TOSHIBA flash memory
Abstract: Toshiba flash 40hor41h
Text: THNIDxxxxBx Series Rev.1.1 NAND Flash Drive - THNIDxxxxBx Series -OUTLINE The NAND Flash Drive THNIDxxxxBx series is Toshiba’s flash memory drive having IDE interface which features a flash disk controller chip and NAND-type flash memory devices. There are two types of form factors,
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128MB,
192MB,
256MB,
320MB,
384MB,
512MB,
640MB,
1024MB,
1536MB
2048MB
TOSHIBA flash memory
Toshiba flash
40hor41h
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256kx8 sram 5v
Abstract: toshiba TSOP toshiba Nand flash bga SRAM 512*8 NAND FLASH BGA 256kx8 sram 128kx16 toshiba nand Toshiba America Electronics toshiba nand flash 4Mb
Text: Toshiba America Electronics Search SRAM - Low Power Asynchronous Press Releases | Select One DRAM Components DRAM Components Archive DRAM Modules DRAM Modules (Archive) Flash - NOR Flash - NAND 5V Flash - NAND 3.3V Flash - SmartMedia Multi-Chip Package SRAM - Low Power
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TC551001C,
128Kx8
TC551001CI,
TC554001A-V
TC554001AI
ismatch/20000921/09112000/TOSH/09112000/1
TC55V200
TC55V2001
TC55V2001I
256kx8 sram 5v
toshiba TSOP
toshiba Nand flash bga
SRAM 512*8
NAND FLASH BGA
256kx8 sram
128kx16
toshiba nand
Toshiba America Electronics
toshiba nand flash 4Mb
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Untitled
Abstract: No abstract text available
Text: THNIDxxxxBx Series Rev1.7 NAND Flash Drive - THNIDxxxxBx Series -Outline The THNIDxxxxBx NAND Flash Drive series from Toshiba features an IDE interface, a flash disk controller chip, and NAND-type flash memory devices. There are two form factors, 2.5 inch-type and 3.5 inch-type, available in the
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THNID064MBBI
Abstract: No abstract text available
Text: THNIDxxxxBx Series Rev1.6 NAND Flash Drive - THNIDxxxxBx Series -Outline The THNIDxxxxBx NAND Flash Drive series from Toshiba features an IDE interface, a flash disk controller chip, and NAND-type flash memory devices. There are two form factors, 2.5 inch-type and 3.5 inch-type, available in the
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Micron NAND
Abstract: No abstract text available
Text: Advance‡ 2.5-Inch NAND Flash SSD Features RealSSD 2.5-Inch SATA NAND Flash Solid State Drive SSD MTFDBAC008SAA, MTFDBAC016SAA, MTFDBAC032SAA, MTFDBAC064SAA Features Figure 1: RealSSD Solid State Drives • Micron NAND Flash • RoHS-compliant “green” package
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MTFDBAC008SAA,
MTFDBAC016SAA,
MTFDBAC032SAA,
MTFDBAC064SAA
800GB
09005aef82cb3bdc/
09005aef82cb3c5e
Micron NAND
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nand flash 16gb
Abstract: 64GB Nand flash SLC memory EIA-720 Micron SSD micron nand flash chip 64gb
Text: Advance‡ 2.5-Inch NAND Flash SSD Features RealSSD 2.5-Inch SATA NAND Flash Solid State Drive SSD MTFDAAC008SAA, MTFDAAC016SAA, MTFDAAC032SAA, MTFDAAC064SAA Features Figure 1: RealSSD™ Solid State Drive • Micron NAND Flash • RoHS-compliant “green” package
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MTFDAAC008SAA,
MTFDAAC016SAA,
MTFDAAC032SAA,
MTFDAAC064SAA
400GB
09005aef82cb3bdc
09005aef82cb3c5e
nand flash 16gb
64GB Nand flash SLC memory
EIA-720
Micron SSD
micron nand flash chip 64gb
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Untitled
Abstract: No abstract text available
Text: P400e 2.5-Inch NAND Flash SSD Features P400e 2.5-Inch SATA NAND Flash SSD MTFDDAK050MAR, MTFDDAK100MAR, MTFDDAK200MAR, MTFDDAK400MAR Features • • • • • • • • • • • • • • Micron 25nm MLC NAND Flash RoHS-compliant package SATA 6 Gb/s interface
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P400e
MTFDDAK050MAR,
MTFDDAK100MAR,
MTFDDAK200MAR,
MTFDDAK400MAR
512-byte
32-command
09005aef8476b180
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sata ssd controller
Abstract: No abstract text available
Text: P400e 2.5-Inch NAND Flash SSD Features P400e 2.5-Inch SATA NAND Flash SSD MTFDDAK050MAR, MTFDDAK100MAR, MTFDDAK200MAR, MTFDDAK400MAR Features • • • • • • • • • • • • • • Micron 25nm MLC NAND Flash RoHS-compliant package SATA 6 Gb/s interface
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P400e
MTFDDAK050MAR,
MTFDDAK100MAR,
MTFDDAK200MAR,
MTFDDAK400MAR
512-byte
32-command
64KB/128KB
09005aef8476b180
sata ssd controller
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K8D3216UBC-pi07
Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM
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BR-05-ALL-002
K8D3216UBC-pi07
K5E5658HCM
KAD070J00M
KBH10PD00M
K5D1257ACM-D090000
samsung ddr2 ram MTBF
KBB05A500A
K801716UBC
k5d1g13acm
k5a3281ctm
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nand flash controller
Abstract: NAND FLASH Controller Toshiba "ECC" SSOP28 NAND SAMSUNG SPEC Nand flash spec samsung
Text: eKF5250 USB full speed NAND flash controller Preliminary SPECIFICATION 1. General Description The eKF5250 provides a high-performance interface to bridge USB and NAND Flash compliance device which can be used to implement of flash memory storage device with USB
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eKF5250
eKF5250
1005B,
nand flash controller
NAND FLASH Controller Toshiba "ECC"
SSOP28
NAND SAMSUNG SPEC
Nand flash spec samsung
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km29v040t
Abstract: yd 4145 km29v040 V040T
Text: KM29V040T Flash ELECTRONICS 512Kx8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Power Supply The KM29V040T is a 512Kx8bit NAND Flash memory. • Organization - Memory Cell Array Its NAND cell structure provides the most cost-effective
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KM29V040T
512Kx8
500us
400mil/0
KM29V040T
512Kx8bit
KM29V040
yd 4145
V040T
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Untitled
Abstract: No abstract text available
Text: KM29N040T Flash ELECTRONICS 512Kx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Power Supply The KM29N040T is a 512Kx8bit NAND Flash memory. Its NAND cell structure provides the most cost-effective solution for Digital Audio Recoding. A program
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KM29N040T
512Kx8Bit
KM29N040T
32-byte
500us
120ns/byte.
KM29N040
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Untitled
Abstract: No abstract text available
Text: KM29V040T ELECTRONICS Flash 512Kx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Power Supply The KM29V040T is a 512Kx8bit NAND Flash memory. Its NAND cell structure provides the most cost-effective solution for Digital Audio Recoding. A program
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KM29V040T
512Kx8Bit
KM29V040T
32-byte
500us
120ns/byte.
KM29V040
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KM29N040T
Abstract: 741 IC data sheet bhrb data sheet IC 741 KM29N04 samsung flash bad block mapping
Text: KM29N040T ELECTRONICS Flash 512Kx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Power Supply The KM29N040T is a 512Kx8bit NAND Flash memory. • Organization - Memory Cell Array - Data Register Its NAND cell structure provides the most cost-effective
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KM29N040T
512Kx8
500us
400mil/0
KM29N040T
512Kx8bit
KM29N040
KM29N040T)
7TL4142
741 IC data sheet
bhrb
data sheet IC 741
KM29N04
samsung flash bad block mapping
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Untitled
Abstract: No abstract text available
Text: ^EDI EDI784MSV-RP ELECTRONIC DESIGNS. INC 4Megx8 Ruggedized Plastic NAND Flash 4Mx8 Bit NAND Flash CMOS, Monolithic Features The EDI784MSV is a 4M 4,194,304 x8 bit Ruggedized Plastic NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high
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EDI784MSV-RP
EDI784MSV50SI
EDI784MSV-RP
ECOU8274
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Untitled
Abstract: No abstract text available
Text: ^EDI EDI788MS V 8Megx8 NAND Flash ELECTRONIC DESIGNS, INC ADVANCED 8Mx8 Bit NAND Flash CMOS, Monolithic {Features The EDI788MSV is a 8M 8,388,608 x8 bit NAND Flash • Single 3.3 - Volt Supply cell provides the most cost-effective solution for high density
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EDI788MS
EDI788MSV
528-byte
250ns
24/32Pin
7/96ECO
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Untitled
Abstract: No abstract text available
Text: ^EDI EDI784MSV-RP ELECTRONIC DESIGNS. INC 4Megx8 Ruggedized Plastic NAND Flash 4Mx8 Bit NAND Flash CMOS, Monolithic F eatu res The EDI784MSV is a 4M 4,194,304 x8 bit Ruggedized Plastic NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high
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EDI784MSV-RP
EDI784MSV
528-byte
I784M
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Untitled
Abstract: No abstract text available
Text: ^EDL EDI788MS V 8Megx8 NAND Flash ELECTRONIC DESIGNS, INC ADVANCED 8Mx8 Bit NAND Flash CMOS, Monolithic Features The EDI788MSV is a 8M 8,388,608 x8 bit NAND Flash • Single 3.3 - Volt Supply cell provides the most cost-effective solution for high density
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EDI788MS
24/32Pin
EDI788MSV
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Untitled
Abstract: No abstract text available
Text: m i EDI784MSV-RP 4Megx8 Ruggedized Plastic NAND Flash ELECT R O N IC DESlÊN S. IN C 4Mx8 Bit NAND Flash CMOS, Monolithic Features The EDI784MSV is a 4M 4,194,304)x8 bit Ruggedized Plastic NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high
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EDI784MSV-RP
250ms
minV50SI
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J200M
Abstract: No abstract text available
Text: ^EDI ED I784M SV ELECIRONCDE9GIS&NC 4Megx8NAND Flash PRELIMINARY 4Mx8 Bit NAND Flash CMOS, Monolithic Features The EDI784MSV is a 4M 4,194,304 x8 bit NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high density
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I784M
EDI784MSV
EDI784MSV50BB
EDI784MSV50FB
EDf784MSV50BB
EDI784MSV50BC
EDI784MSV50BI
050TYP.
EDI784MSV
J200M
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Untitled
Abstract: No abstract text available
Text: FLASH MEMORY KM29N16000TS/RS 2M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization The KM29N16000TS/RS is a 2M 2,097,152 x8 bit NAND Flash memory with spare 64K(65,536)x8 bit. Its NAND - Memory Cell Array : (2M +64K) x 8 bit
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KM29N16000TS/RS
KM29N16000TS/RS
264-byte
KM29N16000
Figure14
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY KM29V16000ATS/RS FLASH MEMORY 2M X 8 Bit NAND Flash Memory GENERAL DESCRIPTION FEATURES • Single 3.3 - volt Supply • Organization - Memory Cell Array : 2M +64K bit x 8bit - Data Register The KM29V16000ATS/RS is a 2M(2,097,152)x8 bit NAND Flash memory with a spare 64K(65.536)x8 bit. Its NAND
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KM29V16000ATS/RS
250us
KM29V16000A
Figure15
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3171S
Abstract: No abstract text available
Text: KM29V16000ARS Flash ELECTRONICS 2 M x 8 B i t NAND Flash Memory GENERAL DESCRIPTION FEATURES The KM29V16000ATS/RS is a 2M 2,097,152 x8 bit NAND • Single 3.3 - volt Supply • Organization - Memory Cell Array : (2M +64K)bit - Data Register Flash memory with a spare 64K(65,536)x8 bit. Its NAND
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KM29V16000ARS
KM29V16000ATS/RS
264-byte
250fjs
003172R
-TSOP2-400F
-TSOP2-400R
3171S
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9CTI
Abstract: S28B 9CTI 10 pin ic EC017 ED1784MS EDJ7
Text: EDI784MS V m 4Megx8NAND Flash f lE C T R O M C O CSG N & N C . PRELIMINARY 4Mx8 B it NAND Flash CMOS, Monolithic Features The EDI784MSV is a 4M 4,194,304 x8 bit NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high density
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ED1784MS
250ns
EDI784MSV
EDI784MSV50BB
EDI784MSV50FB
EDI784MSV50B8
EDI784MSV506C
24/32Pin
300MN
3530im
9CTI
S28B
9CTI 10 pin ic
EC017
EDJ7
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