UDZV2.0B
Abstract: No abstract text available
Text: P400e 1.8-Inch NAND Flash SSD Features P400e 1.8-Inch SATA NAND Flash SSD MTFDDAA050MAR, MTFDDAA100MAR, MTFDDAA200MAR, MTFDDAA400MAR Features • Micron 25mm MLC NAND Flash • Capacity1 unformatted : 50GB, 100GB, 200GB, 400GB • RoHS-compliant package
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P400e
MTFDDAA050MAR,
MTFDDAA100MAR,
MTFDDAA200MAR,
MTFDDAA400MAR
100GB,
200GB,
400GB
512-byte
UDZV2.0B
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MTFDDAA100MAR
Abstract: No abstract text available
Text: P400e 1.8-Inch NAND Flash SSD Features P400e 1.8-Inch SATA NAND Flash SSD MTFDDAA050MAR, MTFDDAA100MAR, MTFDDAA200MAR, MTFDDAA400MAR Features • Micron 25nm MLC NAND Flash • Capacity1 unformatted : 50GB, 100GB, 200GB, 400GB • RoHS-compliant package
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P400e
MTFDDAA050MAR,
MTFDDAA100MAR,
MTFDDAA200MAR,
MTFDDAA400MAR
100GB,
200GB,
400GB
512-byte
MTFDDAA100MAR
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Untitled
Abstract: No abstract text available
Text: P400e 2.5-Inch NAND Flash SSD Features P400e 2.5-Inch SATA NAND Flash SSD MTFDDAK050MAR, MTFDDAK100MAR, MTFDDAK200MAR, MTFDDAK400MAR Features • • • • • • • • • • • • • • Micron 25nm MLC NAND Flash RoHS-compliant package SATA 6 Gb/s interface
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P400e
MTFDDAK050MAR,
MTFDDAK100MAR,
MTFDDAK200MAR,
MTFDDAK400MAR
512-byte
32-command
09005aef8476b180
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sata ssd controller
Abstract: No abstract text available
Text: P400e 2.5-Inch NAND Flash SSD Features P400e 2.5-Inch SATA NAND Flash SSD MTFDDAK050MAR, MTFDDAK100MAR, MTFDDAK200MAR, MTFDDAK400MAR Features • • • • • • • • • • • • • • Micron 25nm MLC NAND Flash RoHS-compliant package SATA 6 Gb/s interface
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P400e
MTFDDAK050MAR,
MTFDDAK100MAR,
MTFDDAK200MAR,
MTFDDAK400MAR
512-byte
32-command
64KB/128KB
09005aef8476b180
sata ssd controller
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FZH115B
Abstract: fzh261 FZK105 FZH131 FZJ111 FZH115 FZH205 Multiplexer IC 74151 FZH265B 74LS104
Text: Digital I.C.s, 74INTEGRATED CIRCUITS DIGITAL TTL, 74LS & 74HC Series Quad 2-input NAND gate Quad 2-input NAND gate, open collector Quad 2-input NOR gate Quad 2-input NOR gate, open collector Hex inverter Hex inverter, O/C collector Hex inverter, Buffer 30V O/P
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74INTEGRATED
Line-to-10
150ns
16-DIL
150ns
18-pin
250ns
300ns
FZH115B
fzh261
FZK105
FZH131
FZJ111
FZH115
FZH205
Multiplexer IC 74151
FZH265B
74LS104
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Mali-400
Abstract: No abstract text available
Text: Allwinner Technology CO., Ltd. A13 User Manual V1.2 2013.01.08 A13 Allwinner Technology CO., Ltd. A13 Revision History Version Date Author V1.0 2012.04.16 Initial version V1.1 2012.10.25 Modify SDRAM/NAND module descriptions V1.2 2013.1.8 A13 User Manual V1.2
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Mali-400
Mali-400
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KBB0XA300M
Abstract: transistor ba47 SAMSUNG MCP BA108 BA102 BA99 NAND FLASH BGA BGA34 BGA22 t402
Text: Preliminary MCP MEMORY KBB0xA300M - T402 Document Title Multi-Chip Package MEMORY 64M Bit 8Mx8/4Mx16 Dual Bank NOR Flash *2 / 128M Bit (8Mx16) NAND Flash / 32M Bit (2Mx16) UtRAM Revision History Revision No. History Draft Date Remark October 15, 2002 Preliminary
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KBB0xA300M
8Mx8/4Mx16)
8Mx16)
2Mx16)
80-Ball
80x12
transistor ba47
SAMSUNG MCP
BA108
BA102
BA99
NAND FLASH BGA
BGA34
BGA22
t402
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Untitled
Abstract: No abstract text available
Text: SN54ALS00A, SN54AS00, SN74ALS00A, SN74AS00 QUADRUPLE 2-INPUT POSITIVE-NAND GATES SDAS187A – APRIL 1982 – REVISED DECEMBER 1994 Package Options Include Plastic Small-Outline D Packages, Ceramic Chip Carriers (FK), and Standard Plastic (N) and Ceramic (J) 300-mil DIPs
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SN54ALS00A,
SN54AS00,
SN74ALS00A,
SN74AS00
SDAS187A
300-mil
SN54AS00
SN74AS00
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MTFC4G
Abstract: MTFC16G micron emmc MTFC32G micron eMMC 100 ball BGA MTfc8g emmc csd MTFC4 micron emmc 4.4 MTFC16GKQDI
Text: 4GB, 8GB, 16GB, 32GB: e•MMC Features e·MMC Memory MTFC4GGQDM, MTFC4GGQDI, MTFC8GKQDI, MTFC16GKQDI, MTFC32GKQDH Features Figure 1: Micron e·MMC Device • MultiMediaCard MMC controller and NAND Flash • 153-ball FBGA or 169-ball FBGA (6/6 RoHS-compliant)
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MTFC16GKQDI,
MTFC32GKQDH
153-ball
169-ball
41-compliant
84-A441)
09005aef838eabba
j534q567r
MTFC4G
MTFC16G
micron emmc
MTFC32G
micron eMMC 100 ball BGA
MTfc8g
emmc csd
MTFC4
micron emmc 4.4
MTFC16GKQDI
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SAMSUNG MCP
Abstract: KBB05A500 transistor BA29 BA102 NAND FLASH BGA transistor ba47 Pre-programming nand samsung UtRAM Density BA841 BGA-100
Text: KBB0xA500M - T402 MCP MEMORY Document Title Multi-Chip Package MEMORY 64M Bit 8Mx8/4Mx16 Dual Bank NOR Flash *2 / 128M Bit (8Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft October 15, 2002
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KBB0xA500M
8Mx8/4Mx16)
8Mx16)
4Mx16)
150uA
100uA
200uA
80-Ball
80x12
SAMSUNG MCP
KBB05A500
transistor BA29
BA102
NAND FLASH BGA
transistor ba47
Pre-programming nand samsung
UtRAM Density
BA841
BGA-100
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SAMSUNG MCP
Abstract: samsung toggle mode NAND ba7810 BA102 NAND FLASH BGA UtRAM Density BA5101 BA340 BGA-60
Text: SEC Only MCP MEMORY KAB0xD100M - TxGP Document Title Multi-Chip Package MEMORY 64M Bit 8Mx8/4Mx16 Dual Bank NOR Flash / 128M Bit (8Mx16) NAND Flash / 32M Bit (2Mx16) UtRAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft March 20, 2002
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KAB0xD100M
8Mx8/4Mx16)
8Mx16)
2Mx16)
39page)
43page)
80-Ball
SAMSUNG MCP
samsung toggle mode NAND
ba7810
BA102
NAND FLASH BGA
UtRAM Density
BA5101
BA340
BGA-60
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SAMSUNG MCP
Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
Text: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)
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KBB0xB400M
16Mx16)
4Mx16)
80-Ball
80x12
SAMSUNG MCP
ECH information
KBB0xB400M
BA102
ba4901
UtRAM Density
BA5101
samsung NAND memory
BGA180
ba30 transistor
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H26M* hynix
Abstract: Hynix eMMC 4.5 controller hynix emmc H26M3100 FBGA153 H26M4 FBGA169 H26M31001FPR Hynix eMMC 5.1 controller h26m5
Text: 26nm 32Gb based e-NAND product Family This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 1.1 / Apr. 2011 1 Document Title
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150ms)
512KB
220ms
247ms
262ms
H26M* hynix
Hynix eMMC 4.5 controller
hynix emmc
H26M3100
FBGA153
H26M4
FBGA169
H26M31001FPR
Hynix eMMC 5.1 controller
h26m5
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hc 7400
Abstract: ls 7400 7400 hc 7400 quad 2-input nand tl 7400 74LSOO 7400 7400 QUAD NAND 7400 quad
Text: - 15 7400 Quad 2 Input NAND
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Untitled
Abstract: No abstract text available
Text: DM74ALS1000A Quadruple 2-lnput NAND Buffer General Description Features These devices contain four independent 2-input buffer/driv ers, each of which performs the logic NAND function. The ’ALS1000A is a buffer/driver version of the ’ALSOOA. • Switching specifications at 50 pF
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DM74ALS1000A
ALS1000A
DM74ALS1000AM
DM74ALS1000AN
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Untitled
Abstract: No abstract text available
Text: S E M IC O N D U C T O R tm DM74ALS10A Triple 3-Input NAND Gate This device contains three independent gates, each of which perform s the logic NAND function. • Functionally and pin fo r pin com patible w ith Schottky and low pow er Schottky T T L counterpart
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DM74ALS10A
DM74ALS10A
DS006180-1
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74F38
Abstract: No abstract text available
Text: R C H I I - P S E M IC O N D U C T O R tm 74F38 Quad Two-Input NAND Buffer Open Collector puts require external pull-up resistors fo r proper logical operation. General Description This device contains fo u r independent gates, each of which perform s th e logic NAND function. The o pen-collector out-
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74F38
74F38PC
74F38SJ
14-Lead
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Untitled
Abstract: No abstract text available
Text: S E M IC O N D U C T O R tm DM74ALS00A Quad 2-Input NAND Gate • A dvanced oxide-isolated, ion-im planted S c h o ttk y T T L process General Description This device contains fo u r independent gates, each of which perform s the logic NAND function. ■ Functionally and pin fo r pin com patible w ith Schottky
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DM74ALS00A
DS006270-1
DM74ALS00M,
DM74ALericas
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74LS00 function table
Abstract: pin configuration logic symbol 74LS00 ls 7400 specification of 74ls00 74LS00 pin configuration logic symbol 74LS00 pin configuration 74LS00 7400 ls TTL 74ls00 TTL LS 7400
Text: Signelics | 7400, LS00, S00 Gates Quad Two-Input NAND Gate Product Specification Logic Products TYPICAL PROPAGATION DELAY TYPE 7400 74LS00 74S00 TYPICAL SUPPLY CURRENT TOTAL 9ns 8mA 9.5ns 1.6mA 3ns 15mA ORDERING CODE COMMERCIAL RANGE VCC = 5 V ± 5 % ; TA = 0°C to + 70°C
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74LS00
74S00
N7400N,
N74LS00N,
N74S00N
N74LS00D,
N74SOOD
74LS00 function table
pin configuration logic symbol 74LS00
ls 7400
specification of 74ls00
74LS00 pin configuration
logic symbol 74LS00
pin configuration 74LS00
7400 ls
TTL 74ls00
TTL LS 7400
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Untitled
Abstract: No abstract text available
Text: December 1989 Semiconductor DM74ALS37A Quadruple 2-Input NAND Buffer Advanced oxide-isolated, ion-implanted Schottky TTL process Functionally and pin for pin compatible with LS TTL counterpart Improved AC performance over LS37 Improved line receiving characteristics
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DM74ALS37A
DM74ALS37AM
DM74ALS37AN
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S691 oscillator
Abstract: 74hc 4514 ap HC4078 HC592A 4017 timer ic HC593A S688 LS194A HC165A 4017 Decade Counter IC
Text: 2. HIGH SPEED CMOS SELECTION GUIDE NAND NOR AND OR INVERTER,BUFFER EXCLUSIVE OR/NOR SCHMITT TRIGGER MULTI FUNCTION LEVEL SHIFTER RTIQ RlIFPfT} HCOOA HCTOOA HC03A HC10A HC20A HC30A HC132A HC133A HC02A HCT02A HC27A HC4002A HC4078A HC08A HCT08A HC09A HCUA HC21A
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HC03A
HC10A
HC20A
HC30A
HC132A
HC133A
HC02A
HCT02A
HC27A
HC4002A
S691 oscillator
74hc 4514 ap
HC4078
HC592A
4017 timer ic
HC593A
S688
LS194A
HC165A
4017 Decade Counter IC
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7400N
Abstract: 2 input nand gate 24v D1113 FJH131 FJHI36 6400N FIH131 FJH131A FJH136 2 input nor gate 24v
Text: T.T.L. QUADRUPLE 2-INPUT NAND GATES Correspond to 74 Series types 7400N, 6400N FIH13 1 FJHI3IA FJHI36 T ENTATIVE DATA T h e s e d e v ic e s a r e t r a n s i s t o r - t r a n s i s t o r lo g ic q u a d ru p le 2 -in p u t NAND g a te s in th e F J s e r i e s of in te g r a te d c i r c u i t s . T h e F JH 131 c o r r e s p o n d s to '7 4 S e r i e s 't y p e 7400N,
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FIH131
7400N,
6400N
FJHI36
FJH131
FJH136
6400N.
FJH131/1A
7400N
2 input nand gate 24v
D1113
FJHI36
FIH131
FJH131A
2 input nor gate 24v
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74LS00D
Abstract: 74S00N 74LS00DN 74LS00N specification of 74ls00 7400 signetics TTL 74S00D 74LS00 fan-out 7400n 7400 quad NAND pin configuration
Text: Signetics 1 74 0 0 , Lsoo, soo Gates Quad Two-Input NAND Gate Product Specification Logic Products TYPICAL PROPAGATION DELAY TYPE 7400 7 4 LS00 74S00 TYPICAL SUPPLY CURRENT TOTAL 9ns 8mA 9 .5 n s 1 .6 m A 3ns 15m A ORDERING CODE COMMERCIAL RANGE VCC = 5 V ± 5 % ; TA = 0°C to + 70°C
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74S00
7400N
74S00N
74LS00D
74S00D
WF07570S
74LS00D
74LS00DN
74LS00N
specification of 74ls00
7400 signetics TTL
74S00D
74LS00 fan-out
7400n
7400 quad NAND pin configuration
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Untitled
Abstract: No abstract text available
Text: & Semiconductor February 1988 CD4023BM/CD4023BC Buffered Triple 3-Input NAND Gate CD4025BM/CD4025BC Buffered Triple 3-Input NOR Gate General Description Features These triple gates are monolithic complementary MOS CMOS integrated circuits constructed with N- and P-channel enhancement mode transistors. They have equal source
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CD4023BM/CD4023BC
CD4025BM/CD4025BC
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