterwerk der Deutsche ITT Industries GmbH ITT Alphabetisches Typenverzeichnis Typ S eite Typ S eite Typ Seite 1 N 914 42 2 N 3055 38 BB 121 1 N914A 1 N914B 1 N 3604 42 42 42 2 N 3962 33 BB 122 2 N 3963 2 N 3964


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    N914A N914B RTM 866 - 480 SAK 110 TAA775G ITT TCA 700 Y SAJ 220 SG 2368 ITT 90 38 TCA 700 Y SAJ110 TCA 430 taa790 PDF

    Untitled

    Abstract: No abstract text available
    Text: CAT28C17A 16K-Bit CMOS E2PROM FEATURES Fast Read Access Times: 200 ns End of Write Detection: -D A T A Polling -R D Y /B D S Y Pin Low Power CMOS Dissipation: -A ctive: 25 mA Max. -S tan d b y: 100 jiA Max. Hardware Write Protection Simple Write Operation:


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    CAT28C17A 16K-Bit CAT28C17A CAT28C17A. 28C17A CAT28C17ANI-20TE7 PDF

    Untitled

    Abstract: No abstract text available
    Text: CAT28F102 L icen sed In tel second source 1 Megabit CMOS Flash Memory FEATURES • Fast Read Access Time: 55/70/90/100/120 ns ■ 64K x 16 Word Organization ■ Low Power CMOS Dissipation: -Active: 30 mA max CMOS/TTL levels -Standby: 1 mA max (TTL levels)


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    CAT28F102 -40-pin -44-pin 28F102A 125oC CAT28F102NI-90TE7 PDF

    Untitled

    Abstract: No abstract text available
    Text: B ' i c i L _ Y s ~ r Preliminary CAT28F001 L icen sed In tel second source 1 Megabit CMOS Boot Block Flash Memory FEATURES • Deep Powerdown Mode — 0.05 |xA lcc Typical — 0.8 jiA lpp Typical ■ Hardware Data Protection ■ Electronic Signature ■ 100,000 Program/Erase Cycles and 10 Year


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    CAT28F001 24-40-LEAD M0-015 PDF

    R4R7

    Abstract: LM148D
    Text: F A IR C H IL D s e m ic o n d u c t o r w w w .fa irc h ild s e m i.c o m tm LM148 L o w P o w e r Q u a d 741 O p e r a t i o n a l A m p l i f i e r Features Description • • • • • • • • • • The LM148 is a true quad 741. It consists of four


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    LM148 LM124 LM148 R4R7 LM148D PDF

    Untitled

    Abstract: No abstract text available
    Text: C A T 28 C 17A 16K-Bit CMOS PARALLEL E2PROM FEATURES • Fast Read Access Tim es: 200 ns ■ ■ Low Power CMOS Dissipation: -A c tiv e : 25 mA Max. -S ta n d b y: 100 jiA Max. End o f Write Detection: -D A T A 'P olling -R D Y /B S T Pin ■ Hardware Write Protection


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    16K-Bit CAT28C17A 24-40-LEAD PDF

    Untitled

    Abstract: No abstract text available
    Text: SGS-TtiOMSON MK50H28 • U K ê T IM M Ê i MULTI LOGICAL LINK FRAME RELAY CONTROLLER SECTION 1 - FEATURES ■ Based on ITU Q.933 Annex A and T1.617 An­ nex D Standards for Frame Relay Service and Additional Pocedures for Permanent Virtual Circuits PVCs .


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    MK50H28 nT1/T391, nT2/T392, nN1/N391, nN2/N392, nN3/N393 cPLCC52 PDF

    CAT28C16A

    Abstract: 28C16A CAT28C16ANI-20T MS-013
    Text: C AT28C 16A 16K-Bit CMOS PARALLEL E2PROM FEATURES • Fast Read Access Times: 200 ns ■ End of Write Detection: DATA Polling ■ Low Power CMOS Dissipation: -A c tiv e : 25 mA Max. -S ta n d b y: 100 fiA Max. ■ Hardware Write Protection ■ CMOS and TTL Compatible I/O


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    CAT28C16A 16K-Bit CAT28C16A 24-40-LEAD M0-015 DDD34D3 28C16A CAT28C16ANI-20T MS-013 PDF

    A15C

    Abstract: CAT28F001
    Text: 'Bi ci L_Y s ~r Preliminary CAT28F001 L icen sed In tel second source 1 Megabit CMOS Boot Block Flash Memory FEATURES • Deep Powerdown Mode — 0.05 |xA lcc Typical — 0.8 jiA lpp Typical ■ Hardware Data Protection ■ Electronic Signature ■ 100,000 Program/Erase Cycles and 10 Year


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    CAT28F001 24-40-LEAD M0-015 DDD34D3 A15C CAT28F001 PDF

    28C17A

    Abstract: CAT28C17A CAT28C17ANI-20T
    Text: CAT28C 17A 16K-Bit CMOS PARALLEL E2PROM FEATURES • Fast Read Access Times: 200 ns ■ End of Write Detection: -D A TA'Polling -R D Y /B S T Pin ■ Low Power CMOS Dissipation: -Active: 25 mA Max. -Standby: 100 jiA Max. ■ Hardware Write Protection ■ Simple Write Operation:


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    CAT28C17A 16K-Bit 24-40-LEAD M0-015 28C17A CAT28C17ANI-20T PDF

    diode t 4148

    Abstract: TI 4148 FDLL916B 914/A/B FDLL4448 FDLL914 FDLL914A FDLL914B FDLL916 FDLL916A
    Text: 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Discrete POWER & Signal Technologies National Semiconductor" 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 COLOR BAND MARKING DEVICE F D L L 91 4 F D LL914A FD LL914B F D L L 91 6 F D LL916A FD LL916B FD LL4148 FD LL4448 1ST BAND


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    914/A/B 916/A/B FDLL914 FDLL914A FDLL914B FDLL916 FDLL916A FDLL916B FDLL4148 FDLL4448 diode t 4148 TI 4148 PDF

    NE5018

    Abstract: SE5018 8085 philips 5019N
    Text: TSt-09-09 Philips Sem iconductors-Signeties Linear Products 8-Bit |xp-compatible D/A converter NE/SE5018/5019 5DE D NAPC/ SIGNETICS oobvoos q m s i c i PIN CONFIGURATIONS DESCRIPTION FEATURES The NE/SE5018/19 is a complete 8-bit digital-to-anaiog converter subsystem on one


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    T-Si-09-OS NE/SE5018/5019 NE/SE5018/19 SJ-09-Ã NE/SE5018/5019 NE5018 SE5018 8085 philips 5019N PDF

    Untitled

    Abstract: No abstract text available
    Text: N914 THRU FORWARD INTERNATIONAL ELECTRONICS LTD. SEM ICO N D U CTO R 4^ 43 TECHNICAL DATA_ TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES VOLTAGE RANGE -50 to 100 Volts CURRENT - 0.075 to 0.2 Ampere FEATURES ' ‘ *


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    1N914 IL-STD-202E, N4148MJ 1N4148\ 11N914 1N4454 1N4148 PDF

    LFTP

    Abstract: NE5018 ref500
    Text: Philips Sem lconductors-Signetics Linear Products Product specification 8-Bit ¡ip-eompatible D/A converter NE/SE5018/5019 PIN CONFIGURATIONS DESCRIPTION FEATURES The N E /S E 5018/19isacom plete 8-bit digital-to-analog converter subsystem on one monolithic chip. The data inputs have input


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    NE/SE5018/5019 5018/19isacom 47jiF JN814I LFTP NE5018 ref500 PDF

    Untitled

    Abstract: No abstract text available
    Text: ÌCM7170 HARRIS S E M I C O N D U C T O R |iP-Compatible, Real-Time Clock A pril 1997 Features Description • 8-Bit, |^P Bus Com patible T he IC M 7170 real tim e clo ck is a m icro p ro ce sso r bus com p atib le peripheral, fab ricated using H a rris’ silicon gate


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    CM7170 N914-type ICM7170 PDF

    Untitled

    Abstract: No abstract text available
    Text: Æ 7 SCS-THOMSON ^ 7 # M28F201 [iD ê œ iL K g ^ O iQ ig i CMOS 2 Megabit 256K x 8 FLASH MEMORY ADVANCE DATA • FAST ACCESS TIME: 100ns ■ LOW POWER CONSUMPTION - Standby Current: 100p.A Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE


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    M28F201 100ns M28F201 PDIP32 PLCC32 PTS032 PDF

    1N914

    Abstract: N914A N914B 1N914B 1N914-1
    Text: N914 / N914A / N914B FAST SWITCHING DIODE Features Fast Switching Speed High Reliability High Conductance For General Purpose Switching Applications T D Mechanical Data_ • • • • DO-35 Case: D O -35, Glass Terminals: Solderable per M IL-STD-202,


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    1N914 1N914A 1N914B IL-STD-202, DO-35 Current10mA DS22001 N914A N914B N914B 1N914B 1N914-1 PDF

    N4003

    Abstract: BELLCORE FSK ZF steering GR-30-CORE MT88E43B MT88E43BE MT88E43BS SIN227 1N40032 tda 2222
    Text: SEMICONDUCTOR CMOS MT88E43B Extended Voltage Calling Number Preliminary Information Identification Circuit 2 Features D S 5 1 5 7 _ IS S U E 1_ A p ril 1 9 9 9 • Ordering Information MT88E43BE 24 Pin Plastic DIP


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    MT88E43B SIN227 SIN242 E/312 GR-30-CORE TR-NWT-000030) SR-TSV-002476 -40dBV MT88E43B N4003 BELLCORE FSK ZF steering GR-30-CORE MT88E43BE MT88E43BS SIN227 1N40032 tda 2222 PDF