NB021EY Search Results

NB021EY Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
NB021EYNB212ZI		Unknown	Cross Reference Datasheet		Scan	PDF

NB021EY Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2SA987 Abstract: 2N1026A LOW-POWER SILICON PNP Text: LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 NB321F NB321X NB321Y 2N2105 2N2105 2N2105 2N1026A 2N1469 2N940 V410A 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 NB221EH NB221FH NB221XH NB221YH NB021ET NB021FT NB023ET NB023FT 2SA987 NB021FI	Original	PDF	NB321F NB321X NB321Y 2N2105 2N1026A 2N1469 2N940 V410A 2SA987 LOW-POWER SILICON PNP
NA51W Abstract: NA52W NB313Y NA52W pnp 35604 NB311 NB312 NB313 NB321 NB322 Text: NB311,312,313 NPN , NB321,3 2 2 ,323(PNP) NATL SEUICOND {DISCRETE} 6501130 NATL ifl EMICOND, (DISCRETE) 28C National Semiconductor r - 35601 n - 2 , } 3 ^ 0 - 7 NB311, 312, 313 (NPN) * , NB321, 3 2 2,3 N P ) 1,5ArnP com plem entary pow er drivers 2 ,3 23(P	OCR Scan	PDF	bSD113D NB311, NB321, andTO-202 b5D113D NB313Y" NB022EY NR001E NB113EY NA51W NA52W NB313Y NA52W pnp 35604 NB311 NB312 NB313 NB321 NB322
NB111 Abstract: NB121 NB211E LB 122 NPN U6501 NB212E Text: NATL SEMICOND {DISCRETE} 2fl 650 1130 NATL SEMICOND, Q. z cl CO CM j>i\|b S D113 □ QOaSSTa DISCRETE 28C National Semiconductor T - z 35 5 9 3 ? - Z - / T- • CM CM CM rCÛ z r* Z CL z NB121,122,123(PNP) 100mA 9eneral purpose transistors (TI package and lead coding	OCR Scan	PDF	bS0113G NB121 100mA 400mV to-92 fcj501130 NB021EV NB211YY NR001E NB111 NB211E LB 122 NPN U6501 NB212E
40khz ultrasonic transmitter Abstract: 40KHZ ULTRASONIC NA01 nb111eh NR001E NB021EY toko k Text: Sö NATL SEHICOND {DISCRETE} NA01 NPN , NA02(PNP) 6 5 0 1 1 3 0 NA TL S E M I C O N D , DE I t.SD113G DG3SSS3 (D I S C R E T E ) _28C 35553 D National Semiconductor NA02(PNP) 80 mA complementary power transistors [~1~\| package and lead coding features • 20 Volt/800 mA Amp rating	OCR Scan	PDF	SD113G Volt/800 NB111EH/J NA01EG/J NR001E 380mW NR001E 40khz ultrasonic transmitter 40KHZ ULTRASONIC NA01 nb111eh NB021EY toko k
40khz ultrasonic transmitter Abstract: 40KHZ ULTRASONIC NB111 NB111EH "Ultrasonic" "transmitter" 40khz ultrasonic transmitter 12V k 3555 NA01EX NR001E NB021EY Text: 20 NATL SEHICOND {DISCRETE} 6501130 NATL SEMICOND, STr z a z a DISCRETE _28C 35553 NA02(PNP) 80 mA complementary power transistors [T~\| package and lead coding features • 20 Volt/800 mA Amp rating ■ Low V qe (sat) and V qe (sat) characteristics at §	OCR Scan	PDF	SD113G 800mA Volt/800 NB111EH/J NA01EG/J NR001E NA01EG/J 380mW 40khz ultrasonic transmitter 40KHZ ULTRASONIC NB111 NB111EH "Ultrasonic" "transmitter" 40khz ultrasonic transmitter 12V k 3555 NA01EX NB021EY
NA51 transistor Abstract: na52 transistor BV 726 C 1 Converter NA52W pnp NA52W BV 726 C Converter na51 npn BV 726 C na52 power transistor na51 Text: NATL SEMICOND {DISCRETE} 6501130 NATL CL Z CL CÎ ~2ö SEMICOND, DE I tS0113Q 0035573 T 28C DISCRETE CT1 National ÉSA Semiconductor 35573 - f - 3 in < z r\ Z Q. 10 < NA51 (NPN) 3.5Am p complementary pow er transistors NA52(PNP) features PH packages and lead coding	OCR Scan	PDF	tS0113Q O-126 O-220 T0-220 35S7b NB021EY NB122EY NB112EY NB312E NA51 transistor na52 transistor BV 726 C 1 Converter NA52W pnp NA52W BV 726 C Converter na51 npn BV 726 C na52 power transistor na51
NA42 transistor Abstract: NA42U NA41 16AL 35570 NA42 pnp 557 Text: äfl NA41 NPN , NA42(PNP) SENICOND {DISCRETE} D E ^ b S D 1 1 3 D Doassti N A T L S E M I C O N D , (D I S C R E T E ) 3 28C National Semiconductor NA41(NPN) NA42(PNP) 2 .5 Amp com plem entary p o w e r tra n s is to rs fl~\| packages and lead coding features	OCR Scan	PDF	O-126 O-220 O-220 tS0113D T-32-P NB021EY NB211YY NR001E NA41U NA42 transistor NA42U NA41 16AL 35570 NA42 pnp 557
NB111 Abstract: npn general purpose amplifier E28C nb121 Text: ~ 2ä NATL SEHICOND {DISCRETE} 650 1130 a. Z a CO CM NATL S E M IC O N D , D E \|b s a ii3 Q a a B ssT a 28C 35593 D IS C R E T E National Semiconductor T- r> CM CM NB121,122,123(PNP) 100mA general purpose transistors CM features rCÛ z V» z CL z (TI package and lead coding	OCR Scan	PDF	NB121 100mA 400mV tS0113Q NB021EY NB211YY NR001E NA41U NA42U NB111 npn general purpose amplifier E28C
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	PDF	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
NA51 transistor Abstract: NA51W power transistor na51 na52 transistor NA52W NA52W pnp na51 NA52U na52 na51 npn Text: NATL SEMICOND {DISCRETE} 6501130 CL Z CL NATL ~2ö SEMICOND, DE I tS0113Q 0035573 T 28C DISCRETE CT1 National ÉSA Semiconductor 35573 - f - 3 C Î in < z r\ Z Q. 10 < NA51 (NPN) NA52(PNP) 3 .5 A m p com plem entary p o w e r tra n s is to rs features [T I packages and lead coding	OCR Scan	PDF	tSD113D O-126 T0-220 O-126 Q03SS7b 10iiF 33-If NB021EY NB122EY NR001E NA51 transistor NA51W power transistor na51 na52 transistor NA52W NA52W pnp na51 NA52U na52 na51 npn
transistor pnp a111 Abstract: NA41U TO-126 ON 150 watt hf transistor 12 volt PJO 390 CM NA42 NA42U NB021EY NB211YY NR001E Text: NA41 NPN , NA42(PNP) Na j U^STMICOND {DISCRETE} ^ 5JIL13JL N A T L äfl SEMI C O N D (DISCRETE) National Semiconductor NA41(NPN) NA42(PNP) Dlf\| bSD1130 DOaSSbT 7 28C 2 .5 Amp com plem entary p o w e r tra n s is to rs fl~\| packages and lead coding features	OCR Scan	PDF	bSD113D O-126 O-220 O-126 O-220 hSD113D NB021EY NB211YY NR001E NA41U transistor pnp a111 NA41U TO-126 ON 150 watt hf transistor 12 volt PJO 390 CM NA42 NA42U NB021EY NB211YY NR001E